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2.
制作压力传感器时,在二氧化硅层上淀积多晶硅膜,既可利用优良的机械特性,又可保证压敏电阻与衬底间具有良好的绝缘性,由此可大大提高器件的温度特性。介绍了一种多晶硅压力传感器的原理和设计。实验结果表明,这类传感器具有灵敏度好,精度高等特点,电路工作范围为0-250℃,且具有良好的温度稳定性。 相似文献
3.
Y.H. Sun 《Materials Research Bulletin》2004,39(9):1247-1255
Effects of Ca and Zr substitution upon the dielectric properties of Ba5LaTi3Ta7O30 ceramics were investigated together with the structural characterization. All the samples of Ba5La(ZrxTi1−x)3Ta7O30 formed a filled tungsten-bronze structures, whereas the solid solution limit was determined as x=0.25 in (CaxBa1−x)5LaTi3Ta7O30. Beyond this limit secondary phase of CaTa2O6 was detected and it would become the major phase for the Ca-rich compositions. The temperature coefficient of dielectric constant was improved with increasing Zr content while the dielectric constant decreased and the low dielectric loss varied little (in the order of 10−4). In the case of (CaxBa1−x)5LaTi3Ta7O30, small temperature coefficient of dielectric constant could be obtained with increasing Ca content while the dielectric constant decreased significantly, and a small amount substitution of Ca for Ba induced decrease in dielectric loss. 相似文献
4.
BBN (BaBi2Nb2O9) is very interesting and promising lead free material with relaxor properties in capacitors, sensors and actuators. 相似文献
5.
电源对介质阻挡放电(DBD)激发准分子(XeCl*)辐射的影响 总被引:3,自引:2,他引:1
本文对电源参数如电压幅值、频率及正负电压对介质阻挡放电激发准分子XeCl 紫外 (30 8nm)辐射的影响进行了实验研究。结果表明 ,UV辐射随电压幅度的增加而增强 ,但效率下降 ;提高频率 ,增加了放电次数 ,导致UV辐射的增强 ;此外 ,在较高的频率下 ,电压上升沿变陡 ,使得电子获得的能量主要用于原子的激发和电离。正、负电压放电的不对称源于电极结构的不对称而引起的放电过程的差异 ,负电压内电极可向放电管中馈入更多的能量 ;比较发光光谱可判断生成准分子的等离子体化学过程没有明显的差别 相似文献
6.
La doping effects on intergrowth Bi2WO6–Bi3TiNbO9 ferroelectric ceramics were studied by X-ray diffraction, electron probe microanalysis and dielectric spectroscopy. It was found that the La3+ distribution, ferroelectric phase transition and dielectric relaxation behavior are apparently affected by La doping. With increasing La3+ content, the site of dopant ion varies, the grain growth of Bi5TiNbWO15 is restrained, the Curie temperature is reduced and broadened. Furthermore, two dielectric relaxation loss peaks were observed both in temperature and frequency spectra. The calculated relaxation parameters revealed the oxygen vacancy related to the relaxation process. 相似文献
7.
In this paper we report the evolution of the polar cluster like behavior with the incorporation of Ti4+ ion in BaZrO3 Ceramics. Dielectric behavior of BaZrxTi(1−x)O3 (x = 1.00, 0.95, 0.90, 0.85) ceramics is studied in the temperature range from 300 to 30 K. Polar cluster like behavior becomes more prominent with the increase in content of Ti4+ ion. The dielectric relaxation is analyzed by Vogel–Fulcher relation and Arrhenius law. Frequency dependence of dielectric constant and low loss tangent of these materials can be useful for the potential applications at low temperature. 相似文献
8.
Dielectric relaxation measurements are reported over a frequency range from 10−1 to 109 Hz as a function of exposure time for an epoxy resin-carbon fibre composite, ageing at 60 °C in water. Investigation of the nature of the dipole relaxation of the water molecules, indicates the nature of their interaction with the polymer matrix. Analysis of the dielectric relaxation spectra allow identification of processes that can be attributed to ‘free’ and ‘bonded’ water, water in micro-cracking, located in carbon fibre disbonds and plasticizing the polymer matrix. Identification of the various types of location in which water exists was aided by use of the Ng factor from the Kirkwood-Frölich equation, which describes the constraints on free dipole ration nature imposed by the environment in which it is located. These data indicate the power of the dielectric technique for quantitative analysis of water ingress into epoxy composites. 相似文献
9.
Oxide films formed by water oxidation at 360°C on ZrNb(1%)O(0.13%) for several durations (50-300 days) were studied by impedance spectroscopy (IS) in gaseous atmosphere. The electrical behavior of oxide layers was investigated as a function of the temperature (25-300°C) at constant oxygen partial pressure (0.3 Pa). Cole-Cole diagrams suggest a frequency-temperature equivalence. A simple electrical model has been derived from the as-deduced 14 decade master curve. Equivalent circuit includes a series association of two layers exhibiting different dielectric properties: a dense layer near the oxide-metal interface and a porous layer at the waterside. Electronic conductivity is predominant within the whole temperature range, but ionic contribution was proposed to increase for temperature higher than 170°C. During the parabolic oxidation step, the oxide thickness of the barrier layer increases but oxide growth would not be only a geometrical one. The kinetic modification to a constant oxidation rate was observed to be correlated to the increase of the dense layer thickness. Such a behavior suggests that the mechanism controlling oxidation rate is not a pure mechanism of oxygen diffusion through this layer. Finally, a qualitative model of activated electrons transport based on an hopping mechanism was proposed in order to take into account that the Arrhenius diagrams of both total conductivity and dispersion factor are characterized by a break point with two activation energy values. 相似文献
10.
Solid solutions of the GdFeO3–GdInO3 system were prepared at 1550 °C by ceramic powder processing. The formulated composition was Gd(Fe1−xInx)O3 (GFI) with the indium contents at x = 0, 0.25, 0.5, 0.75, and 1.0. A stable phase of Gd(Fe1/3In2/3)O3 in our system was identified by X-ray diffraction and phase composition analysis. Multi-phase morphologies were observed for GFI bulks with x = 0.5 and 0.75. Dielectric and electrical properties of the GFI bulks were investigated. The addition of 25% In3+ in GdFeO3 had an obvious enhancement in polarization and led to an elevated resonance frequency. Dielectric properties of GFI bulks except GdInO3 were strongly dependent upon the test frequency, which corresponded to the response of polarization mechanism. GdInO3 displayed as a stable dielectric, which was frequency- and temperature-insensitive. GdInO3 was thermally activated and became leaky until above 600 °C. 相似文献