Structure and phase-composition of Ti-doped gas atomized Raney-type Ni catalyst precursor alloys

Raney-type Ni precursor alloys containing 75 at.% Al and doped with 0, 0.75, 1.5 and 3.0 at.% Ti have been produced by a gas atomization process. The resulting powders have been classified by size fraction with subsequent investigation by powder XRD, SEM and EDX analysis. The undoped powders contain, as expected, the phases Ni₂Al₃, NiAl₃ and an Al-eutectic. The Ti-doped powders contain an additional phase with the TiAl₃ DO₂₂ crystal structure. However, quantitative analysis of the XRD results indicate a far greater fraction of the TiAl₃ phase is present than could be accounted for by a simple mass balance on Ti. This appears to be a (Ti_xNi_1−x)Al₃ phase in which higher cooling rates favour small x (low Ti-site occupancy by Ti atoms). SEM and EDX analysis reveal that virtually all the available Ti is contained within the TiAl₃ phase, with negligible Ti dissolved in either the Ni₂Al₃ or NiAl₃ phases.     

Effect of Sb implantation on copper silicides formation and morphology after annealing of Cu/Si structures

In this work, the solid state reaction between a thin film of copper and silicon has been studied using Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy and microprobe analysis. Cu films of 400 and 900 Å thicknesses are thermally evaporated on Si(1 1 1) substrates, part of them had previously been implanted with antimony ions of 5×10¹⁴ or 5×10¹⁵ at. cm⁻² doses. The samples are heat-treated in vacuum at temperatures in the range 200–700 °C for various times. The results show the growth and formation of Cu₃Si and Cu₄Si silicides under crystallites shape dispatched on the sample surface, independently of the implantation dose. On the other hand, it is established that the copper layer is less and less consumed as the antimony dose increases, resulting in the accumulation of Sb⁺ ions at silicide/Si interface and in the silicide layer close to surface. The exposure of samples to air at room temperature shows the stability of Cu₄Si phase whereas the Cu₃Si silicide disappears to the benefit of the silicon dioxide formation. The observed phenomena are discussed.     

含稀土硅化铁热电材料的电学性能初探

采用悬浮真空熔炼和800℃,168h真空退火方法制备了含稀土Sm的FeSi2基金属硅化物,并对其晶体结构、See-beck系数、电阻率进行了初步研究。实验发现,名义组成为Fe0.6Sm0.4Si2的试样的热电功率因子从室温时的0.26×10-4W·m-1K-2随温度上升到500℃时的1.6×10-4W·m-1K-2,比不含Sm或含Sm量很少的对比试样高一个数量级左右。其原因被认为是由于Sm的外层4f电子的贡献。     

Electronic struture of titanium silicides

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Mechanical alloying of Mo—Si—Fe powders

Mechanical milling behavior of Mo-Si-Fe powders was investigated u sing XRD, SEM and TEM techniques. The mixtures of elemental molybdenum (>99%), s ilicon (>99%) and iron (>98%) powders with a stoichiometry of Mo5-xFe xSi3 (x=0.5, 1, 2) were milled in a planetary mill for up to 195 h. For all three powder mixt ures, high-energy milling of 60h led to formation of the Mo(Fe, Si) supers aturated solid solution (Moss); and to a remarkable expansion of the solub ility of Fe, Si in molybdenum. The transformation of Moss to an amorphous phase was identified after longer time milling. In the milling process, the grain size of Mo (Fe, Si) decreased gradually and the internal stress increased linearly. After 40 h milling, the grain size was reduced to about 11 nm. SEM analysis of milled powders showed that the particle size increased initially with milling time. After 195 h milling, particles exhibited a spherical morphology and the particle size were reduced to about 100 nm.     

Oxidation kinetics and high temperature in-situ observation of the oxidation behaviour of NbSi_2 at 1023 K

Pest oxidation has been known for a long time in refractory transition-metal disilicides such as NbSi2 and MoSi2[1―4]. However, the origin of pesting reaction of these materials is still under debate. Although the pesting phenomenon in NbSi2 has been reported in several works[5―7], a direct study of the mechanism is scarce at the moment. Compared to NbSi2, pesting in MoSi2 has received relatively extensive attention. Mckamey et al.[8] showed fragmentation near 773K occurred easily in as…     

熔渗法制备SiC/ FexSiy 复合材料显微结构和性能

用Fe_xSi_y (Fe₃Si, Fe₅Si₃, FeSi ) 熔体自发浸渗SiC 粉体预制件制备出致密度高达9615 %的SiC/ Fe_xSi_y复合材料。利用XRD、OM 和SEM 等对复合材料的相组成、显微结构和力学性能进行了分析和表征。研究发现, 自发浸渗过程中SiC 在Fe_xSi_y 熔体中有溶解和析出, 导致复合材料的相组成和显微结构发生变化。Fe₃Si 渗入后, 复合材料中有碳析出, 并生成Fe₅Si₃ 和FeSi 两种新相;Fe₅Si₃ 和FeSi 的渗入无碳析出, 而是发生碳化硅烧结、粒子合并和晶粒长大;Fe₅Si₃ 熔体渗入超细碳化硅(0.5μm ) 粉体预制件后, 生成大的碳化硅晶粒和碳化硅单晶。借助CHEMSAGE 热力学数据库对1873 K 时Fe-Si-C 体系的平衡相图进行了定量分析, 研究了SiC 在Fe_xSi_y 熔体中的稳定性;解释了铁的三种硅化物浸渗后, SiC 颗粒形态的变化。通过对复合材料显微硬度、弯曲强度和可靠性(威布尔系数) 的测试, 分析了熔渗法SiC/ Fe_xSi_y 复合材料结构和性能的关系。     

Influence of zirconium content on microstructure and creep properties of Mo–9Si–8B alloys

Mo–Si–B alloys with a molybdenum solid solution accompanied by two intermetallic phases and Mo₅SiB₂ are a prominent example for a potential new high temperature structural material. In this study the influence of 1, 2 and 4 at.% zirconium on microstructure and creep properties of Mo–9Si–8B (at.%) alloys produced by spark plasma sintering is investigated. Creep experiments have been carried out at temperatures of 1100 °C up to 1250 °C in vacuum. The samples exhibit sub-micron grain sizes as small as 450 nm due to the chosen production route. With addition of 1 at.% zirconium, formation of SiO₂ on the grain boundaries can be prevented, thereby enhancing grain boundary strength and creep properties significantly. Moreover ZrO₂ particles also enhance creep resistance of the molybdenum solid solution. Creep deformation is a combination of dislocation creep in the grains including dislocation-particle interaction and grain boundary sliding leading to intergranular fracture surfaces. It is promising to use grain size adjustments in order to balance the creep and oxidation resistance of the investigated material.     

Corrosion behaviour of amorphous Ni–Si thin films on AISI 304L stainless steel

Abstract

Nanoscale Ni – Si thin films are widely used in commercial microelectronic devices because of their promising electrical properties as well as their chemical stability. However, their application in corrosive environment has not been frequently addressed in the literature. In this study, amorphous Ni_0.66Si_0.33, Ni_0.40Si_0.60, and Ni_0.20Si_0.80 thin films are prepared on AISI 304L stainless steel by means of ion-beam sputter (IBS) deposition and their corrosion behaviour is studied using potentiodynamic polarisation measurements. The electrochemical measurements were conducted in 0.05M HCl solution at room temperature. By means of optical interferometer, scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS), the surface morphology and chemical composition of the thin films were examined before and after the electrochemical measurement. The evaluated results showed that the Ni–Si thin films may exhibit improved corrosion resistance over the 304L substrate provided that Si content is high enough to facilitate the formation of a Si-rich passive film.     

Experimental parameters during optical floating zone crystal growth of rare earth silicides

Optical floating zone（FZ） crystal growth involving growth stability and as-grown crystal perfection is affected by experimental conditions and the specific material. Referring to rare earth silicides, high purity of raw rare earth elements and ambient argon atmosphere are crucial to grow high-quality crystals; the maximum zone height is determined by equating the capillary forces of the surface tension; and asymmetric counter rotation of crystal and feed rod with convex（toward the melt） interfaces are favored to reach single crystals. Influences of several other growth parameters were also discussed in detail in this paper.