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1.
Textured surface is commonly used to enhance the efficiency of silicon solar cells by reducing the overall reflectance and improving the light scattering. In this study, a comparison between isotropic and anisotropic etching methods was investigated. The deep funnel shaped structures with high aspect ratio are proposed for better light trapping with low reflectance in crystalline silicon solar cells. The anisotropic metal assisted chemical etching (MACE) was used to form the funnel shaped structures with various aspect ratios. The funnel shaped structures showed an average reflectance of 14.75% while it was 15.77% for the pillar shaped structures. The average reflectance was further reduced to 9.49% using deep funnel shaped structures with an aspect ratio of 1:1.18. The deep funnel shaped structures with high aspect ratios can be employed for high performance of crystalline silicon solar cells. 相似文献
2.
3.
Decreasing carboxyl retention in deposits from the glow region of an acrylic acid plasma was measured by X-ray photoelectron spectroscopy and chemical derivatisation as the collection distance from the monomer vapour inlet was increased. Volatilisation of plasma polymerised acrylic acid was detected after trifluoroethanol derivatisation; this is correlated with evaporation of low molecular weight components observed previously. 相似文献
4.
G. N. Churilov R. B. Weisman N. V. Bulina N. G. Vnukova A. P. Puzir L. A. Solovyov S. M. Bachilo D. A. Tsyboulski G. A. Glushenko 《Fullerenes, Nanotubes and Carbon Nanostructures》2003,11(4):371-382
The addition of metallic Ir and Pt to a fullerene-forming, atmospheric-pressure plasma reactor was found to influence the generation of carbonaceous products. It was observed that the added metals were efficiently dispersed into the plasma and that their presence increased the yield of fullerenes. The addition of Ir led to a noticeable shift in the fullerene distribution towards C60, whereas the addition of Pt increased the proportion of C60 oxides and decreased the proportion of higher fullerenes. Addition of Ir also caused a reduction of the soot particle size and the formation of a considerable quantity of carbon nanotubes. 相似文献
5.
A.M. Efremov 《Vacuum》2004,75(2):133-142
In this work, we carried out investigations aimed at understanding the effect of gas mixing ratio on plasma parameters, gas phase composition and etch rate in CF4/Ar inductively coupled plasma. For this purpose, a combination of experimental methods and modelling was used. Experiments showed that electron temperature and electron density are not very sensitive to variations of Ar content in CF4/Ar plasma. From a zero-dimensional plasma model, the densities of both neutral and charged particles change monotonically. The analysis of surface kinetics based on an ion-assisted etching mechanism showed the possibility of non-monotonic etch rate behaviour due to a concurrence of chemical and physical etching pathways. 相似文献
6.
J. Hong E. S. Lambers C. R. Abernathy S. J. Pearton R. J. Shul W. S. Hobson 《Journal of Electronic Materials》1998,27(3):132-137
Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl3 or Cl2, with additives of Ar, N2, or H2), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch rates of 1000–2000Å·min?1 is obtained at low DC self-biases (?100V dc) and pressures (2 mTorr). The etch mechanism is characterized by a trade-off between supplying sufficient active chloride species to the surface to produce a strong chemical enhancement of the etch rate, and the efficient removal of the chlorinated etch products before a thick selvedge layer is formed. Cl2 produces smooth surfaces over a wider range of conditions than does BCl3. 相似文献
7.
J. P. Freidberg 《Journal of Fusion Energy》1998,17(2):75-79
In many academic institutions plasma science is currently viewed as a basic physics discipline encompassing a broad range of applications including fusion, astrophysics, space physics, low temperature plasma physics for the semiconductor industry, and environmental remediation of nuclear and chemical waste. Although the applications are broad, it is accurate to state that the major development of the field has been driven by the scientific needs of a single program, fusion. As such, plasma science and engineering has played an important role in graduate education since the early days of the fusion program, late 50's, early 60's. 相似文献
8.
低压铝箔交流腐蚀研究 总被引:4,自引:2,他引:2
在30Hz频率下,通过铝箔在HCl+H2SO4+HNO3+H3PO4体系中的交流腐蚀,研究腐蚀液组成中腐蚀主体及缓蚀剂对铝箔腐蚀的作用,探讨腐蚀过程中电源频率、腐蚀液温度、电流密度及腐蚀时间对铝箔腐蚀的影响。腐蚀液组成的配比恰当,有利于比容的提高。在特定的频率下采用合适的腐蚀液温度、适宜的电流密度和腐蚀时间可以提高铝箔的静电容量。 相似文献
9.
Wettability of polyimide (PI) and polypropylene (PP) films have been improved using SiOx-like thin layers deposited from a mixture of hexamethyldisiloxane (HMDSO) and oxygen in a microwave distributed electron cyclotron resonance plasma reactor. The films wettability evolution behaviors were evaluated through the results of contact angle measurements, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The plasma depositions of SiOx thin layers in presence of VUV radiation induce a contact angle decrease to about 7° and 35° for PI and PP films, respectively. XPS data showed that such difference in wettability is attributed to the increase of hydrophilic group's proportion at the surface of coated PI films due to VUV irradiation. AFM images showed that the PI surface topography remains relatively smooth when coated in presence of VUV radiation. However, in the case of PP films, AFM images revealed the growth of irregular structure due to a substrate etching effect supported by VUV radiation. For polymers coated without VUV irradiation, the deconvolution of the C1s peaks showed a significant decrease of CO bonds for both PI and PP substrates. 相似文献
10.
Plasmas play a critical role in depositing thin films or etching fine patterns while manufacturing integrated circuits. A new model for plasma diagnosis is presented. This was accomplished by linking atomic force microscopy (AFM) to plasma parameters using a neural network. Experimental AFM data were collected during the etching of silicon oxynitride films in C2F6 inductively coupled plasma. Surface roughness of etched patterns was characterized by means of discrete wavelet transformation. This led to the construction of three vertical (type I), diagonal (type II), and horizontal (type III) wavelet coefficient-based models. The performance of diagnosis models was evaluated in terms of the prediction and recognition accuracies. Both accuracies were optimized as a function of the number of hidden neurons. Comparisons revealed that the type I model yielded the largest recognition and the smallest prediction error. This was demonstrated even under stricter monitoring conditions. More improved diagnosis is expected by enhancing AFM resolution. 相似文献