杯芳烃孔穴传输材料的合成及静电性能评价

设计并成功合成出一类新型的可用作有机光导体孔穴传输材料的以杯芳烃为母体的腙类衍生物，其分子含有4个电荷传输点，有利于进一步提高传输性能；制成有机光导体器件后测试其静电照相性能，可以满足有机光导体的使用要求。这将有助于促进电荷传输材料的制造开发。     

LED‐backlight feedback control system with integrated amorphous‐silicon color sensor on an LCD panel

Abstract— Thin‐film‐transistor liquid‐crystal displays (TFT‐LCDs) have the largest market share of all digital flat‐panel displays. An LCD backlighting system employing a three‐color red‐green‐blue light‐emitting diode (RGB‐LED) array is very attractive, considering its wide color gamut, tunable white point, high dimming ratio, long lifetime, and environmental compatibility. But the high‐intensity LED has problems with thermal stability and degradation of brightness over time. Color and white luminance levels are not stable over a wide range of temperature due to inherent long‐term aging characteristics. In order to minimize color point and brightness differences over time, optical feedback control is the key technology for any LED‐backlight system. In this paper, the feasibility of an optical color‐sensing feedback system for an LED backlight by integrating the amorphous‐silicon (a‐Si) color sensor onto the LCD panel will be presented. To minimize the photoconductivity degradation of a‐Si, a new laser exposure treatment has been applied. The integrated color‐sensor optical‐feedback‐controlled LED‐backlight system minimized the color variation to less than 0.008 Δu'v' (CIE1976) compared to 0.025 for an open‐loop system over the temperature range of 42–76°C.     

近红外高感光度有机光导体—Y—氧钛酞菁的研究

随着半导体激光（ＬＤ）在技术上的不断成熟，其作为激光印字机、图象照排机、数字打样机、以及数字印刷机的扫描光源被广泛应用，开发研制近红外光谱区高感光度的有机光导体成为目前光导体研究的一个前沿．在静电照相用有机光导体中，以酞菁类有机光导体最为引人注目，多...     

Conduction mechanism of metal-free phthalocyanine single crystals as a function of temperature

Metal-free phthalocyanine (H₂Pc) single crystals grown by vacuum sublimation were investigated for their conductivity (both in dark and light). The investigations consisted of dark- and photo-current variations with (i) applied electric field and (ii) temperature. The applied electric field ranged from 0·8 kV/cm to 6 kV/cm. The temperature range was from 300°K to around 570°K. The crystals were found to be photoconductive. Based on activation energies calculated from photoconductivity due to temperature dependence, an energy level scheme for H₂Pc single crystals is proposed. The model consists of two trapping levels within the forbidden gap — one at 0·4 eV below the conduction band edge from which electrons are thermally excited into the conduction band and the other acts as recombination centre at 0·3 eV above the valence band edge. The band gap is calculated to be 1·4 eV. Comparative study of the proposed model with that of earlier investigations on the same crystals of the H₂Pc is in good agreement, thereby indicating that H₂Pc is thermally stable even at relatively higher temperature as semiconductor.     

酞菁类化合物在光导材料方面的应用

介绍了可作为有机光导材料的酚菁类化合物及其光电导性能。     

弱电导材料中载流子迁移率的测量方法研究

为了精确测定弱电导材料中载流子迁移率,采用渡越时间方法测量了8-羟基喹啉配合物（Alq3）的载流子迁移率,对渡越时间方法需要的实验条件进行了理论分析和实验验证,讨论了激发光源的波长、单脉冲能量以及测量电路的积分时间常数的选取对材料载流子迁移率测量结果的影响。结果表明,采用渡越时间方法测量弱电导半导体材料中载流子迁移率时,只有严格选取合适的测量条件,才可能获得准确、可靠的测试结果。此结论有助于对有机电致发光器件载流子迁移率进行精确测定。     

Influence of AIN protective film thickness on the hardness and electrophotographic properties of organic photoconductors

The deposition of a protective film to increase the hardness of an organic photoconductor (OPC) surface is an effective method to lengthen the lifetime of the OPC. In this work, A1N protective films were deposited onto OPC samples by rf reactive magnetron sputtering with low substrate temperature. The A1N films were deposited with optimized sputtering conditions and exhibited very high transmissivity in the visible wavelength range 300-800 nm. The films caused a remarkable increase in the hardness of the OPC surface, by between 32 and 62%. The acceptance voltage, dark decay rate, photodischarge rate, difference between the residual potential and the acceptance voltage of the OPC protected by A1N film were improved. These results show A1N is a suitable protective film for OPC.     

P型GaMnAs／AlGaAs量子阱红外探测器研究

介绍了P型量子阱中空穴子带间跃迁原理,提出了一种基于铁磁性半导体的P型GaMnAs/AIGaAs量子阱红外探测器的设计方案,分析了器件的性能,对于新型量子阱红外探测器的研制提供一种可能的参考.