无明胶重铬酸盐全息记录软片的正性光抗蚀特性

对无明胶重铬酸盐全息记录软片（ＮＧＤ）的光正性抗蚀特性进行了分析研究，通过对溶解度的分析及红外光谱的测定，首次提出ＮＧＤ是一种新型的紫外正性光抗蚀材科，给出了实验及分析结果。     

Novel positive‐working aqueous‐base developable photosensitive polyimide precursors based on diazonaphthoquinone‐capped polyamic esters

Novel positive‐working aqueous‐base developable photosensitive polyimide (PSPI) precursors based on partially diazonaphthoquinone (DNQ)‐capped polyamic esters bearing phenolic hydroxyl groups and a DNQ photosensitive compound (PIC‐3) were developed. The partially DNQ capped polyamic esters were prepared from an esterification reaction of 1,2‐naphthoquinone diazide‐5‐sulfonyl chloride with the polyamic esters. The partially DNQ capped polyamic esters decreased the dark film loss effectively in the aqueous‐base developer and were able to make thicker film resists compared to the uncapped polyamic esters. The 25 mol % DNQ‐capped BisAPAF–PMDA polyamic ester and BisAPAF–ODPA polyamic ester containing 25 wt % PIC‐3 photosensitive compound showed a sensitivity of 176 and 185 mJ/cm², and a contrast of 1.68 and 1.02, respectively, in a 3‐μm film with 1.25 wt % tetramethylammonium hydroxide developer. A pattern with a resolution of 5 μm was obtained from both PSPI precursor compositions. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 2293–2300, 2003     

Synthesis and characterization of novel copolymers with acid‐labile ketal moieties derived from camphor

Novel diastereomeric acrylic ketal monomers derived from (+)‐camphor and (±)‐camphor were synthesized. To investigate the applications of the camphor derivatives on positive‐tone photoresists, the acrylic ketal monomers were copolymerized with methyl methacrylate, methacrylic acid, and n‐butyl methacrylate. The optical activities of the chiral monomers and polymers were all evaluated. After UV irradiation and postexposure baking, the optical activity of the polymers decreased because of the decomposition of the acid‐labile pendant chiral groups. The existence of alicyclic camphyl groups increased the etching resistance of the photoresists. The thermogravimetric properties of the copolymers, the exposure curves, the lithographic evaluation of the positive‐tone photoresists, and the effects of alicyclic groups on the plasma etching resistance of the copolymers were all investigated. A resolution of a line‐and‐space pattern of 0.3 μm was achieved. Acid‐catalyzed dehydration crosslinking was also found in this system. Sufficient UV irradiation and heat treatment could cause the acid‐catalyzed dehydration crosslinking of pendant carboxyl groups and thereby increase the efficiency of the thermal resistance of the polymers. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 90: 2969–2978, 2003     

248nm深紫外光刻胶

本文从化学增幅技术的产生，深紫外248nm胶主体树脂及PAG发展历程、溶解抑制剂、存在的工艺问题及解决途径多个方面综述了深紫外248nm胶的发展与进步．     

化学增幅型光致抗蚀剂用光产酸剂

综述了用于化学增幅型光致抗蚀剂的光产酸剂及机理,对于几种常用的离子型和非离子型光产酸剂分别进行了阐述,并对其特性和应用做了简单介绍.     

Multicomponent Physical Vapor Deposited Films with Homogeneous Molecular Material Distribution Featuring Improved Resist Sensitivity

Each film preparation technique affects the physical properties of the resulting coating and thus defines its applicability in modern device construction. In this context solvent based spin coated and solvent‐free physical vapor deposited molecular glass photoresist films are systematically investigated for their dissolution behavior, sensitivity, and overall lithographic performance. These investigations demonstrate that the solvent‐free physical vapor deposition leads to a marked increase in sensitivity. This could be explained by the individual molecule by molecule deposition step producing a more homogeneous distribution of the multicomponent resist system, especially the photoacid generator. In addition, this assumption is supported by former published simulations focusing on aggregate formation within thin films. This work demonstrates that the lithographic sensitivity of multicomponent resist system is an intrinsic parameter to investigate molecular material distribution and indicates that the applied film preparation technique is crucial for the corresponding performance and applicability.     

Fabrication of Photonic/Microfluidic Integrated Devices Using an Epoxy Photoresist

Using a single layer of SU‐8 photoresist to fabricate optical waveguide cores and microfluidic channels on Pyrex glass is an ideal way to achieve photonic/microfluidic integration on a single chip. To address the problem of poor bonding, a thin nanoscale intermediate polymer layer was applied to reduce the stress generated from the material processing while maintaining strong adhesion between the patterning polymer layer and Pyrex. It was found that a 186–600 nm thick intermediate layer of a specialty epoxy photoresist effectively served the purpose without deteriorating the optical performance of the involved waveguides. Quality photonic/microfluidic integrated devices with satisfied optical performance were fabricated.

     

先进光刻胶材料的研究进展

本文简述了光刻技术及光刻胶的发展过程,并对应用于193纳米光刻和下一代EUV光刻的光刻胶材料的研究进展进行了综述,特别对文献中EUV光刻胶材料的研发进行了较为详细的介绍,以期对我国先进光刻胶的研发工作有所帮助.     

Application of a chromium‐free photoresist to CRT screen processing

In 1998, Toyo Gosei Co. published a paper on the development of a new water‐soluble photopolymer of high sensitivity, PVA‐ARBB. In close co‐operation with LG. Philips Displays, the new material was further developed to be applicable in patterning the phosphor layer of a CRT screen. The new material shows about 3 times higher light sensitivity, gives 4–5% higher luminance, has no dark reaction, and is chromium‐free. It is the first chromium‐free photoresist used for phosphor patterning in CRT mass production. A comparison is presented between the conventional resist and the new resist. A survey is given of the most important process conditions.