亲子乐园空调送风方式的数值模拟研究

大型综合室内亲子乐园属于高大空间,设有游乐设施和游戏的特殊性使得对空间的舒适性要求一致,但是送风气流遇阻严重,室内存在较多气流死角,影响室内空气质量和儿童健康。因此其空调设计不仅需要考虑温度、风速的空间均匀度,还要考虑各点的空气龄和PMV-PPD指标。以天津某亲子乐园为研究对象,利用scSTREAM软件对适用于该房间的辐射供冷加新风、置换通风、混合通风三种空调方式的送风效果进行数值模拟分析,从流场的均匀性、人员的热舒适性等方面对模拟结果进行探讨,研究结果表明辐射供冷加新风方式的空间均匀性和PMV指标最佳,混合通风方式的空气龄最小。     

Design and experimental investigation of the high efficiency 1.5 W/4.2 K pneumatic-drive G-M cryocooler

The development of a high cooling power and high efficiency 4.2 K two stage G-M cryocooler is critically important given its broad applications in low temperature superconductors, MRI, infrared detector and cryogenic electronics. A high efficiency 1.5 W/4.2 K pneumatic-drive G-M cryocooler has recently been designed and developed by ARS. The effect of expansion volume rate and operation conditions on the cooling performance has been experimentally investigated. A typical cooling performance of 1.5 W/4.2 K has been achieved, and the minimum temperature of the second stage is 2.46 K. The steady input power of the compressor at 60 Hz is 6.8 kW, while the operation speed of the rotary valve is 30 rpm. A maximum cooling power of 1.75 W/4.2 K has been obtained in test runs.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

田赛距离测量中全站仪的设计与实现

本文提出了将智能全站仪这种精密测量仪器广泛应用于田赛项目测量中，并结合其他科技元素用于解决田赛项目中跳远、投掷等项目的测量及数据管理问题，实现实时、自动、准确地裁定和报告比赛成绩。     

Effect of strain rate on the dynamic compressive mechanical behaviors of rock material subjected to high temperatures

Strain rate is not only an important measure to characterize the deformation property, but also an important parameter to analyze the dynamic mechanical properties of rock materials. In this paper, by using the SHPB test system improved with high temperature device, the dynamic compressive tests of sandstone at seven temperatures in the range of room temperature to 1000 °C and five impact velocities in the range of 11.0–15.0 m/s were conducted. Investigations were carried out on the influences of strain rate on dynamic compressive mechanical behaviors of sandstone. The results of the study indicate that the enhancement effects of strain rates on dynamic compressive strength, peak strain, energy absorption ratio of sandstone under high temperatures still exist. However, the increase ratios of dynamic compressive strength, peak strain, and energy absorption ratio of rock under high temperature compared to room temperature have no obvious strain rate effects. The temperatures at which the strain rates affect dynamic compressive strength and peak strain most, are 800, and 1000 °C, respectively. The temperatures at which the strain rates affect dynamic compressive strength and peak strain weakest, are 1000 °C, and room temperature, respectively. At 200 and 800 °C, the strain rate effect on energy absorption ratio are most significant, while at 1000 °C, it is weakest. There are no obvious strain rate effects on elastic modulus and increase ratio of elastic modulus under high temperatures. According to test results, the relationship formula of strain rate with high temperature and impact load was derived by internalizing fitting parameters. Compared with the strain rate effect at room temperature condition, essential differences have occurred in the strain rate effect of rock material under the influence of high temperature.     

Effects of apparent image velocity and complexity on the dynamic visual field using a high-speed train driving simulator

Train driving is a highly visual task. The visual capabilities of the train driver affects driving safety and driving performance. Understanding the effects of train speed and background image complexity on the visual behavior of the high-speed train driver is essential for optimizing performance and safety. This study investigated the role of the apparent image velocity and complexity on the dynamic visual field of drivers. Participants in a repeated-measures experiment drove a train at nine different speeds in a state-of-the-art high-speed train simulator. Eye movement analysis indicated that the effect of image velocity on the dynamic visual field of high-speed train driver was significant while image complexity had no effect on it. The fixation range was increasingly concentrated on the middle of the track as the speed increased, meanwhile there was a logarithmic decline in fixation range for areas surrounding the track. The extent of the visual search field decreased gradually, both vertically and horizontally, as the speed of train increased, and the rate of decrease was more rapid in the vertical direction. A model is proposed that predicts the extent of this tunnel vision phenomenon as a function of the train speed.Relevance to industryThis finding can be used as a basis for the design of high-speed railway system and as a foundation for improving the operational procedures of high-speed train driver for safety.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Enhance cycling performance of LiMn2O4 cathode by Sr2+ and Cr3+ doping

Spinel LiSr_0·1Cr_0·1Mn_1·8O₄ was synthesised by high temperature solid state method in order to enhance the electrochemical performance. The LiSr_0·1Cr_0·1Mn_1·8O₄ (LSCMO) materials were characterised by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical tests. The XRD and SEM studies confirm that LSCMO had spinel crystal structure with a space group of Fd3m, and the particle of LSCMO shows irregular shape. The cyclic voltammetry data illustrated that the heavy current charge–discharge performance of LMO was improved by Sr²⁺ and Cr³⁺ doping. The galvanostatic charge–discharge of LSCMO cathode materials was measured at 1, 5, 10 and 20 C. The results indicated that LSCMO improved the capacity retention.     

Crystal-field engineering of ultrabroadband mid-infrared emission in Co2+-doped nano-chalcogenide glass composites

Tunable and ultrabroadband mid-infrared (MIR) emissions in the range of 2.5–4.5 μm are firstly reported from Co²⁺-doped nano-chalcogenide (ChG) glass composites. The composites embedded with a variety of binary (ZnS, CdS, ZnSe) and ternary (ZnCdS, ZnSSe) ChG nanocrystals (NCs) can be readily obtained by a simple one-step thermal annealing method. They are highly transparent in the near- and mid-infrared wavelength region. Low-cost and commercially available Er³⁺-doped fiber lasers can be used as the excitation source. By crystal-field engineering of the embedded NCs through cation- or anion-substitution, the emission properties of Co²⁺ including its emission peak wavelength and bandwidth can be tailored in a broad spectral range. The phenomena can be accounted for by crystal-field theory. Such nano-ChG composites, perfectly filling the 3–4 μm spectral gap between the oscillations of Cr²⁺ and Fe²⁺ doped IIVI ChG crystals, may find important MIR photonic applications (e.g., gas sensing), or can be used directly as an efficient pump source for Fe²⁺: IIVI crystals which are suffering from lack of pump sources.