Fabrication of oxide-based near infrared-shielding coatings for a smart window to prevent infrared-induced photoaging in human skin

Oxide-based near infrared (IR)-shielding coatings consisting of quarter‐wave stacks of oxygen-deficient tantalum oxide (Ta₂O_5?x) and silicon oxide (SiO₂) multilayers and tin-doped indium oxide (In₂O₃) (ITO) films with the thicknesses of 200–600 nm can block the passage of IR-A (wavelength: 760–1400 nm) and IR-B (wavelength: 1400–3000 nm) radiation, respectively. In this study, the optical properties and microstructure of these oxide-based IR-shielding coatings were investigated. Transmission electron microscopy images indicated that amorphous Ta₂O_5?x/amorphous SiO₂ multilayers were uniform and dense. ITO films were found to be highly crystalline and show carrier concentrations of up to 7.1 × 10²⁰ cm^?3, resulting in the strong IR-B optical absorption due to the plasma excitation of the free carriers. Oxide-based IR-shielding coatings with an ITO thickness of 420 nm were found to have near-IR shielding rates of >90% and an average visible light transmittance of >70%. The effects of IR on human keratinocytes were studied to evaluate the IR-induced photoaging in human skin. It was found that the downregulation of cellular proliferation and the enhancement of senescence-associated β-galactosidase activity induced by IR irradiation were significantly inhibited by oxide-based IR-shielding coatings. Thus, this study provides a facile method for the development of coatings for smart windows with high IR-shielding ability and high visible light transmittance.     

Structural and electronic properties of CuInSe2

Structural investigation on monocrystalline CuInSe₂ samples has been made. From the single crystal results, the space group of CuInSe₂ was confirmed to be Iˉ42d and the crystal solidification direction was investigated. Compositional uniformity of the ingots was established by EPMA and it was found that the indium concentration was greater than that for copper. Systematic annealing experiments were carried out in vacuum at different temperatures (as low as 160° C) and for different times. Large variation in resistivity was observed after the annealing treatment. P-type samples were found to convert to n-type after the heat-treatments.     

Electrosprayed and selenized Cu/In metal particle films

Nano-particulate copper and indium metal layers of 1-2 μm have been deposited by non-vacuum techniques such as doctor blade, screen printing and electrospray using alcoholic suspension pastes. Electrospray showed a high efficiency of material usage and yielded the most uniform morphology. The metal precursor layers were subjected to a thermal treatment (500-600 °C) in selenium vapor to convert the porous metal layers into CuInSe₂ compound layers. The chemical conversion, investigated by X-ray diffraction, showed the presence of the In₂O₃ impurity phase in the precursor as well as in the selenized layers.     

Improvement of the optical properties of electrodeposited CuInSe2 thin films by thermal and chemical treatments

Cu, In and Se have been codeposited in thin films by potentiostatic one-step electrodeposition. The as-deposited material has shown direct optical transitions attributable to the CuInSe₂ semiconductor, but also additional absorption corresponding to another semimetallic phase. The secondary phases are selenium and copper selenide compounds which have been determined by composition measurements. In order to eliminate the semimetallic phases and to improve the semiconductor behaviour of the electrodeposited material, thermal and chemical treatments have been performed. After heat-treatment of the samples at 400°C in flowing argon, elemental selenium loss has been detected together with an enhancement of the allowed direct optical transition. The subsequent chemical etching of the layers in a KCN solution has showed to be successful in eliminating the copper selenide phases which were responsible of the remaining sub-bandgap absorption.     

Flexible and light weight copper indium diselenide solar cells on polyimide substrates

Thin film flexible CuInSe₂ (CIS) solar cells have been fabricated for the first time on light-weight polymeric substrates. Evaporated Cu---In alloy precursors were selenized in H₂Se atmosphere at around 400°C to grow the CIS absorber layers. Low temperature techniques which are compatible with the polymeric substrates were used to deposit the window layers of CdS and ZnO. The demonstrated active area conversion efficiency of 9.3% makes this light-weight device very attractive for many terrestrial and space power generation applications where high specific power and mechanical flexibility are needed.     

D_2EHDTPA萃取铟的热力学研究

报道了用二 (2 乙基己基 )二硫代磷酸为萃取剂 ,以正庚烷为稀释剂萃取铟的热力学研究。在In2 (SO4 ) 3+Na2 SO4 +D2 EHDTPA +n C7H1 6 +H2 O体系中 ,在温度 2 78.15～ 3 0 3 .15K和离子强度 0 .1～ 2 .0mol·kg- 1 范围内 ,以Na2 SO4 为支持电解质 ,测定了萃取平衡水相中In3+浓度和pH值。计算了萃取反应的标准平衡常数K0 ,并得到经验公式logK0 =43 .93 -5 3 68.5 4 T -0 .0 699T ,同时计算了萃取反应的其他热力学量 ,并指出了焓和熵都是此萃取过程的推动力     

Change in the decomposition mode of 1-propanamine due to the presence of cations in MFI zeolite

The adsorption and thermal analysis of 1-propanamine has been compared over MFI zeolites which contain H, Ga, and In cations. In the case of H⁺-containing materials, NH₃ and propene are simultaneously desorbed above 600 K. This behavior, is well known and characteristic of the Hofmann elimination reaction. However, a distinctly different mode of reaction is observed in the case of Ga and In containing materials. NH₃ is released below 600 K, propene and other products are released above 600 K, and a stable residue remains above 800 K. It is suggested that such behavior results from Lewis acid interactions of Ga or In cations with propanamine.On leave from the Bulgarian Academy of Sciences, Institute of Organic Chemistry.     

Pulsed laser deposition of indium antimonide

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Characterization of CuInS2 thin films for solar cells prepared by spray pyrolysis

We have made a study of the chemical composition, the electrical, the optical and the structural properties of polycrystalline CuInS₂ thin films prepared by spray pyrolysis to be used for thin film solar cells. These films were deposited starting from aqueous solutions with different chemical compositions ([Cu]/[In] and [S]/[Cu] ratios) and at different substrate temperatures. In all cases, the material is p-type with grains preferentially oriented in the (112) direction of the sphalerite structure. The electro-optical properties show a very strong dependence on the [Cu]/[In] ratio in the solution. Films with copper excess have smaller resistivity and better crystallinity than those which are stoichiometric or have indium excess. The results obtained in this work show the possibility of having CuInS₂ thin films with a wide range of resistivity, a fact that could be important for making solar cells based on this material.     

热处理对制备纳米氧化铟锡(ITO)粉末的影响

以共沸蒸馏工艺辅助的共沉淀法制备了纳米氧化铟-氧化锡（ITO）粉体，研究了不同热处理温度对制备粉体的影响，结果表明，随着热处理温度的提高，粉体发生从四方结构向体心立方结构转变，晶粒出现长大现象，比表面积变化明显，化学组分保持高纯状态，综合比较，在700～800℃进行热处理可以得到尺寸均匀，晶形完整的纳米级粉体。