Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Specific emitter identification for satellite communication using probabilistic neural networks

Electromagnetic signal emitted by satellite communication (satcom) transmitters are used to identify specific individual uplink satcom terminals sharing the common transponder in real environment, which is known as specific emitter identification (SEI) that allows for early indications and warning (I&W) of the targets carrying satcom furnishment and furthermore the real time electromagnetic situation awareness in military operations. In this paper, the authors are the first to propose the identification of specific transmitters of satcom by using probabilistic neural networks (PNN) to reach the goal of target recognition. We have been devoted to the examination by exploring the feasibility of utilizing the Hilbert transform to signal preprocessing, applying the discrete wavelet transform to feature extraction, and employing the PNN to perform the classification of stationary signals. There are a total of 1000 sampling time series with binary phase shift keying (BPSK) modulation originated by five types of satcom transmitters in the test. The established PNNs classifier implements the data testing and finally yields satisfactory accuracy at 8 dB(±1 dB) carrier to noise ratio, which indicates the feasibility of our method, and even the keen insight of its application in military.     

超高压大容量铝电解电容器的研制

分析了大功率设备用超高压大容量铝电解电容器的特点,通过研制工作电解液、制订制作工艺及零部件设计方案,研制出的超高压大容量铝电解电容器具有损耗角正切小(tgδ为0.25)、承受纹波电流能力强(100 Hz,2.12～27.8 A)及寿命长的特点,耐久性达到85℃,5 000 h。     

数字电视传输流的实时码率变换系统

数字视频压缩后通常是打包成传输流的形式进行传送，年个传输流有其固定的发送码率，在某些应用场合，比如信道调制前端，需要对输入传输流码率进行改变以适应该信道要求，描述了一种全硬件实现，双路输出，实时，节目可选择的码率变换系统的原理及具体实现。     

电容传感器在使用中存在的几个问题及处理方法

随着电容测量技术的迅速发展，电容传感器在非电量测量和自动检测中得到广泛应用，但它在使用过程中也存在一些问题，针对在使用电容传感器过程中存在的几个问题，从电容传感器的原理和工作过程两个方面进行了讨论，并提出行之有效的处理方法。     

重Fermi子体系反常比热的理论研究

利用文献中Ｋｏｎｄｏ格子理论模型，研究了重Ｆｅｒｍｉ子体系比热与温度的反常关系。     

热流法计算高温炉内辐射传热

高温炉内的辐射传热是工业生产中常遇到的问题。过去，人们在应用热流法计算辐射传热时遇到了一定的困难，使计算结果与实际有一定的偏差。本文运用文献［１］中给出的新热流数学模型，开发出由新热流方程与能量方程相耦合的计算机程序，其中的比热流参数由线加热热源情况下计算得到。用该程序计算了实验室用马弗炉内的温度场，并且用热电偶实测了炉内的一些温度值，理论计算与实测值符合很好。     

低压铝箔交流腐蚀研究

在３０Ｈｚ频率下，通过铝箔在ＨＣｌ＋Ｈ２ＳＯ４＋ＨＮＯ３＋Ｈ３ＰＯ４体系中的交流腐蚀，研究腐蚀液组成中腐蚀主体及缓蚀剂对铝箔腐蚀的作用，探讨腐蚀过程中电源频率、腐蚀液温度、电流密度及腐蚀时间对铝箔腐蚀的影响。腐蚀液组成的配比恰当，有利于比容的提高。在特定的频率下采用合适的腐蚀液温度、适宜的电流密度和腐蚀时间可以提高铝箔的静电容量。     

In－BiCaVIG的晶体生长与性能

本文报导了用助熔剂法成功地生长大尺寸掺铟ＢｉＣａＶＩＧ晶体的方法以及实验结果，介绍了该单晶在近红外区的磁光器件中的重要应用。     

Relaxation phenomena caused by equilibration of point defects

Relaxation phenomena due to equilibration of point defects in metals are reviewed. The relaxation effect in specific heat observed in tungsten and platinum confirms that in both cases the nonlinear increase in the high-temperature specific heat has to be attributed to point-defect formation. Relaxation phenomena observed by measurements of electrical resistivity and positron annihilation are also considered. The comparison of the data seems to be favorable for the conclusion that all the phenomena are of one origin.