High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

Formation of Chlorotriophenoxy Radicals from Complete Series Reactions of Chlorotriophenols with H and OH Radicals

The chlorothiophenoxy radicals (CTPRs) are key intermediate species in the formation of polychlorinated dibenzothiophenes/thianthrenes (PCDT/TAs). In this work, the formation of CTPRs from the complete series reactions of 19 chlorothiophenol (CTP) congeners with H and OH radicals were investigated theoretically by using the density functional theory (DFT) method. The profiles of the potential energy surface were constructed at the MPWB1K/6-311+G(3df,2p)//MPWB1K/6-31+G(d,p) level. The rate constants were evaluated by the canonical variational transition-state (CVT) theory with the small curvature tunneling (SCT) contribution at 600–1200 K. The present study indicates that the structural parameters, thermal data, and rate constants as well as the formation potential of CTPRs from CTPs are strongly dominated by the chlorine substitution at the ortho-position of CTPs. Comparison with the study of formation of chlorophenoxy radicals (CPRs) from chlorophenols (CPs) clearly shows that the thiophenoxyl-hydrogen abstraction from CTPs by H is more efficient than the phenoxyl-hydrogen abstraction from CPs by H, whereas the thiophenoxyl-hydrogen abstraction from CTPs by OH is less impactful than the phenoxyl-hydrogen abstraction from CPs by OH. Reactions of CTPs with H can occur more readily than that of CTPs with OH, which is opposite to the reactivity comparison of CPs with H and OH.     

Experimental research on dynamic response of PZT-5H under impact load

In order to improve the stability of PZT-based sensors, the mechanical, dielectric, ferroelectric and piezoelectric properties of PZT-5H under impact load were studied experimentally by using the separated Hopkinson pressure bar (SHPB) with an electrical output measurement device. At the same time, the experimental study on the material properties of PZT-5H before and after the impact was carried out. The effect of impact cracks on the output voltage of PZT-5H was also analyzed. The results show that the dynamic piezoelectric constants of PZT-5H under low stress impact (10–50 MPa) are different from those under quasi-static state, and the empirical relationship between them and the peak stress is obtained through experiments. The dielectric properties of PZT-5H did not change under low stress impact, but micro-cracks occurred in the material and dielectric loss increased at high frequencies. Under short circuit, the residual polarization intensity of PZT-5H decreases sharply due to impact load. While the impact load causes the secondary polarization and the increase of the residual polarization intensity of PZT under open circuit. When the stress is over 45 MPa, the PZT-5H breaks. The formation of cracks causes abnormal discharge voltage and gap discharge.     

氯甲烷在镁修饰的ZSM-5分子筛催化剂上催化转化研究

在镁修饰的ZSM-5分子筛催化剂上,氯甲烷可以被催化转化为烃类产品。分别采用了离子交换和浸渍的方法来修饰ZSM-5分子筛。离子交换的Mg-ZSM-5催化剂和浸渍的Mg/ZSM-5催化剂都可以提高反应产物中的低碳烯烃的选择性,降低烷烃的选择性,并且保持较高的反应活性,但高的浸渍量对反应活性有一定的影响。NH3-TPD的结果表明,浸渍镁的ZSM-5催化剂的强酸中心数目明显减少。镁的修饰对催化剂酸性的影响导致了产物中低碳烯烃的增加。浸渍Mg的ZSM-5催化剂是潜在氯甲烷转化生成低碳烯烃的催化剂。     

利用HFC网络开展VoIP业务

本文首先介绍了VoIP的原理、相关协议．然后介绍了VoIP业务在HFC网络应用的业务环境和体系结构。并对其中的功能实体进行描述和说明。最后介绍一个具体的业务实例。     

基于SAA7114H的视频图象采集系统的设计

介绍一种高度集成并具有广泛通用性的视频图象信号采集系统。系统的开发采用了功能强大的视频解码芯片SAA7114H和可编程逻辑门阵列器件(FPGA)，并考虑了在线编程的模式。文中给出了YUV色彩空间与RGB色彩空间的转换公式，经验证效果很好。在实际应用中，该系统作为前端图象采集部分取得了良好的效果。     

换热器NH3泄漏的危害及防治措施

2005年8月,中国石油天然气股份有限公司辽阳石化分公司炼油厂第二循环水场水质出现异常情况.经调查分析,发现是脱硫装置E3410A换热器介质NH3泄漏后进入循环冷却水系统所致.介绍了NH3泄漏后的水质变化趋势及危害,并提出了防治措施.     

X80焊管H_2S环境应力腐蚀开裂行为研究

采用三点弯曲加载法和微电极扫描测试技术,研究了X80高强度级管线钢及其焊缝区的抗H2S环境应力腐蚀开裂(SSCC)行为。测定了焊接接头的显微硬度分布,分析了显微组织结构、力学性能及抗腐蚀性能之间的相关性。研究表明,热影响区(HAZ)对应力腐蚀开裂最为敏感,母材的纵向和横向取样对应力腐蚀敏感性影响不显著,薄壁管材比厚壁管材有较好的抗H2S环境应力腐蚀性能。HAZ晶粒粗大、硬度高,局部腐蚀倾向大,由此导致该区SSCC敏感性高。