Preparation and antifouling performance of thin inorganic ultrafiltration membrane via assisted sol-gel method with different composition of dual additives

A novel TiO₂ thin film was prepared on the ceramic hollow fiber by the sol-gel method using poly(vinylpyrrolidone) (PVP) and polyvinyl alcohol (PVA) as additives. SEM images verified the formation of TiO₂ layer with various thickness using different composition of titania sols. The effect of the PVP and PVA contents on the TiO₂ sol properties, the separation and the antifouling performance of the ultrafiltration membranes were investigated thoroughly. When the contents of PVP and PVA were 1.0 wt% and 0.8 wt%, respectively, the resultant membrane showed a thickness of 0.55 μm with a pure water flux of 255 L m^?2 h^?1. In addition, the adherent foulant bovine serum albumin was applied to evaluate the antifouling performance. During the three fouling-recovery cycles, the flux recovery ratio and the flux decay ratio maintained about 99% and 30%. The BSA flux and rejection were still 169 L m^?2 h^?1 and 96.9% after the cycles, indicating a superior antifouling property.     

Performance of surface ionic conduction single chamber fuel cell prepared by the sol gel method

The performance of surface ionic conduction single chamber fuel cell (SIC‐SCFC) prepared by the sol gel method was studied on electric characteristics due to the differences of the operating temperature and humidity, the electrode distance and electrolyte film depth, and multiple cells with the series and parallel connections. The SIC–SCFC was arranged the both anode of Pt and cathode of Au on the boehmite electrolyte. The open circuit voltage (OCV) of single cell achieved a maximum of 530mV in the dry gas mixtures of O₂/H₂=50% in room temperature operation, and but it became decrease as over 60%. The OCV was maintained the constant value between operating temperatures of 30°C to 80°C, and but it was decreased sharply at over 90°C because a humidity on the cell became lower as increasing operating temperature. Then, the cell property was improved to 120°C by adding to the humidity of 70% using a humidifier. The electrode distance and the electrolyte film depth of SIC‐SCFC found to be contributed to the reductions of the cell resistance and the surface roughness on the electrode, respectively. Moreover, the power property of SIC‐SCFC was significantly improved by cell stacks comprised of the series or parallel connection of a cell.     

Low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy

The eutectic 80Au/20Sn solder alloy is widely used in high power electronics and optoelectronics packaging. In this study, low cycle fatigue behavior of a eutectic 80Au/20Sn solder alloy is reported. The 80Au/20Sn solder shows a quasi-static fracture characteristic at high strain rates, and then gradually transforms from a transgranular fracture (dominated by fatigue damage) to intergranular fracture (dominated by creep damage) at low strain rates with increasing temperature. Coffin-Manson and Morrow models are proposed to evaluate the low cycle fatigue behavior of the 80Au/20Sn solder. Besides, the 80Au/20Sn solder has enhanced fatigue resistance compared to the 63Sn/37Pb solder.     

Polymers dynamics of the nonfluoro,nano-brush repelling agent with self-stratifying property in water-based coatings

While perfluoroalkyl acids (PFAAs), also known as C8s, are used extensively in textile repellent coatings, concerns have arisen for their carcinogenicity and hazardous effects on the environment. In this study, a novel water-based, nonfluoro, and nanobrush textile repelling agent was prepared by conventional sol–gel chemistry using amorphous fumed silica and n-octyltriethoxysilane as the starting materials. Minimal interaction between the designed repelling agent and marketed water-based resins was confirmed using linear viscosity region (LVR) analysis and asymmetric-flow field-flow fractionation (AF4), suggesting the self-stratification potential of the repelling agent. More specifically, the repelling agent exhibited excellent compatibility and self-stratifying ability with a force-emulsified acrylic-based resin, affording a water contact angle of 104.3° when incorporated at 7% solid content. Performance tests carried out on thermoplastic polyurethane (TPU) revealed excellent adhesion (100/100) of a final formulation, and a significant increase in water contact angle from 80.1° to 103.8° after treatment. In addition, the fouling area after the removal of a submerged sample from a mixture of slurry, polymer, and oil decreased from 48 to 1% when the repelling agent was added. Moreover, the sludge-fouling property remained unchanged after 1000 cycles of abrasion. These findings demonstrate the potential of the described nonfluoro, nanobrush repelling agent as an environmentally safe alternative for use with commercial resins, in turn realizing a fully water-based hydrophobic coating. © 2019 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2019 , 136, 48003.     

纳米级BaAl_2O_4微粉的制备和性质

分别用溶胶 -凝胶法、低温固相反应法 ,制得了纳米级BaAl2 O4微粉 ,用电镜观察了其形貌和粒径的大小 ,用X-射线衍射仪进行了物相分析 ,测定了其纯度与晶型 ,讨论了制备方法与粒度大小的相互影响     

Mg_(0.15)Zn_(0.85)O:Tb合金薄膜的阴极射线发光性质研究

采用溶胶凝胶方法成功地制备了掺杂稀土铽离子的 Zn O和 Mg0 .1 5Zn0 .85薄膜。通过对 X射线衍射结果的分析表明 ,稀土离子替代了 Zn2 +的格位 ,进入了半导体基质的晶格中。从阴极射线发光结果可以发现 ,在Mg0 .1 5Zn0 .85O基质中 ,可以观察到来源于稀土铽离子各能级的发射 ,而 Zn O:Tb的薄膜只能观察到较强的铽离子 5D4 — 7F5能级的跃迁。这可能是由于 Mg0 .1 5Zn0 .85O基质的能隙 (3 .65 e V)比 Zn O更宽 (3 .3 e V) ,其对铽离子的能量传递更有效的缘故。     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.