垂直布里奇曼法生长碘化铅单晶体

碘化铅（PbI2）晶体的平均原子序数较高,有较宽的禁带宽度,作为一种新型室温核辐射探测器材料有着广阔前景．以高纯Pb和I2单质为原料,采用两温区气相输运法（TVM）成功合成出单相PbI2多晶原料,并以此为原科,用垂直布里奇曼法（VBM）生长了3种不同颜色的PhI2单晶体．研究表明：晶体生长工艺参数对晶体的质量有重要影响,适当调整温度场和安瓿在生长炉中的位置,可有效地避免或减轻晶体富碘现象,从而生长出优质的黄色PbI2单晶体。     

Real-time measurement of implanted deuterons by using the nuclear reaction H(d,p)H

We propose a method for real-time measurement of the density of implanted deuterons in solid materials during deuterium implantation. In this method, the density of implanted deuterons is measured by detecting the emitted protons from the deuteron fusion reaction between the incident deuterons and the implanted deuterons. A negative deuterium beam with an energy of 90 keV is used both for the implanted atoms and a probe beam to measure the implanted deuterons. The density of the implanted deuterium atoms was observed to be drastically different between the single crystal and poly-crystal in Ta.     

双层SiN 膜多晶硅太阳电池抗PID性能研究

以双层SiN 膜多晶硅太阳电池为研究对象,通过调整PECVD工艺参数制备不同折射率和厚度的双层氮化硅减反射膜太阳电池,并用玻璃、EVA和背板等将电池片封装成光伏组件,进行85℃、85%RH条件下组件电势诱导衰减(PID)实验。研究结果表明：(1)改变内层折射率和厚度保持外层较低的折射率时,双层氮化硅膜太阳电池均会发生严重的PID效应;(2)但随着外层折射率提高,电池PID效应显著减小,外层折射率≥2.15的电池PID实验600 h功率衰减小于5%;(3)双层氮化硅膜抗PID太阳电池的转化效率略低于普通太阳电池,但其组件的封装损失较小,与普通电池的组件功率相当,因此具有很好的应用前景。     

Indium tin oxide exhibiting high poly-crystallinity on oxygen plasma-treated polyethylene terephthalate surface

Low-resistivity indium tin oxide [ITO] film was successfully deposited on oxygen plasma-treated polyethylene terephthalate [PET] surfaces at room temperature. X-ray diffraction [XRD] measurements demonstrated that the film deposited on the PET surface that had not been treated with oxygen plasma had an amorphous structure. In contrast, after the low-power oxygen plasma treatment of the PET surface, the ITO film deposited on the PET surface had a poly-crystalline structure due to interactions between electric dipoles on the PET surface and electric dipoles in the ITO film. The minimum resistivity of the poly-crystalline ITO was about 3.6 times lower than that of the amorphous ITO film. In addition, we found that the resistivity of ITO film is proportional to the intensity of the (400) line in the film''s XRD spectra.     

Slip behaviour near a grain boundary in high-cycle fatigue of poly-crystal copper

In order to investigate the characteristic slip behaviour near a grain boundary in high‐cycle fatigue, a high‐cycle fatigue test is carried out using a copper poly‐crystal specimen, which consists of several tens of grains. Seventeen persistent slip bands (PSBs) are observed along the grain boundaries. Their location and the activated slip system are different from those expected by the Schmid factor. After the fatigue test, the crystalline orientation and the three‐dimensional shape of each grain are specified by the repetition of polishing and observation by means of an orientation‐imaging microscope (OIM). A finite‐element method (FEM) analysis is also conducted for the specimen with the same orientation and shape of grains taking into account the anisotropy. This analysis reveals that the shear stress concentrates near the grain boundaries where the PSBs are formed. The activated slip systems predicted by the maximum resolved shear stress agree well with those observed in the fatigue experiment. Thus, the characteristic slip near the grain boundary in the poly‐crystal is governed by the concentrated resolved shear stress on the specific slip system due to the deformation constraint by neighbouring crystals.