Estimation of gradient size of interfacial strain and its optimization for effective magnetoelectric coupling in (CoFe2O4) – (0.93Na0.5Bi0.5TiO3 – 0.07BaTiO3), 2-2 nano-composites

Strain-mediated coupling between the magnetic and electrically ordered phases plays a significant role in magnetoelectric (ME) nano-composites. This study explores a method to analyse and quantify interfacial strain using a grazing angle scan (α) in a ME composite optimised for a specific microstructure. The details of strain around the interface CoFe₂O₄ (CFO) – 0.93Na_0.5Bi_0.5TiO₃ – 0.07BaTiO₃ (NBT-BT) was determined by performing ‘α’ scan, in order to gather information at various depths of the NBT-BT layer around maximum intensity (110) reflection. The strain around the interface was observed to dominate over a spatial region of ～20–30 nm away from the interface. The Piezoresponse force microscopy (PFM) studies performed near the interface reveal that the strain constrain experienced by the ferroelectric layer operates such that polarisation rotation and domain wall motion are constrained compared to the strain relaxed region of the film. For effective strain transfer, heterostructures grown with optimised thicknesses (～20–30 nm) exhibited a superior inverse piezomagnetic effect.     

Structural,optical, and electrical properties of tin iodide-based vacancy-ordered-double perovskites synthesized via mechanochemical reaction

Over the recent past, lead-based halide perovskite materials have drawn significant attention due to their excellent optical and electrical properties for solar cells and optoelectronics applications. However, the toxicity of lead elements and instability under ambient conditions leads to develop alternative compositions. Herein, we report a novel mechanochemical synthesis of tin iodide-based double perovskites (A₂SnI₆; A = Rb⁺, Cs⁺, methylammonium, and formamidinium), and their structural, optical, and electrical properties are investigated. Importantly, we found that the hydrogen iodide (HI) addition during the ball-milling process minimizes secondary phase formation in the synthesized A₂SnI₆ powders. The effects of HI addition and the A-site substitution are investigated with respect to the lattice parameters, optical bandgaps, and electrical properties of the synthesized perovskite materials. Our results demonstrate essential information to improve the understanding of halide perovskite materials and develop efficient lead-free perovskite photoelectric devices.     

Quantitative investigation of electromechanical coupling of potassium sodium niobate-based thin films

High-performance environment-friendly piezoelectric potassium sodium niobate (KNN)-based thin films have been emerged as promising lead-free candidates, while their substrate-dependent piezoelectricity faces the lack of high-quality information due to restraints in measurements. Although piezoresponse force microscopy (PFM) is a potential measuring tool, still its regular mode is not considered as a reliable characterization method for quantification. After combining machine-learning enabled analysis using PFM datasets, it is possible to measure piezoelectric properties quantitatively. Here we utilized advanced PFM technology empowered by machine learning to measure and compare the piezoelectricity of KNN based thin films on different substrates. The results provide a better understanding of the relationship between structures and piezoelectric properties of the thin films.     

Dielectric, Ferroelectric and Piezoelectric Studies of PMN Modified PLZT Ceramics

Dielectric, ferroelectric and piezoelectric properties of xPb(Mg_1/3Nb_2/3)O₃-(1-x)(Pb_0.988 La_0.012)(Zr_0.535Ti_0.465)O₃ ceramic system synthesized through columbite precursor method are investigated. X-ray diffraction patterns of ceramics indicated pseudocubic phase formation with pyrochlore phase. Grain growth (4.47 μ m) and apparent density (7.68 gm/cm³) enhanced remarkably in 0.8PMN-0.2PLZT composition, respectively. Increasing PMN content remarkably increased both room temperature dielectric permittivity (ε_RT = 2316) and dielectric maximum (ε_Tc = 24747) in 0.6PMN-0.4PLZT composition, respectively. PMN substitution in PLZT system enhanced the ferroelectric remanent (P_r = 28.4 μ C/cm²) and spontaneous (P_s = 31.2 μ C/cm²) polarization while coercive field (E_c) continuously decreased in xPMN-(1-x)PLZT system. PMN modification in PLZT system influenced piezoelectric properties (d₃₃, k_p and k_t) throughout the PMN-PLZT system.     

Preparation of ultra-fine copper powder and its lead-free conductive thick film

In this paper, non-agglomerated monodispersed ultra-fine copper metallic powders have been synthesized with chemical reduction method. Fine lead-free glass powders were also prepared by solid synthesis process. Thick film paste prepared by above-mentioned copper metallic powders and lead-free glass powders was applied as conductive paste of MLCC. Mixture of glass and zinc oxide give the thick film a high adhesion strength which is attributed to the rough interface from interfacial reaction between glass and chip, and a good densification. Diffusion of metal between copper thick film and nickel thick film is clear. Ni-Cu solid solution appears under high temperature firing.     

我国印制电路板非ODS清洗技术现状引发的思考

我国印制电路板(PCB)的非ODS清洗技术已基本解决。当今需面对的是：(1)新型元器件的组装、(2)无铅焊工艺、(5)小产量生产的清洗技术，以及(4)优化方案的思考。     

Suppression of void coalescence in thermal aging of tin-silver-copper-X solder joints

Addressing the potential for drop impact failure of Pb-free interconnects, the shear ductility after extensive aging of Sn-Ag-Cu (SAC) solders has been improved radically by Co or Fe modifications. Several other SAC+X candidates (X=Mn, Ni, Ge, Ti, Si, Cr, and Zn) now have been tested. Solder joint microstructures and shear strength results show that new SAC+X alloys also suppress void formation and coalescence at the Cu (substrate)/Cu₃Sn interface (and embrittlement) after aging at 150°C for up to 1,000 h. Microprobe measurements of 1,000 h aged samples suggest that Cu substitution by X is usually accentuated in the intermetallic layers, consistent with X=Co and Fe results.     

Morphology of intermetallic compounds formed between lead-free Sn-Zn based solders and Cu substrates

The morphologies of intermetallic compounds formed between Sn-Zn based solders and Cu substrates were investigated in this study. The investigated solders were Sn-9Zn, Sn-8.55Zn-0.45Al, and Sn-8.55Zn-0.45Al-0.5Ag. The experimental results indicated that the Sn-9Zn solder formed Cu₅Zn₈ and CuZn₅ compounds on the Cu substrate, while the Al-containing solders formed the Al_4.2Cu_3.2Zn_0.7 compound. The addition of Ag to the Sn-8.55Zn-0.45Al solder resulted in the formation of the AgZn₃ compound at the interface between the Al_4.2Cu_3.2Zn_0.7 compound and the solder. Furthermore, it was found that the cooling rate of the specimen after soldering had an effect on the quantity of AgZn₃ compound formed at the interface. The AgZn₃ compound formed with an air-cooling condition exhibited a rougher surface and larger size than with a water-quenched condition. It was believed that the formation of the AgZn₃ compound at the interface occurs through heterogenous nucleation during solidification.     

Effect of Stress State on Growth of Interfacial Intermetallic Compounds Between Sn-Ag-Cu Solder and Cu Substrates Coated with Electroless Ni Immersion Au

Excessive intermetallic compound (IMC) growth in solder joints will significantly decrease the reliability of the joints. IMC growth is known to be influenced by numerous factors during the component fabrication process and in service. It is reported that, other than temperature and holding time, stress can also influence the IMC growth behavior. However, no existing method can be used to study the effect of stress state on IMC growth in a controlled manner. This paper presents a novel method to study the effect of stress on interfacial IMC growth between Sn-Ag-Cu solder and a Cu substrate coated with electroless Ni immersion Au (ENIG). A C-ring was used and in-plane bending induced tensile and compressive stresses were applied by tightening the C-ring. Results revealed that in-plane compressive stress led to faster IMC growth as compared with in-plane tensile stress.     

延长自组织InAs／GaAs量子点发光波长的研究进展

在近几年的InAs／GaAs自组织量子点的研究中，如何荻得1．3～1．55μm。长波长量子点材料是一个很热门的课题。本文综述了各种延长自组织InAs／GaAs量子点发光波长的方法，并提出了实用化的最佳途径。