Optical and electrical properties of ITO film on flexible fluorphlogopite substrate

Indium Tin Oxide (ITO) films were prepared, at room temperature, on a fluorphlogopite substrate using magnetron sputtering technology. At various temperatures of 500 °C, 600 °C, 700 °C, 800 °C, and 900 °C, the samples were (had) annealed for 2 h (a 2-h duration). The results showed improvement in the crystalline performance of ITO film at selected annealing temperatures, with a significant reduction in resistivity at 800 °C. The lowest resistivity is 4.08 × 10^?4 Ω-cm, which is nearly an order of magnitude lower than the unannealed sample. All samples have an average light transmittance above 85% in the visible light range (400–800 nm), and with increasing annealing temperature, the average light transmittance tends to decrease. Besides, at the sensitive wavelength of 550 nm, the light transmittance is as high as 93.74%. The sheet resistance testing of the sample was through the number of bending times, which revealed that with the increase of the number of bending, the sheet resistance increases. However, after 1200 bending times, the change rate of the sheet resistance remains below 5%. Thus, the ITO film prepared on the flexible fluorphlogopite substrate revealed excellent optical and electrical properties, good flexibility, and improved stability after high-temperature annealing, which guarantees successful application in flexible electronic devices.     

Sputtered Fe1·5CoNi0.5 coating: An improved protective coating for SOFC interconnect applications

In an attempt to optimize the properties of FeCoNi coating for planar solid oxide fuel cell (SOFC) interconnect application, the coating composition is modified by increasing the ratio of Fe/Ni. An Fe_1·5CoNi_0.5 (Fe:Co:Ni = 1.5:1:0.5, atomic ratio) metallic coating is fabricated on SUS 430 stainless steel by magnetron sputtering, followed by oxidation in air at 800°C. The Fe_1·5CoNi_0.5 coating is thermally converted to (Fe,Co,Ni)₃O₄ and (Fe,Co,Mn,Ni)₃O₄ without (Ni,Co)O particles. After oxidation for 1680 h, no further migration of Cr is detected in the thermally converted coating region. A low oxidation rate of 5.9 × 10^?14 g² cm^?4 s^?1 and area specific resistance of 12.64 mΩ·cm² is obtained for Fe_1·5CoNi_0.5 coated steels.     

Morphology-controlled fabrication of nanostructured WO3 thin films by magnetron sputtering with glancing angle deposition for enhanced efficiency photo-electrochemical water splitting

Herein, the tungsten trioxide (WO₃) nanostructure thin films with different morphologies are firstly fabricated by magnetron sputtering with glancing angle deposition technique (MS-GLAD), followed by the post annealed treatment process in air ambient for 2 h. It is demonstrated that the geometry of MS-GLAD setup, mainly substrate position, played a crucial role in determining the morphology, crystallinity, optical transmittance, and photo-electrochemical (PEC) performance of the WO₃ nanostructured thin film. With the different substrate positions in the MS-GLAD system, the WO₃ nanorod film layer could be precisely changed to combine an underlying dense layer with a nanorod layer and then nanocolumnar film. Moreover, the prepared samples' chemical composition and work function are studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS), respectively. The combining WO₃ nanostructure produced high PEC efficiency compared to the single layer of the WO₃ nanorods sample and the dense WO₃ thin film sample. Thus, morphology-controlled nanostructure film based on the MS-GLAD technique in our study provides a simple approach to enhance the photo-anode for PEC water splitting application.     

Complex study of protective Cr3C2–NiAl coatings deposited by vacuum electro-spark alloying,pulsed cathodic arc evaporation,magnetron sputtering,and hybrid technology

Coatings were obtained by vacuum electro-spark alloying (VESA), pulsed cathodic arc evaporation (PCAE), magnetron sputtering (MS) techniques and VESA-PCAE-MS hybrid technology using Cr₃C₂–NiAl electrodes. The structure of the coatings was analyzed using scanning and transmission electron microscopy, X-ray diffraction and energy-dispersive spectroscopy. Mechanical properties were determined by nanoindentation, while tribological properties were assessed using pin-on-disk tribometer. Corrosion resistance was estimated by voltammetry in 1 N H₂SO₄ and 3.5%NaCl solutions. Oxidation resistance tests were performed at 800°С in air. The VESA coating had the highest thickness, low friction coefficient and high wear resistance. PCAE coating demonstrated the highest hardness (24 GPa) and elastic recovery (59%), oxidation resistance and superior corrosion resistance both in 1 N H₂SO₄ (i_corr = 70 μА/cm²) and 3.5%NaCl (i_corr = 0.74 μА/cm²) solutions. The MS coating had average mechanical properties and low corrosion current density (71 μА/cm²) in 1 N H₂SO₄. Deposition of coatings using VESA-PCAE-MS hybrid technology led to an increase in corrosion and oxidation resistance at least by 1.5 times in comparison with the VESA coating.     

Sputtered Ir–Ru based catalysts for oxygen evolution reaction: Study of iridium effect on stability

Magnetron sputtered low-loading iridium-ruthenium thin films are investigated as catalysts for the Oxygen Evolution Reaction at the anode of the Proton Exchange Membrane Water Electrolyzer. Electrochemical performance of 50 nm thin catalysts (Ir pure, Ir–Ru 1:1, Ir–Ru 1:3, Ru pure) is tested in a Rotating Disk Electrode. Corresponding Tafel slopes are measured before and after the CV-based procedure to compare the activity and stability of prepared compounds. Calculated activities prior to the procedure confirm higher activity of ruthenium-containing catalysts (Ru pure > Ir–Ru 1:3 > Ir–Ru 1:1 > Ir pure). However, after the procedure a higher activity and less degradation of Ir–Ru 1:3 is observed, compared to Ir–Ru 1:1, i.e. the sample with a higher amount of unstable ruthenium performs better. This contradicts the expected behavior of the catalyst. The comprehensive chemical and structural analysis unravels that the stability of Ir–Ru 1:3 sample is connected to RuO₂ chemical state and hcp structure. Obtained results are confirmed by measuring current densities in a single cell.     

Effect of the thicknesses of the Al2SiO5 ion conductor on the opto-electrical properties for all-solid electrochromic devices

In this study, an all-solid-state electrochromic device (ECD) with the structure of ITO/WO₃/Al₂SiO₅/NiO_x/ITO was prepared, and the effect of the Al₂SiO₅ solid electrolyte thicknesses on the opto-electrical performance was investigated. The microstructure and surface morphology were characterized using XRD, SEM and AFM, and the surface morphology and degree of surface looseness demonstrate a significant influence on the opto-electrical properties of ECDs. The charge transfer dynamics at the solid-solid interface were characterized using EIS to obtain an ionic conductivity of 4.637 × 10^-8 S/cm. CV, CA and UV–Visible spectra were employed to record the in situ electrochemical and optical properties. The results revealed that the highest optical modulation was 44.58%, the coloring and bleaching times were 14.8 s and 3.7 s, and the highest coloring efficiency was 98.17 cm²/C, which indicates that excellent opto-electrical properties were obtained. When the thickness increases, the degree of surface dense morphology transforms, and the loose morphology is more favorable for ion conductivity, which improves the opto-electrical properties. The results in this study provide insights into the understanding of Al³⁺-based all-solid-state ECDs, which promote the exploration of new types of Al³⁺ ionic conductors for all-solid-state ECDs.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

采用RF2607的WLAN自动增益控制设计

介绍了宽动态变化范围的新型可变增益放大器RF2607的特性、功能,给出了利用RF2607设计无线局域网(WLAN)通信中自动增益控制部分的实用电路.     

射频电缆组件组装工艺浅谈

近年来国内外射频电缆组件的发展很快,射频电缆组件的性能不断提高,对射频电缆组件组装工艺也提出了更高的要求.射频电缆组件组装过程多是手工操作,产品的一致性及性能很难控制,要求有良好的工艺保证,为此介绍了射频电缆组件组装工艺,包括电缆的裁剪及剥皮、内导体的连接、外导体的连接和电气性能的测试;探讨了在组装过程中应注意的问题,以及针对内导体焊接易出现虚焊问题进行研究.     

二氧化锡溅射工艺研究

SnO2 是最早使用也是目前使用最广泛的一种气敏材料 ,使用该材料设计制作的气敏传感器具有许多优点。在简要介绍溅射镀膜的成膜过程和特点的基础上 ,着重介绍了SnO2 膜的制备流程 ,分析了功率和温度变化对成膜质量的影响