In-situ TEM observation of structural changes in nano-crystalline CoCrCuFeNi multicomponent high-entropy alloy (HEA) under fast electron irradiation by high voltage electron microscopy (HVEM)

The structural changes induced in a CoCrCuFeNi multicomponent nano-crystalline high-entropy alloy (HEA) under fast electron irradiation were investigated by in-situ transmission electron microscopy (TEM) using a high voltage electron microscope (HVEM). A fine-grained face centered cubic (fcc) single phase was obtained in the sputtered specimens. The fcc solid solution showed high phase stability against irradiation over a wide temperature range from 298 to 773 K, and remained as the main constituent phase even when the samples were irradiated up to 40 displacement per atom (dpa). Moreover, the irradiation did not seem to induce grain coarsening. This is the first report on the irradiation damage in 5-component HEA under MeV electron irradiation.     

荷能束辐照致使Cu/Ag表面偏析的研究

本文研究了金属(Cu)/金属(Ag衬底)系统的荷能束辐照引起的表面偏析现象。观察到Cu在多晶Ag衬底上溅射淀积过程中,Ag原子在Cu膜表面的偏析,且淀积Cu原子能量越大,Ag原子偏析程度越大,即观察到了淀积Cu原子10~(-1)～1eV量级的平均能量差异对膜层表面偏析行为的影响。对溅射淀积所得膜层进行keV量级的离子束辐照,Ag原子的表面偏析程度更甚。     

辐照技术在聚丙烯材料制备和改性中的应用

利用辐照的手段,来制备功能化的聚丙烯材料,在获得新功能的同时,不改变聚丙烯原有的优点,并综述了辐照技术在聚丙烯材料制备和改性中的研究及应用情况     

辐射技术在食品加工中的应用

综述了食品辐射加工的原理及其作用效果，以及该技术在欧美的应用现状及存在的发展障碍。     

Ion irradiation—induced structure damage to botanic samples using the ion transmission energy spectrum

1 INTRODUCTIONThe new aPplications of low energy heavy ion beam in irradi4ted botanical materialswere studied in recellt yeaxs. The beaminduced mutation effect on crop seeds has causedthe attention of physicist and biologists.[1l:] FOr examPle, 1ow energy ions can induceremarkable mutation to rice seeds.[3] There are many special phenomena when heavyions bombard botanic sW1e due to its special structure. Some studies showed that tllepenetration depths of some ions were far larger than t…     

Magnetic force microscopy studies on the magnetic ordering in organic materials induced by high-energy proton irradiation

In this study, ferromagnetic microstructures in highly oriented pyrolytic graphite and superparamagnetic spots in polyimide foils were created by 2.25 MeV proton microbeam irradiation and characterized using atomic and magnetic force microscopy. For this purpose, graphite samples were irradiated with cross-like patterns of 15 μm × 15 μm size using ion fluences in the range of (0.003–2.5) × 10¹⁸ cm⁻². The irradiated crosses showed strong magnetic signals and a complex domain structure in the magnetic images depending on the geometrical dimensions of the crosses. Furthermore, polyimide foils were irradiated with microspots and fluences in the range of (0.016–3.1) × 10¹⁹ cm⁻². Magnetic force microscopy shows very strong phase shifts in these irradiated areas.     

^60Coγ射线对刚地弓形虫缓殖子感染性的影响

应用不同剂量的~(60)Coγ射线照射含NT株弓形虫包囊的鼠脑匀浆后,以0.4％胰蛋白酶液消化,使弓形虫缓殖子从包囊中释放出来,并用生理盐水作连续10倍稀释,使成为含不同数量缓殖子的悬液,将此悬液接种小鼠,用生物检测方法确定其感染性。另设未经照射处理的缓殖子悬液感染小鼠的对照组。结果表明,γ射线0.55kGy剂量为控制鼠脑中NT株弓形虫感染性的最小有效剂量。γ射线0.1kGy剂量对弓形虫缓殖子感染性无明显影响,而0.45kGy照射后,其感染性较前者下降了10~4倍。     

Irradiation Defects in Silicon Crystal

The application of irradiation in silicon crystal is introduced.The defects caused by irradiation are reviewed and some major ways of studying defects in irradiated silicon are summarized.Furthermore the problems in the investigation of irradiated silicon are discussed as well as its properties.     

Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage

The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was used to suppress leakage of the silicon power diodes subjected to local lifetime control. The aim was to modify the profile of recombination centers and to reduce production of vacancy complexes. The high-energy proton irradiation was compared with standard local lifetime killing by high-energy alphas. Recombination centers arising from irradiation were characterized after irradiation and subsequent annealing at 220 and 350 °C by deep level transient spectroscopy and I-V profiling. Static and dynamic parameters of irradiated diodes were also measured and compared. Results show that the applied irradiation with protons provides 3-10 times lower leakage compared to standard alphas for equivalent reduction of the reverse recovery current maximum. On the other hand, the excessive formation of hydrogen donors at high proton fluences and their diffusion during annealing at 350° decreases diode blocking capability.     

The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayers

A fundamental research of structural defects induced upon post-growth processing of ZnSe/GaAs epilayers grown on (100) GaAs was done by identifying defect-related reflections in the transmission electron diffraction (TED) patterns of ZnSe. Structural artifacts, other than the as-grown defects, on this material system could be excluded according to our results. Four types of abnormal reflections have been observed in addition to primary reflections. These extra reflections are sensitive to the post-growth processing of ZnSe epilayers and may arise from various external effects, rather than epitaxy growth, such as irradiation damage, surface oxidation, and surface contamination. By mapping these reflections at several major zone axes using TED patterns, we found that the reciprocal lattice for a ZnSe crystal with structural defects consists of two distinct types of extra reflections associated with irradiation damage. The first type of extra reflections is ±1/3{111} and the other is ±1/2{111} corresponding to pure-edge and non-edge dislocation loops, respectively. For (100) oriented wafers, the ±1/3{111} and ±1/2{111} reflections were observed only on two of the four possible 〈111〉 variants (i.e. [111]_Zn and [111]_Zn)and this phenomenon was attributed to the anisotropy of defect distribution. Extra reflections associated with surface oxidation and contamination are also observed. The orientation relationships between a surface hexagonal ZnO and a cubic ZnSe film are [0001]_ZnO//[−111]_ZnSe, and [01−11]_ZnO//[011]_ZnSe. The origin, characterization, and elimination of these induced reflections are discussed. With the knowledge about these extra effects on structural defect formation, we have shown the real microstructure of ZnSe epilayers.