Passivation effects of deuterium exposure on boron-doped CVD homoepitaxial diamond

The deuterium (hydrogen) passivation effect on acceptors in boron-doped CVD homoepitaxial diamond was studied by electrical (Hall-effect) and secondary ion mass spectroscopy (SIMS) measurements. Deuterium was incorporated into the samples using microwave (MW) deuterium plasma at 673 K for 2–24 h. We observed the progress of acceptor passivation with p-type conduction, which finally resulted in a highly resistive state.     

The effect of CO2 on the high-rate homoepitaxial growth of CVD single crystal diamonds

In this paper, we report the effect of gaseous carbon dioxide (CO₂) introduced in the typical reaction atmosphere of CH₄/H₂/N₂ (60/500/1.8 in sccm) on the growth rate, morphology and optical properties of homoepitaxy single crystal diamonds (SCDs) by microwave plasma chemical vapor deposition. The additional carbonaceous sources supplied by CO₂ are favorable to increase the growth rate, and meanwhile, the oxygen related species generated would enhance the etching effect not only to eliminate the non-diamond phase of SCD but also to decrease the growth rate. The appropriate addition of CO₂ can increase the high growth rate, decrease the surface roughness, and reduce the concentration of N-incorporation. It is demonstrated that adding CO₂ strongly affects the contents of various reaction species in plasma, which would determine the growth features of CVD SCDs.     

Homoepitaxial and Characterization of GaSb Thin Films by Molecular Beam Epitaxy

Abstract

Molecular Beam Epitaxy (MBE) was used to grow GaSb thin films on GaSb substrates. We have obtained the optimized growth condition to improve films quality and the surface morphology of GaSb epilayer during growth. Two group samples were tested to study the influence of the growth rate and the V/III flux ratios on the crystal quality. It caused fewer defects when the growth rate of approximately was fixed 0.6?ML/s. And the surface morphology and performance was best for GaSb epilayer when the beam ratio was 5. The thin films were characterized by Atomic Force Microscopy (AFM) and high-resolution X-Ray Diffraction (XRD). The root means square roughness of the superlattice surface was only 0.335?nm. The full width at half maximum of the rocking curve was 39.6?arcsec and the emission wavelength of photoluminescence was 1.99?μm.     

Molecular orientation induced by high-speed substrate transfer during vacuum vapor deposition of organic films

The authors investigate a relationship between substrate transfer speeds during vacuum vapor deposition and orientation characteristics of organic molecules. Results show that rod-shaped molecules of alpha-sexithiophene (α-6T) are oriented in a substrate transfer direction and an absorption dichroic ratio of 1.44 is obtained from the oriented α-6T molecule film when a high substrate transfer speed of 4 m s⁻¹ is used. By combining the substrate transfer technique with homoepitaxial growth of α-6T molecules on a rubbed surface, the absorption dichroic ratio further increases to 4.29. Polarized electroluminescence (EL) characteristics are investigated using rod-shaped molecules of 4,4′-bis[4-(di-p-tolylamino)styryl]biphenyl (DPAVBi) as a light-emitting hole-transport layer. An EL dichroic ratio of 2.12 is obtained due to an orientation of DPAVBi molecules caused by combining two techniques.     

Deep level defects in unintentionally doped 4H-SiC homoepitaxial layer

Unintentionally doped 4H-SiC homoepitaxial layers grown by hot-wall chemical vapor deposition (HWCVD) have been studied using photoluminescence (PL) technique in the temperature range of 10 to 240 K. A broadband green luminescence has been observed. Vacancies of carbon (Vc) are revealed by electron spin resonance (ESR) technique at 110 K. The results strongly suggest that the green band luminescence, as shallow donor-deep accepter emission, is attributed to the vacancies of C and the extended defects. The broadband green luminescence spectrum can be fitted by the two Gauss-type spectra using nonlinear optimization technique. It shows that the broad-band green luminescence originates from the combination of two independent radiative transitions. The centers of two energy levels are located 2.378 and 2.130 eV below the conduction band, respectively, and the ends of two energy levels are expanded and superimposed each other.     

4°偏角4H-SiC单晶快速外延生长工艺研究

高质量快速SiC外延生长工艺技术是目前高压电力电子器件研制的关键工艺技术。采用HCl气体作为含Cl化合物,研究了不同温度、气相y(C)/y(Si)摩尔比和刻蚀工艺等对于SiC外延层质量的影响。通过优化外延工艺参数,采用原位HCl刻蚀工艺,获得了SiC单晶外延生长速率达32μm/h的快速外延生长工艺,外延层表面平滑,表面粗糙度仅0.218 nm,晶片外延层厚度不均匀性小于0.4%。     

In situ STM study of homoepitaxial electrodeposition on Au(1 0 0)

We have studied by in situ scanning tunneling microscopy the homoepitaxial electrodeposition on reconstructed and partially reconstructed Au(1 0 0) surfaces from chloride-containing solutions. Layer-by-layer, but strongly anisotropic, growth is observed on a completely reconstructed surface. On a partially reconstructed surface nucleation occurs on the unreconstructed areas, but the new islands formed tend to be pinned, growing anisotropically along the borders between reconstructed and unreconstructed areas.     

Electrical properties of B-doped homoepitaxial diamond (001) film

Relationship between growth condition and quality of homoepitaxially grown B-doped diamond (001) film has been studied using physical measurements of defect density as a function of doping concentration. In particular, electrical properties of the homoepitaxial diamond film were characterized using measurements of conductivity, carrier concentration and mobility. The highest mobility is found to be about 1000 cm²V⁻¹s⁻¹ at 293 K, indicating that the quality of the CVD diamond film is further improved through optimizing the growth condition. The density of the compensation donor was determined from the temperature-dependent hole concentration. The lowest donor density is found to be 8.4 × 10¹⁵ cm⁻³ in the present work. This is an order of magnitude greater than the lowest value measured in natural IIb diamond. Furthermore, it is also found that the donor density increases with increasing doping concentration during the growth. On the other hand, the mobility decreases rapidly with increasing doping concentration. From these results, we speculate that the compensation donor is an origin of an additional scattering center in diamond, and excessive B-doping makes the quality of the CVD diamond worse.     

Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm/V s at 300 K for ion-implanted diamond

The homoepitaxial single crystal diamond growth by microwave plasma assisted CVD at high microwave power density 200 W/cm³ in a 2.45 GHz MPACVD reactor using natural diamond seeds (type IIa) was investigated. The semiconductor CVD diamond of p-type was obtained by doping technique of ion implantation. Boron ions were implanted at the acceleration energy of 80 keV with two cases of dose: 5 · 10¹⁴ and 3 · 10¹⁵ cm^− 2. To recover the damage layer and activate dopants in CVD diamond the rapid annealing at nitrogen atmosphere at 1380° C was used. B-implanted diamond layer showing the mobility of 1150 cm²/V s at 300 K which is the highest for ion-implanted diamond was obtained.     

Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers

The electrical properties of Schottky contacts on the (100) surface of Boron doped diamond films epitaxially grown on Ib substrates are investigated in this work. The role of Boron doping concentration and extended defects detected by cathodoluminescence is correlated to current voltage characteristics, rectifying efficiency and high voltage performance of the diodes up to 1 kV and more. The influence of surface treatment prior to metal deposition is highlighted and the choice of metal for the Schottky contact is discussed. The paramount importance of using an oxidised diamond surface at the Schottky contacts and outside is demonstrated. Decreasing the series resistance of diodes is obtained with a stack of two layers, the upper one being lightly doped while the deeper one contains Boron concentrations close to the metallic conductivity threshold (4 × 10²⁰ B/cm³). Several architectures are studied. The ohmic contact directly laid on the heavily doped layer permits forward current densities of 66 A/cm² under 4 V at room temperature and switching times in the nanosecond range. This set of results shows that p-type diamond is an adequate semiconductor for implementing high speed, high power and high voltage electronic rectifiers.