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LIU Yan HUI Xidong and WANG Huanrong) Department of Materials Science Engineering Shandong Institute of Architecture Engineering Jinan China) State Key Laboratory for Advanced Metals Materials University of Science Technology Beijing Beijing China) Key Laboratory of Liquid Structure Heredity of Materials Ministry of Education Shandong University Jinan China 《稀有金属(英文版)》2003,22(4)
The influence of pre-annealing on thermal stability of the amorphous Zr70Cu20Ni10 alloy was reported by em-ploying the differential scanning calorimetry (DSC) and high-resolution transmission electron microscopy (HRTEM) tech-niques. It has been observed that the supercooled liquid region decreases with increasing the annealing time under isothe-mal conditions, indicating that the thermal stability of the amorphous Zr70Cu20Ni10 alloy decreases gradually. HRTEM ob-servations reveal that there exist some ordered atomic clusters in the amorphous matrix at the relaxation stage. These or-dered atomic clusters can be regarded as precursors for the precipitation of the crystalline phases in the subsequent crystal-lization process. The reasons resulting in the decrease in thermal stability of the amorphous Zr70Cu20Ni10 alloy with anneal-ing time are discussed through the Gaussian decomposition for the radial distribution function of the amorphous Zr70Cu20Ni10 alloy. 相似文献
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采用金属有机分解法(MOD)在LNO(100)/Si衬底上制备了Pb0.985La0.01(Zr0.4Ti0.6)O3铁电薄膜,在薄膜的快速退火过程中,增加了一个中间温度预退火过程,并研究了该过程对薄膜晶型结构和铁电性能的影响.结果发现,中间温度预退火过程可以影响薄膜对晶型结构的选择.没有中间温度预退火过程的薄膜,显示出(100)择优取向;而经中间温度预退火的薄膜则表现为随机取向.对薄膜铁电性能的研究表明,没有中间温度预退火过程的薄膜的铁电性能较差,经380℃预退火的薄膜显示出最佳的铁电性能.晶型结构取向和缺陷是影响PLZT。薄膜铁电性能的两个主要因素. 相似文献
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系统研究了固溶前预退火温度对6111铝合金冷轧板和T4P态组织和力学性能的影响。测试了力学性能,计算了LDR值;表征了显微组织、SEM组织和XRD织构构成。结果表明:预退火温度对6111铝合金的屈服强度影响较小;经300 ℃×2 h预退火处理后,抗拉强度发生明显降低,由245 MPa降低到230 MPa;当预退火温度高于100 ℃后,伸长率呈直线下降。n值和r值均随预退火温度先升高后降低,n值在200 ℃时达到最大值0.289,r值在100 ℃时达到最大值0.958。200 ℃×2 h预退火处理后,LDR值达到最大值2.005。经300 ℃×2 h预退火处理后,T4P态基体晶粒尺寸明显长大,在60~150 μm范围。200 ℃×2 h预退火处理试样,T4P态Cube织构体积分数最高,达到了13.5%。 相似文献
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研究了化学成分、预先退火温度对铸轧3102H26空调箔组织与性能的影响。 相似文献
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《International Journal of Hydrogen Energy》2022,47(89):37774-37782
CuBi2O4 is an ideal photocathode material owing to its suitable optical bandgap (~1.8 eV), positive onset potential (~1 V vs. RHE), and high theoretical photocurrent density (19.7–29 mA/cm2). However, its relatively poor efficiency in transporting carriers hinders it from achieving high photoelectrocatalytic performance. In this study, we propose the preparation of phase-pure large-grain CuBi2O4 thin film photocathodes through solvent pre-annealing and two-step annealing, with the aim of improving the carrier transport efficiency. The maximum grain size of CuBi2O4 reached an astonishing 1 μm at the optimal ethanol vapor concentration. Through time-resolved photoluminescence, we discovered that after treating CuBi2O4 with the proposed technique, the carrier lifetime improved by more than one order of magnitude. This improvement was achieved because the large grain size reduced the inhibition of carrier transport through grain boundaries. Therefore, the photocurrent density of large-grained CuBi2O4 reached 0.27 mA/cm2, which is 27 times that of a direct annealing treatment. Finally, we used atomic layer deposition to load a ZnO protective layer and Pt catalyst onto the surface of CuBi2O4 photocathodes, and the photocurrent density of CuBi2O4/ZnO/Pt was further increased to 0.46 mA/cm2 without using an electron scavenger (0.4 V vs. RHE). 相似文献
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介绍了溶胶-凝胶法制备掺Dy元素的Bi4Ti3O12(Bi3.4Dy0.6Ti3O12,BDT)薄膜的工艺过程,并研究了不同预退火气氛对沉积在Pt/Ti/SiO2/Si基片上的BDT薄膜铁电性能的影响。空气中的预退火,薄膜中的H,C等有机成分分解不彻底,有部分残留在薄膜中;而O2气氛下的预退火,由于O2充足,薄膜中的有机成分可以完全分解。退火过程中BDT薄膜晶粒的生长和取向可以受到残留的有机成分的影响,进而对BDT薄膜的铁电性有较为显著的影响。在外加400kV/cm的电场时,空气中预退火的BDT薄膜的剩余极化(2Pr)值和矫顽场(Ec)分别为26.37μC/cm2和114.2kV/cm,而O2气氛下预退火的BDT薄膜的2Pr和Ec分别为36.28μC/cm2和113.6kV/cm,表明O2气氛下预退火可显著提高BDT薄膜的剩余极化值,改善其铁电性能。 相似文献
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采用DSC、XRD 检测方法,分析了经673 K((Tg-100 K)<T<Tg)不同时间(20,40,60 min)预退火处理后,Fe68Ni1Al5GazP9.65B4.6Si3C6.75非晶合金的玻璃转变温度Tg、起始晶化温度Tx、晶化峰温度Tp、玻璃转变过程中的比热容增量△Cp,g的变化以及经823 K晶化反应后的XRD图谱.结果表明:Fe68Ni1Al5Ga2P9.65B4.6Si3C6.75非晶合金的玻璃转变温度Tg和比热容增量△Cp,g随预退火时间的延长而逐步增加;起始晶化温度Tx和第一晶化峰温度Tp1随预退火时间呈现出逐渐减小的趋势;其晶化后样品衍射峰形貌相似,衍射峰的强度略有不同.利用结构弛豫理论对实验结果进行了分析. 相似文献
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对二次冷轧后高温退火前3.2%Si取向硅钢在实验室自主设计研发的脉冲磁场预退火管式炉内进行不同温度的预退火处理,通过光学显微镜与XRD对其组织织构进行分析,利用硅钢片磁性能测试系统对高温退火后的试样进行磁性能分析。结果表明,经脉冲磁场预退火处理后,整体上取向硅钢平均晶粒尺寸随预退火温度升高略微减小,晶粒尺寸主要集中在10~25 μm范围内;通过ODF图及{200}极图分析可知,经脉冲磁场预退火后,最强织构随预退火温度的升高从{112}<110>织构变化到{223}<110>织构和{111}<110>织构;随着预退火温度的升高,高温退火后试样的磁性能反而降低。 相似文献