Growth of high-quality GaSb by metalorganic vapor phase epitaxy

The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor. The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature hole mobility and hole concentration of 800 cm² V⁻¹ s⁻¹ and 3·10¹⁶ cm^-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence spectrum is dominated by strong excitonic lines.     

Synthesis of a Polyaminopolycarboxylic Acid and Fluorescence of Tb~(3 ) Complexes in Aqueous Solution

ＳｙｎｔｈｅｓｉｓｏｆａＰｏｌｙａｍｉｎｏｐｏｌｙｃａｒｂｏｘｙｌｉｃＡｃｉｄａｎｄＦｌｕｏｒｅｓｃｅｎｃｅｏｆＴｂ３＋ＣｏｍｐｌｅｘｅｓｉｎＡｑｕｅｏｕｓＳｏｌｕｔｉｏｎＧｏｎｇＭｅｎｇｌｉａｎ（龚孟濂），ＷｕＷｅｉｎｉｎｇ（吴炜宁），ＳｈｉＨｕ...     

Pulsed laser deposition of indium antimonide

Single crystalline oriented films of indium antimonide have been grown on cadmium telluride substrates by the pulsed laser deposition technique. The films were (111) oriented which is the substrate orientation. The composition of the grown films were found to deviate from that of the target owing to loss of antimony during evaporation. This deviation from stoichiometry led to film-substrate reaction, resulting in mixed interface. The antimony deficiency in the films were controlled by correcting the stoichiometry, which led to avoiding mixed interfaces. The stoichiometric films showed good surface morphology and well defined sharp interfaces. The IR transmission spectrum showed sharp band to band absorption and effective detection in the MWIR. Paper presented at the poster session of MRSI AGM VI, Kharagpur, 1995     

Luminescent properties of ZrO2:Tb nanoparticles for applications in neuroscience

In this paper a new generation of non-toxic nanoparticles based on the zirconium oxide doped with 0.5%Tb and co-doped by the range of 0–70% with Y was evaluated for the use as a fluorescent biomarker of neuronal trafficking. The ZrO₂:Tb nanoparticles were created by microwave driven hydrothermal method. Influence of the yttrium content and thermal processing on the Tb³⁺ related luminescence emission was discussed. The higher intensities were achieved, when host was cubic and for the nanoparticles with 33 nm. Presence of yttrium was associated with the energy coupling of the host and dopant, wide excitation band is present at 309 and 322 nm before and after calcination respectively.For the experiment on living primary neurons, nanoparticles doped with 0.5%Tb and 7%Y were chosen based on their luminescence emission intensity. Recently transfer of the nanoparticles through the barriers in the organism including blood–brain barrier following their alimentary absorption was confirmed (Godlewski and Godlewski, 2012). This raised the possibility of the nanoparticle application as a tool in the neuroscience, and the question of potential mechanisms of nanoparticle turnover in neurons. Concentration of 0.001 mg/ml of ZrO₂:0.5%Tb 7%Y in growth medium was added to the primary murine culture medium, and the intracellular trafficking of nanoparticles was observed following 15 min pre-incubation period. ZrO₂:0.5%Tb 7%Y nanoparticles were dynamically absorbed by the neurons and the dynamic passage of transport vesicles containing ZrO₂:0.5%Tb 7%Y nanoparticles was observed along the neuronal processes and in between two neighbouring neurons. Reassuming, the ZrO₂:0.5%Tb 7%Y nanoparticles proved to be biocompatible and a valid tool to assess intracellular trafficking dynamics in the neurobiology.     

Structural and photophysical properties of lanthanide complexes with N-(diphenylphosphoryl)-4-methylbenzenesulfonamide

Lanthanide complexes with N-(diphenylphosphoryl)-4-methylbenzenesulfonamide (HPMSP) as new sensitizers of visible luminescence were obtained. The series of stable lanthanide complexes Na[Ln(PMSP)₄], where Ln = Eu³⁺, Gd³⁺, Tb³⁺ were characterized by X-ray diffraction, IR, absorption, emission, and excitation spectra at 295 and 77 K as well as luminescence decay times and intrinsic emission quantum yields. The Tb complex, exhibiting relatively efficient ligand-to-metal energy transfer and strong metal-centred emission, is a promising candidate for effective UV-to-visible energy converters. Temperature dependent quenching of sensitized ⁵D₀ europium emission and presence of ⁵D₁ emission are discussed.     

New environmental-friendly yellow pigments Y_(4-x)A_xMoO_(9+δ)(A =Ta,Tb)

A series of inorganic yellow pigments with general formula Y_(4-x)A_xMoO_(9+δ)(A = Ta, Tb), where x = 0,0.05,0.1,0.2, 0.4 for Ta and χ = 0, 0.005, 0.01.0.03, 0.05 for Tb,were synthesized by a conventional ceramic method at 1400 ℃ for 6 h in air. The samples were characterized by XRD,EDS,XPS,SEM,TG-DSC,UV-vis-NIR reflectance spectroscopy and CIE L*a*b* color scales. It is found that the substitution of A(A = Ta, Tb) for Y~(3+) in Y_4 MoO_9 decreases the NIR reflectance of the pigment samples, but the developed pigments Y_(4-x)A_xMoO_(9+δ)(A = Ta, Tb) still exhibit impressive NIR solar reflectance. The brighter yellow color of inorganic pigments Y_(4-x)A_xMoO_(9+δ)(A = Ta, Tb) is available when x is about 0.1 for Ta and 0.01 for Tb. The results make them a series of potential candidates as ecological yellow pigments because of their high reflectance, lightness, intense coloration and excellent thermal and chemical stability.     

Photoluminescence and energy transfer in transparent glass-ceramics based on GdF3:RE3+ (RE = Tb,Eu) nanocrystals

In the present work,the transparent oxyfluoride glass-ceramic samples containing GdF_3:RE~(3+)(RE=Tb,Eu) nanocrystals(nGCs) were fabricated via controlled heat-treatment of precursor xerogels prepared using a sol-gel method.The formation of GdF_3 nanocrystalline phase from gadolinium(III) trifluoroacetate was verified based on XRD measurements.The average crystal sizes calculated from Scherrer formula were estimated to～10 nm as well as～6 nm for Tb~(3+)-and Eu~(3+)-doped samples,respectively.The optical behavior of prepared sol-gel samples was evaluated based on photoluminescence excitation(PLE) and emission spectra(PL) as well as luminescence decay analysis.Obtained samples exhibit the ~5D_4→~7F_J(J=6-3,Tb~(3+))and the ~5D_0→~7F_J(J=0-4,Eu~(3+)) emission bands recorded within the visible spectral area under excitation at near-UV(393 nm(Eu~(3+)),351,369,378 nm(Tb~(3+))) as well as middle-UV illumination(273 nm(Gd~(3+))).Additionally,based on recorded decay curves,the luminescence lifetimes(τ_m) for the ~5D_4(Tb3+) and the ~5D_0(Eu~(3+))excited states were also evaluated.In general,recorded luminescence spectra and double-exponential character of decay curves for nGCs indicate a successful migration of Tb~(3+) and Eu~(3+) dopant ions from amorphous silicate framework to lowphonon energy GdF_3 nanocrystal phase.     

Glass forming regions and concentration-dependent luminescence properties of Tb~(3+)-activated tellurium-lutetium-tungsten glasses

The glass-forming regions of tellurium-gadolinium-tungsten ternary system prepared at 1000℃for 60 min were firstly determined.To improve density,the full replacement of lutetium for gadolinium to form Tb³⁺-activated tellurium-lutetium-tungsten glasses with the composition of 64 TeO₂-20 WO₃-(16-y)Lu₂O₃-yTb₂O₃were designed for scintillation application.The concentration-dependent optical properties of Tb³⁺-activated tellurium-lutetium-tungsten glasses were fully investigated by transmittance,excitation and emission spectra,together with the luminescence decay curves.The energy transfer mechanism was discussed according to Huang’s rule.The optimized 4 mol%Tb₂O₃activated tellurium-lutetium-tungsten glasses with the density of 6.49 g/cm³and the lifetime of 0.551 ms are developing to be suitable for the potential detection of slow events in the future work.     

Luminescence properties of the Langmuir-Blodgett film of terbium(III) stearoylanthranilate

Terbium(III) stearoylanthranilate has been prepared as a high property Z-type Langmuir-Blodgett (LB) film on various substrates by a vertical transfer process. The UV-visible absorption spectra and the low angle X-ray diffraction peaks have been collected in order to investigate the molecular arrangement and aggregation in the LB films. The average molecular orientation in multilayer stacking was determined by Attenuated Total Reflection Spectroscopy. The influence of the chemical environment of terbium within the LB films on the luminescence properties has been discussed.     

AlGaSb/GaSb quantum wells grown on an optimized AlSb nucleation layer

Five-period AlGaSb/GaSb multiple quantum wells (MQW) are grown on a GaSb buffer.Through optimizing the AlSb nucleation layer,the low threading dislocation density of the MQW is found to be (2.50±0.91)×108cm-2 in 1-μm GaSb buffer,as determined by plan-view transmission election microscopy (TEM) images.High resolution TEM clearly shows the presence of 90°misfit dislocations with an average spacing of 5.4 ran at the AlSb/GaAs interface,which effectively relieve most of the strain energy.In the temperature range from T = 26 K to 300 K,photoluminescence of the MQW is dominated by the ground state electron to ground state heavy hole (el-hhl) transition,while a high energy shoulder clearly seen at T > 76 K.can be attributed to the ground state electron to ground state light hole (e1-lh1) transition.