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1.
2.
The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the
n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed
and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb
grown at 550°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized
surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized
impurity concentration increases proportionally with the sample’s donor concentration, suggesting that the ionized impurity
was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb
layers were studied by comparing their photoluminescence spectra at 4.5K. 相似文献
3.
The semiconductor thin disk laser is a new type of semiconductor laser. This work gives the basic operation function of the semiconductor disk laser, and analyses the heat effect by the experimentally measured photoluminescence spectrum of the laser chip at different pump power and different temperatures. We can see that: with increasing pump power, the thermal effect of the gain material becomes seriously and causes the saturation of carrier lifetime, so the electron-hole pair created in the absorbtion lay... 相似文献
4.
多孔硅发光机制的分析 总被引:4,自引:0,他引:4
从量子力学的基本理论出发讨论了量子限制效应,推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了PS光致发光的实验现象。 相似文献
5.
A. Kadashchuk A. Andreev H. Sitter N.S. Sariciftci Y. Skryshevski Y. Piryatinski I. Blonsky D. Meissner 《Advanced functional materials》2004,14(10):970-978
We report on photoluminescence (PL) and thermally stimulated luminescence (TSL) in highly ordered nanostructures of para‐sexiphenyl (PSP) grown by hot wall epitaxy (HWE). A low‐energy broad band is observed in the PL spectra that can be attributed to the emission from molecular aggregates. While the intrinsic exciton emission in steady‐state PL dominates at low temperatures, the emission from aggregates increases with elevating temperature and its magnitude depends sensitively on film preparation conditions. Time‐resolved PL measurements showed that the aggregate emission decays with a life‐time of ≈ 4 ns, which is approximately an order of magnitude larger than the lifetime of singlet excitons. TSL data suggests the presence of an energetically disordered distribution of localized states for charge carriers in PSP films, which results from an intrinsic disorder in this material. A low‐temperature TSL peak with the maximum at around 30 K evidences for a weak energy disorder in PSP films, and has been interpreted in terms of a hopping model of TSL in disordered organic materials. 相似文献
6.
7.
R. Niebuhr K. H. Bachem U. Kaufmann M. Maier C. Merz B. Santic P. Schlotter H. Jürgensen 《Journal of Electronic Materials》1997,26(10):1127-1130
Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N2O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried
ammonia using nitrogen (N2) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using
trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface.
Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N2O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations
in the range of 4×1016 cm−3 to 4×1018 cm−3 as measured by Hall effect. The observed carrier concentration increased with increasing N2O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B
exciton emission an exciton bound to a shallow donor. With increasing N2O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons.
These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius
and electronegativity arguments. 相似文献
8.
The mechanisms governing the solubilizing interactions between zwitterionic/anionic mixed surfactant systems at different
molar fractions of the zwitterionic surfactant (Xzwitter) and neutral or electrically charged unilamellar liposomes were investigated. The mixed systems were formed by N-dodecyl-N,N-dimethylbetaine
and sodium dodecyl sulfate in the presence of piperazine-1,4-bis-(2-ethanesulfonic acid) buffer at pH 7.20. Unilamellar liposomes formed by egg phosphatidylcholine, in some cases together
with stearylamine or phosphatidic acid, were used. Solubilization was detected as a decrease in static light-scattering of
liposomes. Two parameters were regarded as corresponding to the effective surfactant/lipid molar ratios (Re) at which the
surfactant system (i) saturated the liposomes, Resat, and (ii) led to a total solubilization of liposomes, Resol. From these parameters the bilayer/aqueous medium surfactant partition coefficients for the saturation (Ksat) and complete bilayer solubilization (Ksol) were determined. When Xzwitter was 0.40, The Re and K parameters showed a maximum, whereas the critical micellar concentration (CMC) of these systems exhibited
a minimum, regardless of the electrical charge of bilayers. Given that the ability of the surfactant systems to saturate or
solubilize liposomes is inversely related to the Resat and Resol parameters, these capacities appear to be directly correlated with the CMC of the mixed systems. The similarity of both Ksat and Ksol (particularly for Xzwitter=0.2–0.8) suggests that a similar partition equilibrium governs both the saturation and the complete solubilization of bilayers,
the free surfactant concentration (Sa,Sb), remaining almost constant with similar values to the CMC for each mixed system studied. 相似文献
9.
针对塑料挤出机控制系统成本高、速度低、精度低的问题,提出采用UniMATPLC控制方式,实践证明效果良好。 相似文献
10.
基于AM2303温湿度传感器、STC15F104W单片机和WiFi模块设计了一种无线温湿度检测节点。介绍了AM2303及其通信协议、WiFi模块及其组网特性等,并且给出了读取AM2303数据的软件流程。经测试,该节点通信距离远,组网灵活,可很好地应用于粮库粮情检测等实际工作环境。 相似文献