全文获取类型
收费全文 | 2480篇 |
免费 | 345篇 |
国内免费 | 590篇 |
专业分类
电工技术 | 67篇 |
综合类 | 71篇 |
化学工业 | 260篇 |
金属工艺 | 96篇 |
机械仪表 | 27篇 |
矿业工程 | 9篇 |
能源动力 | 63篇 |
轻工业 | 10篇 |
石油天然气 | 6篇 |
武器工业 | 2篇 |
无线电 | 1817篇 |
一般工业技术 | 836篇 |
冶金工业 | 36篇 |
原子能技术 | 34篇 |
自动化技术 | 81篇 |
出版年
2024年 | 9篇 |
2023年 | 48篇 |
2022年 | 46篇 |
2021年 | 90篇 |
2020年 | 90篇 |
2019年 | 97篇 |
2018年 | 67篇 |
2017年 | 140篇 |
2016年 | 140篇 |
2015年 | 121篇 |
2014年 | 159篇 |
2013年 | 159篇 |
2012年 | 177篇 |
2011年 | 274篇 |
2010年 | 188篇 |
2009年 | 233篇 |
2008年 | 228篇 |
2007年 | 224篇 |
2006年 | 205篇 |
2005年 | 125篇 |
2004年 | 118篇 |
2003年 | 95篇 |
2002年 | 77篇 |
2001年 | 66篇 |
2000年 | 58篇 |
1999年 | 44篇 |
1998年 | 40篇 |
1997年 | 58篇 |
1996年 | 19篇 |
1995年 | 15篇 |
1994年 | 2篇 |
1993年 | 1篇 |
1992年 | 1篇 |
1989年 | 1篇 |
排序方式: 共有3415条查询结果,搜索用时 15 毫秒
1.
The stretchable electrodes with excellent flexibility, electrical conductivity, and mechanical durability are the most fundamental components in the emerging and exciting field of flexible electronics. This article proposes a method for fabrication of such a stretchable electrode by embedding silver nanorods (AgNRs) into a polydimethylsiloxane (PDMS) matrix that is grown by a unique glancing angle deposition technique. The surface, mechanical, and electrical properties of PDMS are significantly changed after embedding the AgNRs in it. The results show that surface roughness and polarity increase after AgNRs are embedded in the PDMS matrix. Elastic modulus (E) and hardness (H) decrease with an increase in the indentation load as a result of the indentation depth effect. Due to strong interfacial adhesion of AgNRs embedded in the PDMS matrix, the E and H of nanocomposite are increased by 167.6 and 93.3% compared with PDMS film, respectively. Furthermore, the AgNRs-PDMS film has an electrical resistivity value in the order of 10−7 Ωm. It remains conductive during various mechanical strains such as bending, twisting, and stretching, which is demonstrated using a light-emitting diode circuit. Simultaneously, the antimicrobial activity of silver could make it a promising candidate for wearable electronics. 相似文献
2.
Vaidhegi Kugarajah Moogambigai Sugumar Elamathi Swaminathan Nagaraj Balasubramani Sangeetha Dharmalingam 《International Journal of Hydrogen Energy》2021,46(42):22134-22148
Hydrothermally prepared zinc oxide nanorods are sulphonated (S–ZnO NR) and incorporated into 15% Sulphonated Poly (1,4-Phenylene Ether Ether Sulfone) (SPEES) to improve the hydrophilicity, water uptake and ion transfer capacity. Water uptake and ion transfer capacity increased to 34.6 ± 0.6% and 2.0 ± 0.05 meq g?1 from 29.8 ± 0.3% and 1.4 ± 0.04 meq g?1 by adding 7.5 wt% S–ZnO NR to SPEES. Morphological studies show the prepared S–ZnO NR is well dispersed in the polymer matrix. SPEES +7.5 wt% S–ZnO NR membrane exhibits optimum performance after three-weeks of continual operation in a fabricated microbial fuel cell (MFC) to produce a maximum power density of 142 ± 1.2 mW m?2 with a reduced biofilm compared to plain SPEES (59 ± 0.8 mW m?2), unsulphonated filler incorporated SPEES (SPEES + 7.5 wt% ZnO, 68 ± 1.1 mW m?2) and Nafion (130 ± 1.5 mW m?2) thereby suggesting its suitability as a sustainable and improved cation exchange membrane (CEM) for MFCs. 相似文献
3.
Huimin Zhao Wensi Wang Yunmei Du Yu Yang Minghui Wang Shaoxiang Li Ruixin Chen Yanru Liu Lei Wang 《International Journal of Hydrogen Energy》2021,46(18):10763-10772
In this work, we synthesized Se doped MoS2@Ni3S2 with nanosheets coated nanorods structure supported on Ni foam (MoNiSeS). Firstly, MoS2@Ni3S2 (MoNiS) nanorods was synthesized by hydrothermal method. After selenization treatment, MoSe2 successfully formed on the edge of MoS2 nanosheets and particle Ni3S2 transformed into NiSe, in which MoSe2 and NiSe acted as new phase in MoNiSeS. The obtained MoNiSeS only needs a low overpotential of 68 mV to reach the current density of 10 mA cm?2, and has a low Tafel plots of 72.77 mV dec?1 and good electrochemical durability, whose electrochemical activity is much better than that of MoNiS and NiSeS, implying the introduction of Mo and Se is beneficial to improve the electrocatalytic performance of NiS for HER. In addition, the proper amount of Mo source, which has an effect on the morphology of product, has also been investigated. For MoNiSeS, the typical nanosheets coated nanarods expose more active sites and the synergic effects is good to the improvement of the catalytic activity. Meanwhile, WNiSeS has also been prepared using the same method and the corresponding results show that the electrochemical activity of WNiSeS is much better than that of NiSeS, proving the universality of this strategy. 相似文献
4.
In this work, simple n-type electrode structures were used to enhance the electrical and optical performances of fully packaged commercially mass-produced vertical-geometry light-emitting diodes (VLEDs). The forward bias voltage of the VLED with a Y-pattern electrode increased less rapidly than that of VLEDs with a reference electrode. The VLEDs with the reference and Y-pattern electrodes exhibited forward voltages of 2.93±0.015 and 2.89±0.015 V at 350 mA and 3.77±0.015 and 3.53±0.015 V at 2000 mA, respectively. The VLEDs with the Y-pattern electrode resulted in a higher light output than the VLEDs with the reference electrode with increase in the drive current to 2000 mA. The emission images showed that the VLEDs with the Y-pattern electrode exhibited better current spreading behavior and lower junction temperatures than the VLEDs with the reference electrode. With increase in the current from 350 to 2000 mA, the VLEDs with the Y-pattern electrode experienced a 39.4% reduction in the wall plug efficiency, whereas the VLEDs with the reference electrode suffered from a 43.3% reduction. 相似文献
5.
GaN-MOCVD设备反应室流场的CFD数值仿真 总被引:11,自引:2,他引:9
采用计算流体力学方法对生长半导体材料GaN的重要设备MOCVD(金属有机物化学气相沉积)反应室中的流场结构进行了三维数值仿真.数值模拟采用基于非交错网格系统的SIMPLE算法,用有限体积方法对控制方程进行离散,并采用改进的压力-速度耦合方法进行求解.数值仿真给出了具有复杂几何结构和运动方式的GaN-MOCVD反应室中的流场结构,研究了改变几何尺寸和运行参数对MOCVD反应室流场结构的影响,对正在试制开发中的MOCVD设备的几何结构的改进和运行参数的优化提出了指导性建议. 相似文献
6.
激光剥离GaN/Al2O3材料温度分布的解析分析 总被引:2,自引:2,他引:0
分析了脉冲激光作用下GaN的衬底剥离过程。利用简化的一维模型,给出一种比较直观的脉冲激光辐照下GaN/Al2O3材料温度分布的解析形式,得到了分界面温度和脉冲宽度的关系。表明,单脉冲作用下分界面的温度与加热时间的平方根成正比,并得出脉冲过后随着深度变化温度梯度的分布。在连续脉冲作用时,分界面的温度呈锯齿状不断升高。 相似文献
7.
分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。 相似文献
8.
K. P. Lee S. J. Pearton M. E. Overberg C. R. Abernathy R. G. Wilson S. N. G. Chu N. Theodoropolou A. F. Hebard J. M. Zavada 《Journal of Electronic Materials》2002,31(5):411-415
In p-GaN implanted with Mn (3×1016 cm−2 at 250 keV), the material after annealing shows ferromagnetic properties below 250 K. Cross-sectional transmission electron
microscopy (TEM) revealed the presence of platelet structures with hexagonal symmetry. These regions are most likely GaxMn1−xN, which produce the ferromagnetic contribution to the magnetization. In p-GaN implanted with Fe, the material after annealing
showed ferromagnetic properties at temperatures that were dependent on the Fe dose, but were below 200 K in all cases. In
these samples, TEM and diffraction analysis did not reveal any secondary phase formation. The results for the Fe implantation
are similar to those reported for Fe doping during epitaxial growth of GaN. 相似文献
9.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
10.
A thermodynamic modeling of GaN was carried out to describe the thermodynamic behavior of native defects, dopants, and carriers
(free electrons and holes) in GaN semiconductors. The compound energy model (CEM) was used. An unintentionally doped GaN was
taken as an example. Oxygen was introduced into the model as the unintentionally doped impurity, according to the practical
experimental phenomena. The energies of component compounds in the model were defined based on the results of the ab initio
calculations and adjusted to fit experimental data. The thermodynamic properties of the defects and the oxygen doped were
calculated to show the facility of the model. 相似文献