Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

The electrical properties of structures consisting of a monolayer of 1-octadecene deposited on the Si surface are investigated depending on the method of passivation of the surface prior to the deposition of the film (hydrogen and ion passivation) and the intensity of illumination which activates the addition reaction of molecules of 1-octadecene to the Si atoms. The monolayer of 1-octadecene on the Si surface is stable and provides the chemical passivation of the surface. Two types of traps are found, namely, traps for holes and electrons, whose density can be varied during deposition of the monolayer by the choice of intensity of illumination and by the method of passivation of the surface. In the case of a low level of illumination and/or the use of the iodine passivation of the surface, the electron traps prevail, and, in the case of high intensity of illumination and/or hydrogen passivation of the surface, the hole traps prevail. It is shown that the use of these films provides conductivity in thin near-surface layers of Si due to providing the mode of flat bands or accumulation of carriers near the surface.     

A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment

The results of processing the experimental drain-gate characteristics of test MOS transistors after irradiation with fast electrons and subsequent heat treatment are reported. It is shown that the concentration of trapping centers in the oxide is lowered as a result of radiation-thermal treatment.     

A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

Various self-consistent semiconductor device simulation approaches require the solution of Poisson equation that describes the potential distribution for a specified doping profile (or charge density). In this paper, we solve the multi-dimensional semiconductor nonlinear Poisson equation numerically with the finite volume method and the monotone iterative method on a Linux-cluster. Based on the nonlinear property of the Poisson equation, the proposed method converges monotonically for arbitrary initial guesses. Compared with the Newton's iterative method, it is easy implementing, relatively robust and fast with much less computation time, and its algorithm is inherently parallel in large-scale computing. The presented method has been successfully implemented; the developed parallel nonlinear Poisson solver tested on a variety of devices shows it has good efficiency and robustness. Benchmarks are also included to demonstrate the excellent parallel performance of the method.     

Negative capacitance peculiarities in a-Si:H/c-Si rectifier structure

Nontrivial negative capacitance (NC) effect, observed in a-Si:H/c-Si heterostructure devices, is discussed emphasizing the theoretical interpretation of experimental data. To explain NC effect, we have performed dark current voltage (I-V) and admittance measurements (C-V, G-V, C-f and G-f). The calculated values of series resistance (R_s) and barrier height (Φ_Bo) have the values from 100 to 114.7 Ω and 0.94 to 0.83 eV, respectively. Also, below 50% helium dilution rate, diode ideality factor (n) becomes bigger than 2, because tunneling at junction interface plays a major role. The measured room temperature (294 K) dark I-V result has been used during the fitting process for suggested capacitance model (Eq. (18)). The measured NC values exhibit strongly voltage depended behavior. This unexpected behavior is attributed to the presence of inductively coupled space charge region which might possibly be stemmed from the helium diluted a-Si:H material. It is seen that the measured NC values are well fitted with suggested capacitance model (Eq. (18)). Application of suggested correction formula on to experimental C-V data yields satisfactory results. It is shown that the calculated inductance values of the investigated device range from 10 to 42 μH and after correction, NC values are no longer observed in the C_d-V data.     

Local Hall Effect and Ballistic Transport in Multi-terminal InAs-Based Lateral Spin-Valve Tunnelling Devices

A multi-terminal InAs-based lateral spin-valve tunnelling device is presented, which enables individual electrical characterization of all spin-valve components in two-terminal configuration. Both the spin-valve and the non-local geometry are available for studying spin-dependent transport. Furthermore, we propose a measurement geometry in which the spin-dependent contact resistance of the sensor electrode can be measured in three-terminal configuration. Longitudinal magnetoresistance in spin-valve geometry reveal hysteresis loops of 1 mΩ deflection as known from Hall magnetometry. In non-local geometry a polarity-dependent current–voltage characteristic at 2 K is observed. This can be understood in terms of a superposition of a diffusive resistive component with a polarity-dependent ballistic component.     

Correction of the method of current-voltage characteristics for determination of density of surface states in the system of germanium-rare-earth element fluoride

The results of studies of the interface of Ge with fluorides of Dy, La, and Sm in the metal-insulator-semiconductor structure are reported. The character of the energy spectrum and density of surface states for the interface of Ge with various fluorides of rare-earth elements is determined. For this purpose, the comparative analysis of the results obtained based on two methods, namely, the methods of current-voltage and capacitance-voltage characteristics, was carried out. The analysis showed that the information found from the current-voltage characteristics should be corrected taking into account the results obtained using other measurements, for example, the capacitance-voltage characteristics. This comparison also provided additional data on the properties of the interface; specifically, the thickness of the layer of the tunneling-thin insulator was determined.     

南堡凹陷复杂砂岩储层含水饱和度模型的研究

南堡油田第三系受沉积微相和成岩作用的影响发育大量的复杂砂岩储层,束缚水饱和度和阳离子交换量偏高,储层孔隙结构复杂,地层因素和孔隙度表现出非阿尔奇关系的特征.通过岩电分析可知,当阳离子交换附加导电性较强时,阿尔奇公式中的m、n值主要受阳离子交换量(Qv)影响,与Qv呈指数关系;当阳离子交换附加导电性较弱时,m、n值主要受孔隙结构影响,与√K/φ呈对数关系.新的解释参数确定方法考虑了阳离子交换量、孔隙结构和地层水电阻率对m、n值的影响,在复杂砂岩油气藏实际测井评价中得到了良好的效果.     

Characterization of Ni/Ho and Ni/Er fully silicided metal gates on SiO2 gate dielectric

This paper investigates the effects of Ho and Er on the sheet resistance and crystallinity of Ni(Ho) and Ni(Er) silicides, the work function (WF) modulation of Ni(Ho) and Ni(Er) fully silicided (FUSI) gate electrodes on SiO₂ dielectric, and the FUSI gated SiO₂/Si interface trap properties by using high-frequency capacitance-voltage (C-V) and photonic high-frequency C-V measurements. It was found that as the thickness percentage of rare earth (RE) metal in the Ni(Ho) or Ni(Er) increases, the sheet resistance of the silicide increases. The crystallinity decreases in the Ni(Ho) and Ni(Er) silicides, and the crystallinity decreases as the Ho thickness percentage increases. As the thickness percentage of Ho in the Ni(Ho) increases from 13% to 30%, the flatband voltage (V_FB) shift increases from −0.19 to −0.27 V. The V_FB shifts negatively 0.17 V due to 10% Er incorporation in the Ni(Er). The V_FB shift can be attributed to the effective WF decrease which may be due to the crystallinity decrease of Ni(Ho) and Ni(Er) FUSI. The interface trap density D_it calculated from the photonic high-frequency C-V curves is in good agreement with that calculated from the high-frequency and photonic high-frequency C-V curves. The Ho or Er addition does not increase the D_it.     

Studies on dielectric relaxation and defect generation for reliability assessments in ultrathin high-k gate dielectrics on Ge

In this work, we present the results of dielectric relaxation and defect generation kinetics towards reliability assessments for Zr-based high-k gate dielectrics on p-Ge (1 0 0). Zirconium tetratert butoxide (ZTB) was used as an organometallic source for the deposition of ultra thin (∼14 nm) ZrO₂ films on p-Ge (1 0 0) substrates. It is observed that the presence of an ultra thin lossy GeO_x interfacial layer between the deposited high-k film and the substrate, results in frequency dependent capacitance-voltage (C-V) characteristics and a high interface state density (∼10¹² cm⁻² eV⁻¹). Use of nitrogen engineering to convert the lossy GeO_x interfacial layer to its oxynitride is found to improve the electrical properties. Magnetic resonance studies have been performed to study the chemical nature of electrically active defects responsible for trapping and reliability concerns in high-k/Ge systems. The effect of transient response and dielectric relaxation in nitridation processes has been investigated under high voltage pulse stressing. The stress-induced trap charge density and its spatial distribution are reported. Charge trapping/detrapping of stacked layers under dynamic current stresses was studied under different fluences (−10 mA cm⁻² to −50 mA cm⁻²). Charge trapping characteristics of MIS structures (Al/ZrO₂/GeO_x/Ge and Al/ZrO₂/GeO_xN_y/Ge) have been investigated by applying pulsed unipolar (peak value - 10 V) stress having 50% duty-cycle square voltage wave (1 Hz-10 kHz) to the gate electrode.     

The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range

In order to interpret in detail the experimentally observed current-voltage-temperature (I-V-T) and capacitance-voltage-temperature (C-V-T) results of Al/p-Si metal-semiconductor Schottky barrier diodes (SBDs) we have been examined the samples in the temperature range of 150-375 K. In the calculation method, to confirm the relationship between the I-V-T and C-V-T results, we have reported a modification which includes the ideality factor, n, and tunnelling parameter δχ^1/2 in the forward bias current characteristics. In the intermediate bias voltage region (0.1 < V < 0.6 V), the semi-logarithmic plots of the forward I-V-T curves were found to be linear. From the reverse saturation currents I₀ obtained by extrapolating the linear region of curves to zero applied voltage, the values of zero bias barrier heights ?_B0 were calculated at each temperature. The values of ideality factor calculated from the slope of each curves were plotted as a function of temperature. The values of n are 3.41-1.40 indicating that the Al/p-Si diode does obey the thermionic field emission (TFE) mechanism rather than the other transport mechanism, particularly at low temperature. The high value of ideality factors is attributed to high density of interface states in the SBDs. The temperature dependence energy density distribution profile of interface state was obtained from the forward bias I-V-T measurements by taking into account the bias dependence of the effective barrier height and ideality factor. The interface states density N_ss decreasing with increasing temperature was interpreted by the result of atomic restructuring and reordering at the metal-semiconductor interface. After the modification was made to the forward current expression, we obtained a good agreement between the values of barrier height obtained from both methods over a wide temperature.