Structural dependence of microwave dielectric properties of spinel structured Mg2(Ti1-xSnx)O4 solid solutions: Crystal structure refinement,Raman spectra study and complex chemical bond theory

Mg₂(Ti_1-xSn_x)O₄ (x?=?0–1) ceramics were prepared through conventional solid-state method. This paper focused on the dependence of microwave dielectric properties on crystal structural characteristics via crystal structure refinement, Raman spectra study and complex chemical bond theory. XRD spectrums delineated the phase information of a spinel structure, and structural characteristic of these compositions were achieved with the help of Rietveld refinements. Raman spectrums were used to depict the correlations between vibrational phonon modes and dielectric properties. The variation of permittivity is ascribed to the Mg₂(Ti_1-xSn_x)O₄ average bond covalency. The relationship among the B-site octahedral bond energy, tetrahedral bond energy and temperature coefficient are discussed by defining on the change rate of bond energy and the contribution rate of octahedral bond energy. The quality factor is affected by systematic total lattice energy, and the research of XPS patterns illustrated that oxygen vacancies can be effectively restrained in rich oxygen sintering process. Obviously, the microwave dielectric properties of Mg₂(Ti_1-xSn_x)O₄ compounds were obtained (${\epsilon }_r$= 12.18, $Q\times f$?=?170,130?GHz, ${\tau }_f$?=??53.1?ppm/°C, x?=?0.2).     

Optimised phase compositions and improved microwave dielectric properties based on calcium tin silicates

The Ca_(1+2y)Sn_(1-x)Si_(1+y)O_(5-2x+4y) low-permittivity microwave dielectric ceramics were prepared through solid-state reaction at 1350–1450 °C for 5 h. The relations between microwave dielectric properties and phase compositions for non-stoichiometric Ca_(1+2y)Sn_(1-x)Si_(1+y)O_(5-2x+4y) ceramics have been investigated. A single CaSnSiO₅ phase with abnormally positive temperature coefficient of resonant frequency (τ_f = + 62.5 ppm/°C) was synthesised at 1450 °C. This composition was an effective τ_f compensator of CaSiO₃ and Ca₃SnSi₂O₉ phases with typically negative τ_f value. The CaSiO₃ second phase was related to the Sn deficiency in the CaSn_(1-x)SiO_(5-2x) (0 < x < 1.0) composition, whereas the Ca₃SnSi₂O₉ second phase was obtained by controlling the Ca:Sn:Si ratios on the basis of the Ca_(1+2y)SnSi_(1+y)O_(5+4y) (0 < y < 1.0) composition. A promising low-permittivity millimetre-wave ceramic with most excellent microwave dielectric properties (ε_r = 10.2, Q×f = 81,000 GHz and τ_f = −4.8 ppm/°C) was produced from the Ca_(1+2y)SnSi_(1+y)O_(5+4y) (y = 0.4) ceramic.     

基于压电陶瓷动态信息的结构裂纹识别方法

利用压电陶瓷的动态特性和压电系统的动态信息,对铝梁的裂纹损伤进行了分析研究。随着梁裂纹尺寸的增加,压电陶瓷片的导钠幅值下降,且系统固有频率减小。利用导钠幅值的变化和系统的动态信息,可以对裂纹的位置和尺寸大小进行识别。实验证明该方法的有效性。     

Evaluation of the Properties of Si3N4/Si3N4 Joint Brazed Using a Filler Alloy Containing Pd

Si3N4 ceramic was jointed to itself using a filler alloy of Cu76.5Pd8.5Ti15, and the mechanical properties of the jointwere measured and analyzed. By using a filler alloy of Cu76.5Pd8.5Ti15, the SisN4/SisN4 joints were obtained bybrazing at 1373～1473 K f     

Ca掺杂钨镁酸铅陶瓷材料的制备及其介电性能

研究了Ca掺杂钨镁酸铅(PMW)陶瓷材料的合成、结构、烧结以及介电性能。结果发现：在Ca^2 摩尔分数小于15％时，能形成单相的PCMW钙铁矿相，结构由原来的斜方相向立方相转变。用二步合成法制备的样品容易致密烧结，气孔率比一步法制备的样品小。Ca的加入降低了材料的介电损耗，在频率为1MHz时，介质损耗达到了10^-4。当Ca^2 摩尔分数大于10％时，材料的Curie峰宽化显著，介电常数温度系数降低。     

提高自蔓延高温合成陶瓷内衬钢管性能的研究

在概括了自蔓延高温合成陶瓷内衬钢管的制备原理基础上，从降低陶瓷层孔隙率，减少陶瓷层裂纹和提高陶瓷层结合强度等方面，论述了提高自蔓延高温合成陶瓷内衬钢管性能的措施，对自蔓延高温合成陶瓷内衬钢管的应用现状及展望进行了评述。     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

Properties of nanoporous organosilicate hybrid thin films with a bimodal pore size distribution

Low dielectric poly[methylsilsesquioxane‐ran‐trifluoropropylsilsesquioxane‐ran‐(2,4,6,8‐tetramethyl‐2,4,6,8‐tetraethylenecyclotetrasiloxane)silsesquioxane]s {P[M‐ran‐TFP‐ran‐(TCS)]SSQs} having various compositions were synthesized using trifluoropropyl trimethoxysilane, methyl trimethoxysilane and 2,4,6,8‐tetramethyl‐2,4,6,8‐tetra(trimethoxysilylethyl)cyclotetrasiloxane. The chemical composition of the polymers and the content of SiOH end‐groups were controlled by adjusting the reaction conditions, and they were characterized by ¹H‐NMR. The thermally decomposable trifluoropropyl groups on the P[M‐ran‐TFP‐ran‐(TCS)]SSQ backbone and heptakis(2,3,6‐tri‐O‐methyl)‐β‐cyclodextrin (CD) were employed as pore generators. The dielectric constants of the porous CD/P[M‐ran‐TFP‐ran‐(TCS)]SSQ films were in the range 2.0–2.7 (at 100 kHz) depending on the concentration of the porogens, and showed no change over 4 days under aqueous conditions. The pore size of the films showed a bimodal distribution, with diameters of ca 0.5–1.0 nm for those originating from the trifluoropropyl groups and 1.7 nm from the CD. The elastic modulus and hardness of the 30 vol% CD‐blended film with a dielectric constant of 2.26 were 2.40 and 0.38 GPa, respectively, as determined by a nanoindenter. Copyright © 2005 Society of Chemical Industry     

Gasification of polyethylene using steam plasma generated by microwave discharge

Gasification of polyethylene (PE) pellet was studied using atmospheric argon-steam plasma generated by microwave discharge and the feasibility of the process was examined. The experimental results showed that additional steam to argon plasma promoted the weight decrease of PE and enhanced the production of H₂, CO, CO₂ and CH₄. The results confirmed that the treatment of plastics with the steam plasma was effective to obtain synthesis gas.     

Microwave-Assisted Graphite-Support Synthesis of Imidazolones

5(4H)-Oxazolones react with ammonium acetate under microwave irradiation and using graphite as support in an eco-friendly process. The reaction was carried out under solvent-free conditions and the imidazolones were obtained quantitatively. Moreover the reaction time was reduced too.