Optical and electrical properties of ITO film on flexible fluorphlogopite substrate

Indium Tin Oxide (ITO) films were prepared, at room temperature, on a fluorphlogopite substrate using magnetron sputtering technology. At various temperatures of 500 °C, 600 °C, 700 °C, 800 °C, and 900 °C, the samples were (had) annealed for 2 h (a 2-h duration). The results showed improvement in the crystalline performance of ITO film at selected annealing temperatures, with a significant reduction in resistivity at 800 °C. The lowest resistivity is 4.08 × 10^?4 Ω-cm, which is nearly an order of magnitude lower than the unannealed sample. All samples have an average light transmittance above 85% in the visible light range (400–800 nm), and with increasing annealing temperature, the average light transmittance tends to decrease. Besides, at the sensitive wavelength of 550 nm, the light transmittance is as high as 93.74%. The sheet resistance testing of the sample was through the number of bending times, which revealed that with the increase of the number of bending, the sheet resistance increases. However, after 1200 bending times, the change rate of the sheet resistance remains below 5%. Thus, the ITO film prepared on the flexible fluorphlogopite substrate revealed excellent optical and electrical properties, good flexibility, and improved stability after high-temperature annealing, which guarantees successful application in flexible electronic devices.     

Fabrication of a poly-Si thin-film transistor with storage capacitor

The fabrication process of a low-temperature poly-Si thin-film transistor (TFT) with a storage capacitor was studied. The atmospheric-pressure chemical-vapour deposited SiO₂ protected the buried indium tin oxide (ITO) from reduction by a pure H₂ plasma treatment that was essential for the effective improvement of the poly-Si TFT characteristics. Thus, a storage capacitor with an ITO (picture electrode)-SiO₂-ITO (buried common electrode) structure was successfully fabricated. The poly-Si TFT with a channel width/length W/L ratio of 5 drove a 3 pF storage capacitor in 2 μs, and it showed superior driverability for LCD use. The TFT also had good hold characteristics under illumination for the realization of grey-scale representation.     

中频反应溅射SiO2膜与直流溅射ITO膜的在线联镀

多数ITO透明导电玻璃生产线在实现SiO2膜与ITO膜在线联镀时，应用SiO2靶射频溅射沉积SiO2膜工艺和ITO靶直流溅射沉积ITO膜工艺，如果SiO2膜应用硅靶反应磁控溅射工艺，存在这种工艺是否可以与ITO靶直流溅射沉积ITO膜工艺在线联用以及如何实现联用的问题。作者对现有的生产线进行了改造设计、加工，做了大量实验、质谱分析和多项测试研究，成功地实现反应溅射SiO2膜与ITO膜在线联镀，做到SiO2镀膜室的工作状态的变化基本上不影响ITO镀膜室的工艺条件。     

Investigation of structural properties of ITO thin films deposited on different substrates

The influence of the substrate nature on the structure and morphology of ITO thin films grown by thermal evaporation in vacuum is investigated. The as-prepared metal films with Sn/In molar ratio of 0.1 were subsequently annealed for 2 h at 723 K in air (to obtain tin doped indium oxide), then annealed in vacuum at 523 K, followed by UV irradiation (to reduce the electrical resistivity). Irrespective of substrate nature, XRD data evidence a (222) preferential orientation in films. Substrate nature, annealing in vacuum and UV irradiation influence the structure, morphology, optical, electrical and surface wetting properties of the films' surface.     

Surface structure of silver thin films on In2O3:Sn and Al2O 3 †

Surface structure of thin silver films (200 Å) on two technologically important films, indium tin oxide (ITO) and aluminium oxide, has been studied using scanning tunneling microscope. ITO films were prepared by reactive electron beam evaporation. Aluminium oxide films were prepared by oxidizing 2000 Å thick aluminium films evaporated on to H₂ terminated single crystal silicon substrates. The surface structure of silver on ITO and aluminium oxide appeared to be same and was characteristic of Stranski-Krastanov type. The observed asymmetry in the island shape was attributed to the anisotropic nature of the strain fields surrounding the nucleation centres.     

Development of nano indium tin oxide (ITO) grains by alkaline hydrolysis of In(III) and Sn(IV) salts

Indium tin oxide (ITO) nano powders of different compositions (In: Sn = 90: 10, 70: 30 and 50: 50) were prepared by heat treatment (300-450°C) of mixed hydroxides of In(III) and Sn(IV). The hydroxides were obtained by the reaction of aq. NH₃ with mixed aq. solutions of In(NO₃)₃ and SnCl₄. FTIR and TG/DTA studies revealed that powders existed as In(OH)₃H₂O—SnO₃H₂H₂O in the solid state and then they transformed to In₂O₃—SnO₂ via some metastable intermediates after 300°C. Cubic phase of In₂O₃ was identified by XRD for the oxides up to 30% of Sn. Particle size measurements of the solid dispersed in acetone and SEM study for microstructure showed that the oxides were in the nano range (55-75 nm) whereas the size range determined from Debye-Scherrer equation were 11–24 nm.     

铟锡氧化物靶材的应用及管状靶材的爆炸成形

铟在自然界是稀散金属，其氧化物具有许多优异的性能，合理利用铟资源的重要途径之一是生产铟锡氧化物（ＩＴＯ）靶材，介绍了ＩＴＯ靶材的应用领域，分析了平面ＩＴＯ靶材与管状ＩＴＯ靶材的特点，提出了ＩＴＯ管状靶材的爆炸成形技术，与现有成形技术相比，爆炸成形工艺特别适用于管状靶材成形，对制粉的要求将降低，不丧失粉末的优良性质，通过爆炸成形工艺的分析可知，适当控制状飞片厚度，飞行距离，爆速，炸药厚度并与粉末材料     

热处理对制备纳米氧化铟锡(ITO)粉末的影响

以共沸蒸馏工艺辅助的共沉淀法制备了纳米氧化铟-氧化锡（ITO）粉体，研究了不同热处理温度对制备粉体的影响，结果表明，随着热处理温度的提高，粉体发生从四方结构向体心立方结构转变，晶粒出现长大现象，比表面积变化明显，化学组分保持高纯状态，综合比较，在700～800℃进行热处理可以得到尺寸均匀，晶形完整的纳米级粉体。     

磁控溅射制备In2O3-SnO2薄膜与分析

选择In2LO3与SnO2质量比11的靶材为溅射源,采用磁控溅射法沉积了ITO薄膜,讨论了溅射氩气压强、氧流量、基体温度对薄膜透射率和方阻的影响,深入分析了其机理.研究结果表明溅射时采用低Ar压强更有利于降低ITO薄膜的电阻率,并确定最佳氩气压强为0.2 Pa,厚度为120 nm的ITO薄膜在可见光区的透过率可达到90%;氧流量能明显改变薄膜的性能,随着氧流量从0增加10 L/min(标准状态下,下同),载流子浓度(N)则由3.2×1020降低到1.2×1019/cm3,N值的变化与ITO薄膜光学禁带宽度(Eg)的变化密切相关.振子模型与实验结果吻合,并确定了ITO薄膜的等离子波长(λp=1 510 nm).薄膜随方阻减小表现出明显的"B-M"效应.通过线性外推,建立了直接跃迁的(αE)2模型,并确定了薄膜的Eg值(3.5～3.86 eV).     

爆炸压实烧结ITO陶瓷靶材的实验研究

通过爆炸压实烧结纳米ITO粉末制备了ITO陶瓷靶材，结果表明爆炸冲击压实在靶材的后续烧结密实过程中起到了促进作用，它与常规的加压烧结相比，具有操作简单，设备要求低等很多优点。经过爆炸压实的烧结靶材具有细小的晶体颗粒，比商业靶材的晶粒度小约1个数量级。