Feedforward control of the transverse strip profile in hot-dip galvanizing lines

Hot-dip galvanizing is a standard technology to produce coated steel strips. The primary objective of the galvanizing process is to establish a homogeneous zinc layer with a defined thickness. One condition to achieve this objective is a uniform transverse distance between the strip and the gas wiping dies, which blow off excessive liquid zinc. Therefore, a flat strip profile at the gas wiping dies is required. However, strips processed in such plants often exhibit residual curvatures which entail unknown flatness defects of the strip. Such flatness defects cause non-uniform air gaps and hence an inhomogeneous zinc coating thickness. Modern hot-dip galvanizing lines often use electromagnets to control the transverse strip profile near the gas wiping dies. Typically, the control algorithms ensure a flat strip profile at the electromagnets because the sensors for the transverse strip displacement are also located at this position and it is unfeasible to mount displacement sensors directly at the gas wiping dies. This brings along that in general a flatness defect remains at the gas wiping dies, which in turn entails a suboptimal coating.In this paper, a model-based method for a feedforward control of the strip profile at the position of the gas wiping dies is developed. This method is based on a plate model of the axially moving strip that takes into account the flatness defects in the strip. First, an estimator of the flatness defects is developed and validated for various test strips and settings of the plant. Using the validated mathematical model, a simulation study is performed to compare the state-of-the-art control approach (flat strip profile at the electromagnets) with the optimization-based feedforward controller (flat strip profile at the gas wiping dies) proposed in this paper. Moreover, the influence of the distance between the gas wiping dies and the electromagnets is investigated in detail.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

钡盐法处理六价铬电镀废水及最优工艺参数研究

使用钡盐法对铬废水处理,对p H值在废水中的初值、反映温度计量结果、重铬酸钾的浓度等,在回收六价铬的影响效果进行了分析。对废水中的六价铬使用了源自吸收的分光光度法回收。经过处理后,废水中的p H为8~9的时候,六价铬的回收在9%。废水中的六价铬随着其浓度不断上升增加。超过10℃的时候,六价铬的反应没有非常大的影响,但是当温度降低到10℃以下的时候,回收率就逐步下降了。经过处理之后,六价铬的浓度达到了0.276 7 mg/L,达到了相关规定的标准。     

Enhancement of optical and electrical properties of SILAR deposited ZnO thin films through fluorine doping and vacuum annealing for photovoltaic applications

Undoped and fluorine doped ZnO thin films were deposited onto glass substrates using successive ionic layer adsorption and reaction (SILAR) technique and then annealed at 350 °C in vacuum ambience. The F doping level was varied from 0 to 15 at% in steps of 5 at%. The XRD analysis showed that all the films are polycrystalline with hexagonal wurtzite structure and preferentially oriented along the (002) plane. Crystallite sizes were found to increase when 5 at% of F is doped and then decreased with further doping. It was seen from the SEM images that the doping causes remarkable changes in the surface morphology and the annealing treatment results in well-defined grains with an improvement in the grain size irrespective of doping level. All the films exhibit good transparency (>70%) after vacuum annealing. Electrical resistivity of the film was found to be minimum (1.32×10⁻³ Ω cm) when the fluorine doping level was 5 at%.     

Reducing treatment zone diameter in orthokeratology and its effect on peripheral ocular refraction

PurposeTo determine whether orthokeratology (OK) induced treatment zone (TZ) diameter can be reduced by altering OK lens design, and if so the impact of modifying TZ diameter on relative peripheral refraction (RPR).Methods16 subjects (mean age 23.4 ± 1.5 years; 8 female) completed the study. Standard (Control) OK lens design (PJ, Capricornia, Australia) or a modified version (Test) where the back optic zone diameter was reduced, and back optic zone asphericity and intermediate lens curves were altered, were worn overnight only for 7-nights in a randomised double masked order, with a minimum 1-week wash out (no lens wear) between lens designs. Full correction of refractive error was targeted. Refraction; best corrected visual acuity (BCVA); RPR (Shin-Nippon NVision-k 5001) along the horizontal and vertical meridians; and corneal topography (Medmont E300) were measured before starting lens wear and in the morning after lens removal after the seventh night of lens wear for both lens designs. TZ diameter and decentration was calculated from corneal topography.ResultsAfter 7-nights of wear both lens designs created -2.00D refraction effect with no significant difference in refractive effect or change to BCVA between the designs. The Test design created a significantly smaller horizontal (4.78 ± 0.37 vs 5.70 ± 0.37 mm, p < 0.001) and vertical (5.09 ± 0.51 vs 5.92 ± 0.51 mm p < 0.001) TZ diameter. The TZ was decentered inferior temporal with no significant difference between designs. There was no significant difference between the lens designs in RPR along the horizontal and vertical meridians at any measurement period.ConclusionsOK induced TZ diameter can be reliably reduced by altering OK lens design without detrimentally effecting lens centration or refractive effect. Reducing TZ diameter did not alter RPR, though measurement artifacts could be responsible for masking an effect. Longitudinal studies are needed to assess whether smaller TZ OK lens designs increase efficacy for slowing progression of myopia.     

以IBAC为核心处理洗浴废水的试验研究

根据洗浴废水的水质特征,采用原水→混凝沉淀-过滤→固定化生物活性炭(Immobilized Biological Activated Carbon,IBAC)→微滤膜(MF)→UV消毒→出水的工艺流程.混凝沉淀-过滤物化预处理单元可以有效地减少洗浴废水中的各类污染物.IBAC生化处理单元,实现有机污染物、LAS、浴臭等有效去除,是保证出水合格的根本措施.微滤膜发挥物理截留作用、UV消毒杀死细菌和总大肠菌群.出水水质达到＜城市供水水质标准＞(CJ/T 206-2005).     

Method for Preparation of Semiconductor Quantum‐Rod Lasers in a Cylindrical Microcavity

An efficient method for preparation of semiconductor quantum rod films for robust lasing in a cylindrical microcavity is reported. A capillary tube, serving as the laser cavity, is filled with a solution of nanocrystals and irradiated with a series of intense nanosecond laser pulses to produce a nanocrystal film on the capillary surface. The films exhibit intense room‐temperature lasing in whispering‐gallery modes that develop at the film–capillary interface as corroborated from the spacing detected for the lasing modes. Good lasing stability is observed at moderate pump powers. The method was applied successfully to several quantum‐rod samples of various sizes.     

Effects of surface roughness of substrates on the c-axis preferred orientation of ZnO films deposited by r.f. magnetron sputtering

The c-axis preferred orientation of ZnO film is the most important factor for its successful application in piezoelectric devices. The effects of surface roughness of the substrate on the c-axis preferred orientation of ZnO thin films, deposited by radio frequency magnetron sputtering, were investigated. During sputtering, the oxygen content in the argon environment used was varied from 0 to 70% at a total sputtering pressure of 10 mTorr. Very smooth Si, smooth evaporated Au/Si, smooth evaporated-Al/Si, and rough sputtered-Al/Si were used as substrates. Their r.m.s. roughnesses, as measured by atomic force microscopy, were 1.27, 17.1, 21.1 and 65-118 Å, respectively. The crystalline structure and the angular spread of the (0 0* 2) plane normal to the ZnO films were determined using X-ray diffraction and X-ray rocking curves, respectively. The crystallinity and the preferred c-axis orientation of the ZnO films were strongly dependent on the surface roughness of the substrates rather than on the oxygen content of the working environment or on the chemical nature of the substrate.     

DXDK-70型包装机常见故障分析处理

我公司使用天津华特DXDK-70型包装机4台，在生产中出现的主要问题及解决方法作了详尽阐述，以供同行探讨。