Study of Pb-based and Pb-free perovskite solar cells using Cu-doped Ni1-xO thin films as hole transport material

SCAPS solar cell simulation program was applied to model an inverted structure of perovskite solar cells using Cu-doped Ni_1-xO thin films as hole transport layer. The Cu-doped Ni_1-xO film were made by co-sputtering deposition under different deposition conditions. By increasing the amount of the Cu-dopant, the film crystallinity enhanced whereas the bandgap energy decreased. The transmittance of the thin films decreased significantly by increasing the sputtering power of copper. High quality, uniform, compact, and pin-hole free films with low surface roughness were achieved. The structural, chemical, surface morphology, optical, electrical, and electronic properties of the Cu doped Ni_1-xO films were used as input parameters in the simulation of Pb-based (MAPbI_3-xCl_x) and Pb-free (MAGeI₃) perovskite solar cells. Simulation results showed that the performance of both Pb-based and Pb-free perovskite solar cell devices significantly enhanced with Cu-doped Ni_1-xO film. The highest power conversion efficiency (PCE) for the Pb-free perovskite solar cell is 8.9% which is lower than the highest PCE of 17.5% for the Pb-based perovskite solar cell.     

Eco-friendly tape casting of borosilicate glass/Al2O3 sheets for LTCC applications

This work reports the innovative development of a borosilicate glass/Al₂O₃ tape for LTCC applications using an eco-friendly aqueous tape casting slurry. Polyvinylpyrrolidone (PVP) and polyacrylic acid (PAA) were the respective dispersants, while carboxymethyl cellulose (CMC) and styrene acrylic emulsion (SA) were the respective binders. The results showed that PVP was more suitable than PAA as the dispersant for the aqueous casting slurry, and that 1.5 wt% PVP would achieve well dispersion of CABS glass/Al₂O₃ powder in the aqueous slurry. Moreover, a small amount of 2.0 wt% CMC binder could yield smooth CABS glass/Al₂O₃ tapes crack free. A high-quality CABS glass/Al₂O₃ tape with a smooth surface was made from an aqueous slurry containing 1.5 wt% PVP dispersant, 2.0 wt% CMC binder, and 2.0 wt% PEG-400 plasticizer. The density, tensile strength, and surface roughness of the green tape were 2.05 g/cm³, 0.87 MPa, and 148 nm, respectively. The resulting CABS glass/Al₂O₃ composites sintered at 875 °C exhibited a bulk density of 3.14 g/cm³, a dielectric constant of 8.09, a dielectric loss of 1.0 × 10^?3, a flexural strength of 213 MPa, a thermal expansion coefficient of 5.30 ppm/^°C, and a thermal conductivity of 3.2 W m^?1 K^?1, thus demonstrating its broad prospects in LTCC applications.     

Large domain-wall currents in epitaxial Au/BiFeO3/SrRuO3 thin-film capacitors with modulated oxygen vacancy and wall densities

Large domain wall (DW) conductivity in an insulating ferroelectric plays an important role in the future nanosensors and nonvolatile memories. However, the wall current was usually too small to drive high-speed memory circuits and other agile nanodevices requiring high output-powers. Here, a large domain-wall current of 67.8 μA in a high on/off ratio of ~4460 was observed in an epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitor with the minimized oxygen vacancy concentration. The studies from read current-write voltage hysteresis loops and piezo-response force microscope images consistently showed remaining of partially unswitched domains after application of an opposite poling voltage that increased domain wall density and wall current greatly. A theoretical model was proposed to explain the large wall current. According to this model, the domain reversal occurs with the appearance of head-to-head and tail-to-tail 180° domain walls (DWs), resulting in the formation of highly conductive wall paths. As the applied voltage increased, the domain-wall number increased to enhance the on-state current, in agreement with the measurements of current-voltage curves. This work paves a way to modulate DW currents within epitaxial Au/BiFeO₃/SrRuO₃ thin-film capacitors through the optimization of both oxygen vacancy and domain wall densities to achieve large output powers of modern domain-wall nanodevices.     

Photophysical investigation of the formation of defect levels in P doped ZnO thin films

Zinc oxide (ZnO) offers a major disadvantage of asymmetry doping in terms of reliability, stability, and reproducibility of p-type doping, which is the main hindrance in realization of optoelectronic devices. The problem is even more complicated due to formation of various native defects in unintentionally doped n-type ZnO. The realization of p-type conductivity in doped ZnO requires an in-depth understanding of the formation of an effective shallow acceptor, as well as donor-acceptor compensation. Photophysical properties such as photoconductivity along with photoluminescence (PL) studies have unprecedentedly and effectively been utilized in this work to monitor the evolution of various in-gap defects. Phosphorus (P) doped ZnO thin films have been grown by RF magnetron sputtering under various Ar to O₂ gas ratios to investigate the effect of O₂ on the donor-acceptor compensation by comprehensive photoconductivity measurements supported by the PL studies. Initial elemental analyses indicate presence of abundant zinc vacancies (V_Zn) in O-rich ambience. The results predict that P sits in the zinc (Zn) site rather than the oxygen (O) site causing the formation of P_Zn–2V_Zn acceptor-like defects, which compensates the donor defects in P doped ZnO films. Photocurrent spectra uniquely reveal presence of more oxygen vacancies (V_O) defects states in lower O₂ flow, which gets compensated with an increase in the O₂ flow. Successive photocurrent transients indicate probable presence of more V_O in the films grown with lower O₂ flow and more V_Zn in higher O₂ flow. Overall the photosensitivity measurements clearly present that O-rich ambience expedites the formation of acceptor defects which are compensated, thereby lowering the dark current and enhancing the ultraviolet photosensitivity.     

基准平面垂直断面法在爆破漏斗试验中的应用

系统阐述了基准平面垂直断面法在爆破漏斗试验中测量爆破漏斗体积的基本原理,并将隧道激光断面仪应用于金厂河矿1 750 m水平15^#采场底部切割巷道爆破漏斗试验爆破漏斗体积测量中。通过与传统体重法等计算法所得漏斗体积分析比较,结果表明基于隧道激光断面仪与3D Mine软件分析的基准平面垂直断面法实用性强、操作方便、结果直观可靠,达到试验预期目的。     

水压爆破拆除超大容积水池

简要介绍了组合式超大容积（８５０ｍ３）水池在水压爆破拆除过程中爆破方案选择、参数选取等方面的经验，并对爆破效果进行了分析，为同类工程施工提供了可借鉴的经验。     

Sputtered Ir–Ru based catalysts for oxygen evolution reaction: Study of iridium effect on stability

Magnetron sputtered low-loading iridium-ruthenium thin films are investigated as catalysts for the Oxygen Evolution Reaction at the anode of the Proton Exchange Membrane Water Electrolyzer. Electrochemical performance of 50 nm thin catalysts (Ir pure, Ir–Ru 1:1, Ir–Ru 1:3, Ru pure) is tested in a Rotating Disk Electrode. Corresponding Tafel slopes are measured before and after the CV-based procedure to compare the activity and stability of prepared compounds. Calculated activities prior to the procedure confirm higher activity of ruthenium-containing catalysts (Ru pure > Ir–Ru 1:3 > Ir–Ru 1:1 > Ir pure). However, after the procedure a higher activity and less degradation of Ir–Ru 1:3 is observed, compared to Ir–Ru 1:1, i.e. the sample with a higher amount of unstable ruthenium performs better. This contradicts the expected behavior of the catalyst. The comprehensive chemical and structural analysis unravels that the stability of Ir–Ru 1:3 sample is connected to RuO₂ chemical state and hcp structure. Obtained results are confirmed by measuring current densities in a single cell.     

Mixing enhancement mechanism of combined H2–Water jets in supersonic crossflows in a combustor with an expanded section

To obtain the mixing enhancement mechanism of H₂–Water combined jets in supersonic crossflows in a combustor with expanded section for rotating detonation ramjet, the flow field shape and spray structure were studied by experimental and numerical methods. The Eulerian–Lagrangian method was used to investigate the diffusion mechanism and H₂–Water interaction law of combined jets with different sequences. At the same time, high-speed photography and the schlieren technique were used to capture the flow field. The effects of jet pressure drop, orifice diameter, orifice spacing, incoming Mach number, and other parameters on the penetration depth of water jets were studied. The results of experiment and simulation show that using H₂–Water combined jets, the penetration depth of the jet spray can be greatly increased and the jet mixing effect can be significantly improved, which will contribute to the engine's ignition and stable combustion. In the case of pre-water/post-H₂, the penetration depth of the hydrogen jet is greater. In the case of pre-H₂/post-water, the hydrogen jet raises the water spray mainly by protecting the integrity of the water column.     

钢管套筒灌浆连接轴向受拉性能模拟试验研究

为研究钢管套筒灌浆连接轴向受拉破坏过程及破坏机理，试验中设计了16组48个钢管套筒灌浆连接试件，试件采用钢板代替圆钢管，并进行静载试验。分析了灌浆料裂缝扩展过程、荷载-相对位移曲线，并对抗剪键高距比、灌浆料厚度、侧向力等因素对破坏过程及承载力的影响进行分析。结果表明：对于不设置抗剪键的套筒灌浆连接试件，斜裂缝随机产生，裂缝分布不均匀；对于设置抗剪键的套筒灌浆连接试件，裂缝首先出现在底部抗剪键位置处，与水平方向夹角约为30°，随后在中部和上部抗剪键位置处分别出现斜裂缝。由于每个抗剪键上荷载分担并不均匀，与抗剪键接触的灌浆料逐渐达到极限压应力，达到极限状态时，承载力全部由抗剪键间的机械咬合力承担，在连接承载力中，可忽略摩擦力和胶结力作用。随着抗剪键高距比h/s增大，各试件初始剪切刚度相差不大，承载力增大，但增幅逐渐减小，建议抗剪键高距比0.06g/s>0.3，同时需要满足灌浆料灌注的施工要求。     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.