Effect of electric charge accumulation on low energy ion implantation in insulators

Charge accumulation at the surface of insulators during low energy ion implantation is related to two processes: ion impinging on the sample and secondary electron emission. Samples composed of a piece of Si (having the size of the ion beam) fixed on the centre of polyethylene (PE) coupons have been implanted with 2.2 keV H₂ ions to a fluence of 2 × 10¹⁶ H/cm². ERD (Elastic Recoil Detection) depth profiles of the implanted ions are shallower with an increase of the PE coupon size. The relative critical Si/PE size to repel all the incident ions is around 1.1 × 1.1 cm²/2.5 × 2.5 cm². The potential of the secondary electron suppressor has been varied from −500 V to +500 V. It changes the secondary electron distribution around the implanted area and, consequently, affects the accumulation of charges at the sample surface. When the potential is 0 V, a uniform ion implantation with little effect of charge accumulation for all sizes of PE coupons is obtained. A two-dimension model has been performed and gives a good explanation for the mechanism of the electric charge neutralisation.     

Effect of CoFe2O4 mole percentage on multiferroic and magnetoelectric properties of Na0.5Bi0.5TiO3/CoFe2O4 particulate composites

Na_0.5Bi_0.5TiO₃ (NBT), CoFe₂O₄ (CFO) as well as particulate composites containing different mole percentages of NBT and CFO were synthesized by the solid-state sintering route and characterized for their ferroelectric and ferrimagnetic hysteresis loops, magnetostriction and magnetoelectric (ME) output. The mole% of CFO was found to influence the ferroelectric and ferrimagnetic hysteresis loops as well as magnetostriction and piezomagnetic coefficients which in turn had a significant effect on the magnetoelectric voltage coefficient. The highest magnetoelectric voltage coefficient (α) of 0.5 mV/cm/Oe was recorded in (65) NBT–(35) CFO composite.     

Basic properties of the F-type centers in halides, oxides and perovskites

We present a short survey of the optical properties of primary radiation-induced point defects in alkali halides, simple oxides and some ABO₃ perovskites. We discuss in details the optical properties of single electron F and F⁺ centers in rock-salt (f.c.c.) alkali halides and oxides and show that the Mollwo-Ivey law well-known for the F-type centers in alkali halides may be extended for other rock-salt structure insulators. We also discuss the major differences in point defect production mechanisms in halides and oxides. We show that the Rabin-Klick diagram may be generalized for a whole family of alkali halides. The F-type center migration and aggregation into metal colloids in alkali halides and oxides is also discussed.     

Ion bombardment induced surface electrical degradation monitoring by means of luminescence in aluminas

Oxide ceramics for use as electrical insulators in future fusion devices, will be exposed to ionization and displacement damage (neutrons, gammas, ion bombardment). Enhanced oxygen loss due to ion bombardment increases surface electrical conductivity, and at the same time the surface emits light due to ion beam induced luminescence (IBIL). Results for 3 types of α-alumina and sapphire measuring electrical surface conductivity and IBIL as a function of dose at different temperatures between 20 and 200 °C, show a clear correlation between luminescence and surface electrical degradation. This indicates the potential to remotely monitor insulating material degradation not only in ITER and beyond, but also in the more immediate in-reactor experiments required for materials testing. Partial reduction of degradation by heating in air suggests the possibility for in situ recovery of the insulating properties.     

Fabrication and characterization of polyterpenol as an insulating layer and incorporated organic field effect transistor

A non-synthetic polymer material, polyterpenol, was fabricated using a dry polymerization process namely RF plasma polymerization from an environmentally friendly monomer and its surface, optical and electrical properties investigated. Polyterpenol films were found to be transparent over the visible wavelength range, with a smooth surface with an average roughness of less than 0.4 nm and hardness of 0.4 GPa. The dielectric constant of 3.4 for polyterpenol was higher than that of the conventional polymer materials used in the organic electronic devices. The non-synthetic polymer material was then implemented as a surface modification of the gate insulator in field effect transistor (OFET) and the properties of the device were examined. In comparison to the similar device without the polymer insulating layer, the polyterpenol based OFET device showed significant improvements. The addition of the polyterpenol interlayer in the OFET shifted the threshold voltage significantly; + 20 V to −3 V. The presence of trapped charge was not observed in the polyterpenol interlayer. This assisted in the improvement of effective mobility from 0.012 to 0.021 cm²/Vs. The switching property of the polyterpenol based OFET was also improved; 10⁷ compared to 10⁴. The results showed that the non-synthetic polyterpenol polymer film is a promising candidate of insulators in electronic devices.     

Stability of metal nanocomposites under heavy-ion bombardment of insulators

Optical transmission and ion-induced photon emission of SiO₂ (silica glass), LiNbO₃ and Al₂O₃ were measured during implantation of 60-keV Cu⁻ or Au⁻ ions. Conditions of stability of metal nanocomposites were determined and represented with the help of nonequilibrium phase diagrams. Formation of structures dynamically stable under ion bombardment diminished the efficiency of ion implantation for further accumulation of implants as in nanoparticles. Contributions from various radiation-induced processes (sputtering, radiation-induced diffusion, atomic collisions, electronic excitations, etc.) to formation of nanocomposites were evaluated.     

Dielectric properties and current–voltage nonlinear behavior of Ca1−xSrxCu3Ti4O12 ceramics

The effects of Sr doping on the dielectric properties and current–voltage nonlinear behavior of CCTO were investigated. By combining the observations of dielectric properties, current–voltage nonlinearity and impedance spectroscopy, we have found that Sr doping has influenced the electrical properties by adjusting the impedance characteristics of the grain and grain boundary. Among the Sr-CCTO specimens in this work, as Sr doping concentration is 10%, the specimen (Sr-CCTO-2) has the highest permittivity and lowest nonlinear coefficient.     

±660kV直流复合绝缘子的研制

介绍了±660 kV直流复合绝缘子硅橡胶配方优化设计、均压环优化设计,原材料选用与处理以及其它新技术和新装备的应用情况。对复合绝缘子的伞裙进行优化设计后,不仅改善了其直流污闪特性,明显提高了单位绝缘距离的污闪电压,而且能够在减少积污、提高耐湿闪能力方面起到积极的作用;加装所设计的均压环后,能有效的抑制起晕场强,满足不起晕的要求;采用优化的硅橡胶配方显著提高了硅橡胶伞裙护套的工艺性能、耐漏电起痕性能和憎水性;改进HTV密封设计和选用芯棒新材料能够为产品长期安全运行提供可靠保证;试验结果表明,研制的±660 kV直流棒形悬式复合绝缘子系列产品能够满足±660 kV直流输电线路的使用要求。     

Confinement-Induced Phonon Softening and Hardening in Sb2Te3 Thin Films

Scaling effects in Sesqui-chalcogenides are of major interest to understand and optimize their performance in heavily scaled applications, including topological insulators and phase-change devices. A combined experimental and theoretical study is presented for molecular beam epitaxy-grown films of antimony-telluride  (Sb₂Te₃). Structural,vibrational, optical, and bonding properties upon varying confinement are studied for thicknesses ranging from 1.3 to 56 nm. In ultrathin films, the low-frequency coherent phonons of A_1g¹ symmetry are softened compared to the bulk (64.5 cm⁻¹ at 1.3 nm compared to 68 cm⁻¹ at 55.8 nm). A concomitant increase of the high-frequency A_1g² Raman mode is seen. X-ray diffraction analyses unravel an accompanying out of plane stretch by 5%, mainly stemming from an increase in the Te-Te gap. This conclusion is supported by density functional theory slab models, which reveal a significant dependency of chemical bonding on film thickness. Changes in atomic arrangement, vibrational frequencies, and bonding extend over a thickness range much larger than observed for other material classes. The finding of these unexpectedly pronounced thickness-dependent effects in quasi-2D material Sb₂Te₃ allows tuning of the film properties with thickness. The results are discussed in the context of a novel bond-type, characterized by a competition between electron localization and delocalization.