Microstructure and electric properties of Pr-doped Pb(Zr0.52Ti0.48)O3 ceramics

Improving the piezoelectric activity of lead zirconate titanate (PZT) ceramics is of great importance for practical applications. In this study, the influence of Pr³⁺ doping on the ferroelectric phase composition, microstructure, and electric properties on the A-site of (Pb_1-1.5xPr_x)(Zr_0.52Ti_0.48)O₃ is extensively investigated. A dense and fine microstructural sample is obtained with the introduction of Pr³⁺. The results show that the morphotropic phase boundary (MPB) moves to the rhombohedral phase region. The rhombohedral and tetragonal phases exhibit an ideal coexistence in the 4 mol.% Pr³⁺ doped (PPZT4) samples. Lead vacancy and the reduction of the potential energy barrier are considered to be the key mechanisms for donor doping, which is upheld by the Pr³⁺ doping. Combining the I-E hysteresis loops with the P-E hysteresis loops, it becomes apparent that both contribution maximums of the domain switching and residual polarisation are in PPZT4. Moreover, the thermal aging resistance of PZT is improved by doping, and the temperature stability is optimised from 83% in PZT to 96% in PPZT4. Hence, an appropriate amount of Pr³⁺ doping can effectively improve the piezoelectric activity of PZT ceramics in the MPB area and optimise the performance stability of the material under application temperatures.     

PZT陶瓷的断裂分析

与有限元法相比,无网格法由于只需节点不用单元而在压电分析中具有优越性。采用一个简单的包含有极化反转及电饱和影响的锆钛酸铅系压电陶瓷(PZT)的本构模型,以局部J积分作为断裂准则,应用再生核点法这一无网格数值法导出了作用电场与断裂载荷的关系曲线,该曲线的趋势与Park[1]的实验观察现象一致。计算程序采用面向对象方法实现。     

PZT薄膜电滞回线测试的数值补偿研究

通过Sawyer-Tower测试电路研究了铁电薄膜的电滞回线,发现薄膜漏电阻以及示波器输入电阻和电容的影响可能会使所测量的电滞回线发生形状扭曲或者使测量结果出现较大偏差,通过数值补偿方法重建了电荷平衡方程,并编制了相应的软件补偿程序。通过对溶胶-凝胶制备的PZT铁电薄膜的电滞回线测试表明,运用该数值补偿方法可以有效补偿薄膜漏电阻以及示波器输入电阻和电容对测试结果的影响,满足PZT铁电薄膜制备技术以及微机电系统中器件设计对薄膜性能测试的要求。     

基于显微视觉的宏/微双重驱动微动台的自动标定

提出了基于压电技术的微操作系统的自动标定方法,采用混合式步进电机直接驱动的宏动平台,实现系统大行程宏动定位,安装在宏动平台上的压电陶瓷驱动的微动平台和精密光栅,实现亚微米级的分辨率和定位精度,通过以上两部分实现定位机构的全闭环反馈控制,采用显微视觉反馈获取微动台操作器在图像中的位置信息进行标定。实验结果表明:系统的动态和稳定性能良好,自动标定运算速度快,运行速度达到11 frame/s,实现了对系统的精确标定,标定精度达到0.1μm。     

Effect of pH on the Crystallization of Homogeneously Precipitated Nanosized PZT Powder

Nanosized lead zirconate titanate (PZT) powder with Zr:Ti ratio in the morphotropic phase boundary region was synthesized by homogeneous precipitation of metal ions. The powder precipitated at 90°C and at pH 6.7 resulted single-phase perovskite lead zirconate titanate powder when calcined at 550°C and above for 4 hours in air. The solution pH and the precipitation temperature strongly affect the composition of the calcined powder. The results obtained by structural characterization of homogeneously precipitated powder were compared with that obtained from the conventional precipitation method using ammonia in terms of crystallization, homogeneity, and microstructure. The homogeneously precipitated powder showed smaller particle size, minimum agglomeration and uniform shape on calcination and annealing. Powdered samples that precipitated by homogeneous precipitation crystallized directly to perovskite PZT, without any intermediate pyrochlore phase formation. In contrast, the NH₃ precipitated powder converted to perovskite PZT via metastable pyrochlore and it showed phase segregation upon annealing at higher temperatures. The reaction kinetics has been studied by X-ray diffraction, differential thermal analysis, and differential scanning calorimetry.     

PZT铁电薄膜的制备及电学性能研究

使用硝酸锆作锆源的溶胶－凝胶方法制备ＰＺＴ铁电薄膜。他们的电学性能被测试包括电滞回线，电流Ｉ（ｔ）特性，漏电流，矫顽场疲劳和老化。测到的ＰＺＴ薄膜剩余极化８．２μＣ／ｃｍ~２，矫顽场６８ｋＶ／ｃｍ．簿膜的寿命可超过１０~（１１）周期。     

基于ARX模型的压电智能结构振动预测控制

采用预测控制法对压电智能结构的振动主动控制进行了实验研究，通过实验方法建立了系统的ARX模型，并在此基础上设计了预测控制器对结构进行振动主动控制。实验结果验证了该方法在压电智能结构振动主动控制中的可行性和有效性。     

水泥基压电复合材料的制备及极化工艺研究

采用压制成型法，首次以快硬早强的硫铝酸盐水泥为基体制备了水泥基压电复合材料。详细阐述了水泥基压电复合材料的制备过程；通过实验确定了适宜的极化条件，分析讨论了极化过程中出现漏电流的原因，并提出了一些初步的解决途径。结果表明，对硫铝酸盐水泥基压电复合材料来说，适宜的极化工艺参数：极化电场强度为4kV／mm，极化时间为45min，极化温度应低于130℃。     

改善PZT微位移器线性的一种方法

根据锆钛酸铅压电陶瓷的逆压电效应。设计了以８０３１单片机为核心的压电陶瓷堆微位移器提高了ＰＺＴ的线性，从而满足了在天文自适应系统中所要求的精确微位的应用。     

掺杂对PZT压电陶瓷的影响及研究进展

在介绍掺杂PZT压电陶瓷材料制备的基础上,总结出生产掺杂PZT材料的最佳掺杂条件,以及配方对压电陶瓷性能的影响,只要工艺合适,性能完全能再提高,对压电陶瓷材料的发展趋势进行了展望。