Assessing students' conceptual understanding using an online three‐tier diagnostic test

When solving a mathematical problem, students who do not have sufficient conceptual understanding may perform poorly and exhibit misconceptions. This study was aimed to examine students' conceptual understanding and significant misconceptions when solving number sense‐related problems. An online three‐tier diagnostic test was administered to 125 fifth‐grade students with varied socio‐economic backgrounds in Hong Kong. Only 14.40% of the students exhibited high performance with high confidence, indicating that these students had a profound conceptual understanding of number sense. In addition, the majority of the students (66.40%) did not demonstrate number sense; these students exhibited several significant misconceptions and could solve the questions only by using a rule‐based method or guessing. Accordingly, most students performed unsatisfactorily on number sense‐related problems. This study is imperative in identifying early predictors and provides information for further compatible interventions in the teaching and learning of number sense in Hong Kong in particular and worldwide in general.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Formation of Chlorotriophenoxy Radicals from Complete Series Reactions of Chlorotriophenols with H and OH Radicals

The chlorothiophenoxy radicals (CTPRs) are key intermediate species in the formation of polychlorinated dibenzothiophenes/thianthrenes (PCDT/TAs). In this work, the formation of CTPRs from the complete series reactions of 19 chlorothiophenol (CTP) congeners with H and OH radicals were investigated theoretically by using the density functional theory (DFT) method. The profiles of the potential energy surface were constructed at the MPWB1K/6-311+G(3df,2p)//MPWB1K/6-31+G(d,p) level. The rate constants were evaluated by the canonical variational transition-state (CVT) theory with the small curvature tunneling (SCT) contribution at 600–1200 K. The present study indicates that the structural parameters, thermal data, and rate constants as well as the formation potential of CTPRs from CTPs are strongly dominated by the chlorine substitution at the ortho-position of CTPs. Comparison with the study of formation of chlorophenoxy radicals (CPRs) from chlorophenols (CPs) clearly shows that the thiophenoxyl-hydrogen abstraction from CTPs by H is more efficient than the phenoxyl-hydrogen abstraction from CPs by H, whereas the thiophenoxyl-hydrogen abstraction from CTPs by OH is less impactful than the phenoxyl-hydrogen abstraction from CPs by OH. Reactions of CTPs with H can occur more readily than that of CTPs with OH, which is opposite to the reactivity comparison of CPs with H and OH.     

Experimental research on dynamic response of PZT-5H under impact load

In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge.     

Unsteady free convection of second‐grade nanofluid with a new time‐space fractional heat conduction

The Caputo and Caputo–Fabrizio derivative are applied to study a second‐grade nanofluid over a vertical plate. A comparative analysis is presented to study the unsteady free convection of a second‐grade nanofluid with a new time–space fractional heat conduction. The governing equations with mixed time–space fractional derivatives are non‐dimensionalized and solved numerically, and a comparison between the Caputo and the Caputo–Fabrizio models is made. It is found that the temperature is higher for the Caputo–Fabrizio fractional model than the Caputo model, but the higher velocity only exists near the vertical plate for the Caputo–Fabrizio model than the Caputo model. Moreover, the velocity for the Caputo model will exceed the Caputo–Fabrizio model as y evolves.     

利用HFC网络开展VoIP业务

本文首先介绍了VoIP的原理、相关协议．然后介绍了VoIP业务在HFC网络应用的业务环境和体系结构。并对其中的功能实体进行描述和说明。最后介绍一个具体的业务实例。     

基于SAA7114H的视频图象采集系统的设计

介绍一种高度集成并具有广泛通用性的视频图象信号采集系统。系统的开发采用了功能强大的视频解码芯片SAA7114H和可编程逻辑门阵列器件(FPGA)，并考虑了在线编程的模式。文中给出了YUV色彩空间与RGB色彩空间的转换公式，经验证效果很好。在实际应用中，该系统作为前端图象采集部分取得了良好的效果。     

层序单元体系域划分及勘探意义

体系域是层序地层学理论体系中的重要概念，在隐蔽油气藏的勘探中，勘探家们极为重视低位体系域。但体系域的成因意义、是否有不同级别层序的体系域以及如何划分，在实际工作中认识不一致。结合勃海湾盆地的勘探实例，分析体系域的成因机制、组合特征和勘探规律，认为：体系域是基准面变化等因素作用的产物，不同级别的层序都发育着与其对应的体系域：一般情况下，三级层序对应的体系域单元与含油气层的规模相匹配，但四级层序对应的体系域才是隐蔽油气藏赋存的有利部位。图5参6。     

X80焊管H_2S环境应力腐蚀开裂行为研究

采用三点弯曲加载法和微电极扫描测试技术,研究了X80高强度级管线钢及其焊缝区的抗H2S环境应力腐蚀开裂(SSCC)行为。测定了焊接接头的显微硬度分布,分析了显微组织结构、力学性能及抗腐蚀性能之间的相关性。研究表明,热影响区(HAZ)对应力腐蚀开裂最为敏感,母材的纵向和横向取样对应力腐蚀敏感性影响不显著,薄壁管材比厚壁管材有较好的抗H2S环境应力腐蚀性能。HAZ晶粒粗大、硬度高,局部腐蚀倾向大,由此导致该区SSCC敏感性高。