VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Graphitic-C3N4/ZnCr-layered double hydroxide 2D/2D nanosheet heterojunction: Mesoporous photocatalyst for advanced oxidation of azo dyes with in situ produced H2O2

In this study the constructional modification of Graphitic carbon nitride nanosheet (GCN-ns) has been made with the aid of ZnCr layered double hydroxide (ZC-LDH) in a unique 2D-2D structure to enhance its visible light absorption. Optical and morphological study presents successful incorporation of ZC-LDH on the surface of GCN-ns. Through adjusting of GCN-ns by ZC-LDH lower recombination rate of e^?/h⁺ pairs, longer lifetimes and an increase in contamination reduction was brought out. The binary nanocomposite was employed to effectively degrade Rhodamine B under UV/vis light irradiation. The improvement in photocatalytic abilities was proven to be related to in situ self-production of H₂O₂ on GCN-ns/ZC-LDH surface by Xe light irradiation which in return accounts for additional hydroxide radical generation. Radical quenching experiments specified the main active species involved while the consequent step-scheme (S-scheme) charge transfer mechanism was proposed.     

High-efficiency Silicon Solar Cells: A Review

Over the past few decades, crystalline silicon solar cells have been extensively studied due to their high efficiency, high reliability, and low cost. In addition, these types of cells lead the industry and account for more than half of the market. For the foreseeable future, Si will still be a critical material for photovoltaic devices in the solar cell industry. In this paper, we discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells.     

Tuning the Dimensions of C60‐Based Needlelike Crystals in Blended Thin Films

A new ordered structure of the C₆₀ derivative PCBM ([6‐6]‐phenyl C₆₁‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

Lateral space-charge effects on ballistic electron transport across graded heterojunctions

Hot electron transport across graded compound semiconductor heterojunctions has been explored using a two-dimensional formulation of the self-consistent ensemble Monte Carlo method. The Al_xGa_1-xAs/GaAs heterojunction imbedded into a vertical field effect transistor with two ohmic contacts (source, drain) and two lateral Schottky gates has been used as an example. Lateral space charges modulated by the gates are shown to control ballistic injection of electrons over the heterojunction under steady state conditions. The transient response to a gate pulse is found to be determined by carrier transit from the heavily doped source contact region into the channel. A conceptual one-dimensional section model is used to explain the Monte Carlo results.     

Influence of base resistance on extracting thermal resistance for SiGe HBTs

In this article, the influence of base resistance on extracting thermal resistance for SiGe heterojunction bipolar transistors is studied and an improved approach for determining the junction temperature and thermal resistance is presented. The proposed method for extracting thermal resistance is based on the temperature sensitivity of the base–emitter (B–E) voltage when the device is biased with a fixed emitter current density. This approach not only takes into account the self‐heating during the different ambient temperature measurement but also revises the empirical equation of B–E voltage due to the influence of base resistance during the power dissipation increment measurement. Results are obtained for devices with different emitter lengths and fingers. Compared with the conventional method, the thermal resistance is about up to 15% improvement for the device with 0.3 × 1.9 μm² emitter area and 13.8% for the device with 0.3 × 13.9 μm² emitter area. The accurate thermal resistance implemented in HICUM model has resulted in better fit for transistor output characteristics. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2012.     

正置倒置异质结有机小分子太阳能电池

以MoO3为阳极修饰层,以Rubrene/C60为活性层,制备了正置和倒置异质结有机小分子太阳能电池。实验结果表明倒置器件的开路电压Voc、短路电流密度Jsc、填充因子FF和功率转换效率η比正置结构的器件分别提高了34%、20%、25%和102%。当插入BCP阴极缓冲层后,阻挡了热的Al原子对C60层的破坏,对倒置器件的性能没有明显的影响,但却显著改善了正置器件的性能,并分析了MoO3和BCP对倒置和正置器件的作用。     

基于拓扑绝缘体异质结的宽带太赫兹探测器

二维材料中的新量子态对凝聚态物理和现代光电器件的发展具有重要意义。然而具有宽带、室温和快速响应能力的太赫兹光电探测技术,由于缺乏暗电流和光吸收之间的最佳平衡,仍然面临着巨大的挑战。在这项研究中,作者合成了新型拓扑绝缘体材料GeBi₄Te₇,并搭建了其与Bi₂Te₃的范德华异质结,以实现高灵敏度的太赫兹光电探测器。在平面金属-材料-金属结构中实现了在室温下将低光子能量太赫兹波段直接转化为光电流。结果表明,基于Bi₂Te₃-GeBi₄Te₇的太赫兹光电探测器能够实现0.02～0.54 THz的宽谱探测,且具有很高的光响应率(在0.112、0.27、0.5 THz下分别为592 V·W^-1、203 V·W^-1、40 V·W^-1),响应时间小于6μs。值得注意的是,它被用于高频太赫兹的成像应用演示。这些结果为Bi₂Te₃