ERD facility for analysis of hydrogen and deuterium in solids

Hydrogen is the lightest element in nature, and so, its detection and quantitative analysis is difficult by the conventional methods utilized for other elements. In the recent years the technique of elastic recoil detection analysis (ERD) using 1–2 MeV He⁺ beam has been developed to quantitatively and simultaneously analyze hydrogen and its isotopes in solids. Such a facility has been set up using the 2 MeV Van-de-Graaff accelerator at IIT Kanpur. It facilitates H and D analysis in a material up to a depth of ∼ 1μm with a detection sensitivity of 0·1 at.% and depth resolution of about 300 ?. The application potential of this setup is illustrated by presenting the results of measurements performed on Al:H:D systems prepared by plasma source ion implantation and highT _c YBCO pellets exposed to humid atmosphere.     

Hydrogen incorporation in Ni–P films prepared by electroless deposition

Electroless NiP films, with 12 to 16 wt % P, were deposited from a moderately acid solution. Thermogravimetric analysis indicates the presence of occluded hydrogen in the layers, which desorbs upon heating. The amount of incorporated hydrogen decreases when the pH of the solution or the nickel sulfate concentration is increased; by contrast it increases with hypophosphite concentration. Cyclic voltammetry, using an electrochemical quartz crystal microbalance, confirms the existence of parasitic reactions, namely the reduction of protons of the solvent during the cathodic process and oxidation of hydrogen during the dissolution of the layers. This behaviour is in qualitative agreement with the proposed reaction scheme.     

A new synthesis procedure for titanium-containing zeolites under strong alkaline conditions and the catalytic activity for partial oxidation and photocatalytic decomposition

A new synthesis procedure for titanium-containing aluminosilicate zeolites has been obtained using a clear colloidal dispersion (sol) which was prepared with titanium isopropoxide, water, hydrochloric acid and colloidal silica, Ludox. When NaY, KL, offretite, mordenite and ZSM-5 zeolites were crystallized from the sol following conventional hydrothermal crystallization procedures, all the aluminosilicate zeolites showed the same X-ray absorption fine structure at the Ti K edge indicating framework Ti. The zeolites showed remarkable catalytic activity for the partial oxidation of cyclohexene using H₂O₂ as an oxidant and the photocatalytic decomposition of trichloroethene using water.     

国产纺丝机与引进分丝设备配套的分丝工艺研究

通过对国产VC406纺丝机与引进DW-200无捻拉伸机、MC16分丝络筒机等设备的配套和分丝生产工艺的研究,着重论述采用分丝路线生产锦纶高支单丝的纺丝、分丝工艺和该路线生产单丝的特点以及各工序对前道的要求。该配套生产线经一年多时间的正常运行,产品质量已达到国际同类产品的水平。证明有关纺丝设备的改造是成功的,工艺是可行的。     

Synthesis of Sn-Incorporated Folded Sheets Mesoporous Materials (Sn-FSM-16)

Sn-incorporated folded sheets mesoporous materials (Sn-FSM-16) with various contents of Sn were synthesized by using a mixture of water glass, SnCl₄ and NaOH as starting materials. Hexadecyltrimethyl-ammonium chloride (surfactant) was used to intercalate into the layered silicate. The reaction process was followed by measurements of XRD patterns of intermediates. The Sn-FSM-16 was formed via the following mechanism: (1) layered silicates such as - - and -Na₂Si₂O₅ were formed as intermediates by the calcination of the mixture of the starting materials; (2) the surfactant was intercalated into the layered silicates; (3) the surfactant-silicate complex with hexagonal structure was obtained as a precursor of Sn-FSM-16; (4) the precursor was calcined to decompose the surfactant in the interlayer and was changed to Sn-FSM-16. The structural aspect of Sn in Sn-FSM-16 was studied by XPS profiles of Sn 3d _5/2 and Si_2p, ²⁹ Si MAS NMR and FTIR. The content of Sn in Sn-FSM increased with increasing concentrations of both Sn and NaOH in the starting materials. The surface area of Sn-FSM-16 decreased with an increase of Sn content in Sn-FSM (1160–620 m²/g).     

Nitrogen incorporated diamond-like carbon films by microwave surface wave plasma CVD

Nitrogen incorporated diamond like carbon films have been deposited by microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD), using methane (CH₄) as the source of carbon and with different nitrogen flow rates (N₂ / CH₄ flow ratios between 0 and 3). The influence of the nitrogen incorporation on the optical, structural properties and surface morphology of the carbon films were investigated using different spectroscopic techniques. The nitrogen has been incorporated into DLC:N films which was confirmed by the X-ray photoelectron spectroscopy (XPS) measurement. Moreover, the nitrogen incorporation was accompanied by a variation in the optical gap, which was attributed to the removal or creation of band tail states.     

The availability of nitrogen following topsoil application of liquid digested sludge

Samples (375 g) of the Evesham series (clay loam) soil were incubated under aerobic conditions at 20 °C following incorporation of liquid mesophilic digested sewage sludge (1150 mg N L^–1). Simultaneously, pot trials under field conditions were also established. Total soluble N total oxides of nitrogen, ammonium N and headspace carbon dioxide samples were determined periodically over the first 480 day degrees C. Soluble organic N fractions were also calculated and it was found that the soil water concentration of available N (as nitrate N) could be predicted from summation of SON and NH₄-N on sludge application. The accumulation of nitrate N was compared with field derived data and both correlated well to a 2 pool exponential model. High rates of nitrification were observed and 70% of the organic N applied was mineralised over 480 day degrees C. The use of the relative quantity of soluble to insoluble organic N could be a possible indicator of subsequent nitrogen availability in field application.     

Atomic layer deposition of GDC cathodic functional thin films for oxide ion incorporation enhancement

In this paper, we report successful fabrication of a gadolinia-doped ceria (GDC) thin film using atomic layer deposition (ALD) for improving the performance of solid oxide fuel cells (SOFCs). By varying the deposition conditions and adjusting the configuration of the ALD supercycle, the doping ratio of ALD GDC was controlled. The morphology, crystallinity, and chemical composition of ALD GDC thin films were analyzed. ALD GDC showed different surface chemistry, including oxidation states, at different doping ratios. The application of ALD GDC in a SOFC led to an output power density enhancement greater than 2.5 times. With an anodic aluminum oxide (AAO) porous support structure, an ALD GDC thin film SOFC (TF-SOFC) showed a high power density of 288.24 mW/cm² at an operating temperature of 450°C.     

Inducing imperfections in germanium nanowires

Nanowires with inhomogeneous heterostructures such as polytypes and periodic twin boundaries are interesting due to their potential use as components for optical,electrical,and thermophysical applications.Additionally,the incorporation of metal impurities in semiconductor nanowires could substantially alter their electronic and optical properties.In this highlight article,we review our recent progress and understanding in the deliberate induction of imperfections,in terms of both twin boundaries and additional impurities in germanium nanowires for new/enhanced functionalities.The role of catalysts and catalyst-nanowire interfaces for the growth of engineered nanowires via a three-phase paradigm is explored.Three-phase bottom-up growth is a feasible way to incorporate and engineer imperfections such as crystal defects and impurities in semiconductor nanowires via catalyst and/or interfacial manipulation."Epitaxial defect transfer"process and catalyst-nanowire interfacial engineering are employed to induce twin defects parallel and perpendicular to the nanowire growth axis.By inducing and manipulating twin boundaries in the metal catalysts,twin formation and density are controlled in Ge nanowires.The formation of Ge polytypes is also observed in nanowires for the growth of highly dense lateral twin boundaries.Additionally,metal impurity in the form of Sn is injected and engineered via third-party metal catalysts resulting in above-equilibrium incorporation of Sn adatoms in Ge nanowires.Sn impurities are precipitated into Ge bi-layers during Ge nanowire growth,where the impurity Sn atoms become trapped with the deposition of successive layers,thus giving an extraordinary Sn content (＞6 at.％) in Ge nanowires.A larger amount of Sn impingement (＞9 at.％) is further encouraged by utilizing the eutectic solubility of Sn in Ge along with impurity trapping.     

Neural Network Method for Solving Partial Differential Equations

A method is presented to solve partial differential equations (pde's) and its boundary and/or initial conditions by using neural networks. It uses the fact that multiple input, single output, single hidden layer feedforward networks with a linear output layer with no bias are capable of arbitrarily well approximating arbitrary functions and its derivatives, which is proven by a number of authors and well known in literature. Knowledge about the pde and its boundary and/or initial conditions is incorporated into the structures and the training sets of several neural networks. In this way we obtain networks of which some are specifically structured. To find the solution of the pde and its boundary and/or initial conditions we have to train all obtained networks simultaneously. Therefore we use an evolutionary algorithm to train the networks. We demonstrate the working of our method by applying it to two problems.