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排序方式: 共有505条查询结果,搜索用时 15 毫秒
1.
D. Xu T. Enoki T. Suemitsu Y. Umeda H. Yokoyama Y. Ishii 《Journal of Electronic Materials》1998,27(7):L51-L53
We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures,
which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved
performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different
surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively,
the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry
of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to
conduct “recess engineering” for InAlAs/InGaAs MODFETs. 相似文献
2.
P Sallagoity F Gaillard M Rivoire M Paoli M Haond S McClathie 《Microelectronics Reliability》1998,38(2):700
This paper presents Shallow Trench Isolation (STI) process steps for sub-1/4 μ CMOS technologies. Dummy active areas, vertical trench sidewalls, excellent gap filling, counter mask etch step and CMP end point detection, have been used for a 0.18 μm CMOS technology. Electrical results obtained with a 5.5 nm gate oxide thickness show good isolation down to 0.3 μm spacing. Good transistor performances have been demonstrated. 相似文献
3.
4.
GaAs器件工艺中等离子刻蚀及计算机辅助监控技术研究 总被引:2,自引:1,他引:1
陈正明 《固体电子学研究与进展》1994,14(2):182-185
用N2气和NF3反应气体,在较低的刻蚀功率下实现了用薄正性光刻胶AZ1518作掩模,均匀、快速刻蚀SiO2,SiON,Si3N4,WN,W等材料的等离子刻蚀技术。利用到蚀过程中射频参数的变化和计算机技术,将射频参数的变化在计算机屏幕上实时显示,实现了计算机辅助监控和终点检测技术。 相似文献
5.
Shafeeque G. Ansari Mushtaq Ahmad Dar Young-Soon Kim Hyung-Kee Seo Gil-Sung Kim Rizwan Wahab Zubaida A. Ansari Jae-Myung Seo Hyung-Shik Shin 《Korean Journal of Chemical Engineering》2008,25(3):593-598
A comparative study for the nucleation of diamond was carried out using surface treatment like (i) surface scratching with
1 μm diamond paste and (ii) surface etching using chlorine plasma at different RF powers (50, 100 and 150 W). Atomic force
microscopic study shows variation in roughness from 31 nm to 110 nm. Scratching results in random scratches, whereas plasma
etches a surface uniformly. Scanning electron microscopic observations show well faceted crystallites with a predominance
of angular shaped grains corresponding to 〈100〉 and 〈110〉 crystallite surfaces for the scratched as well as plasma etched
substrate. Surface etching at 150 W plasma power results in a better growth in comparison with 50 and 100 W plasma powers.
Chlorine-radical is found responsible for the changes in the growth morphology. Raman spectroscopy shows a sharp peak at 1,332
cm−1 and a peak at ∼1,580 cm−1 for both samples. 相似文献
6.
Tetsuya Ikuta Yuki Miyanami Hayato Iwamoto Takayoshi Shimura Kiyoshi Yasutake 《Science and Technology of Advanced Materials》2007,8(3):142-145
Selective epitaxial Si with a high arsenic concentration of 2.2×1019 atoms/cm3 was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride. 相似文献
7.
GaAs、GaP、InP、InGaAsP、AlGaAs、InAlGaAs的化学腐蚀研究 总被引:2,自引:0,他引:2
许兆鹏 《固体电子学研究与进展》1996,16(1):56-63
为研制全集成光开关、微片式激光器等,对GaAs、GaP、InGaAsP、InAIGaAs、AlGaAs等材料的化学腐蚀进行了实验研究。为了研制InAlGaAs/InAlAs/InAlGaAs微片式激光器,开发了H3PO4/H2O2/H2O薄层腐蚀液和HCl/H2O选择性腐蚀液;为了研制InGaAsP/InP/InGaAsPTbar型光波导,开发了HCl/H3PO4/H2O2薄层腐蚀液和HCl/H2O2选择性腐蚀液;为了研制GaP、InGaP光波导,开发了HCl/HNO3/H2O薄层腐蚀液。它们都具有稳定、重复性好、速率可控、腐蚀后表面形貌好等特点。除此之外,蚀刻成的GaP光波导侧壁平滑无波纹起伏。此种结果尚未见报导。 相似文献
8.
A mechanism of formation of copper nanoparticles is proposed for alkaline etching of a sputtering-deposited Al-30 at.%Cu alloy, simulating the equilibrium θ phase of 2000 series aluminium alloys. Their formation involves enrichment of copper in the alloy beneath a thin alumina film, clustering of copper atoms, and occlusion of the clusters, due to growth of alumina around the clusters, to form nanoparticles. The proposed mechanism is supported by medium energy ion scattering, Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy of the alloy following immersion in the sodium hydroxide solution, which disclose the enrichment of copper and the generation of the nanoparticles in the etching product of hydrated alumina. The generation of the nanoparticles is dependent upon the enrichment of copper in the alloy in a layer of a few nanometres thickness, with no requirement for bulk de-alloying of the alloy. 相似文献
9.
Characterisation of n-type GaAs, etched in a 5:1:1 mixture of H2SO4:H2O2:H2O, was performed using X-ray photoelectron spectroscopy (XPS) and electrochemical AC impedance. Quantitative XPS analysis of GaAs indicated that the as-received wafers had a gallium-rich native oxide which was not affected by solvent degreasing treatments. Subsequent, oxidative etching formed a thinner arsenic-rich oxide. It is suggested that etching causes initial thinning of the native oxide; subsequently, transport of Ga and As ions occurs through the film by high-field ionic conduction. Arsenic enrichment in the resultant oxide film arises from the greater mobility of Ga3+ ions compared with As3+ ions as well as the relative solubility of Ga2O3 compared with As2O3. The as-received oxide film thickness, determined from the ratio of the oxide to substrate XPS peaks, was approximately 1.1 nm. After etching this was reduced to about 0.7 nm. This thickness is consistent with the driving voltage for oxide formation being provided by the electrochemical potential difference between hydrogen peroxide and the GaAs wafer (i.e. between 0.4 V, for As, and 1.2 V, for Ga, at a nm V−1 ratio of 2). Capacitance measurements, derived from electrochemical impedance data, combined with film thickness data, gave a value of about 5 for the dielectric constant of As2O3. 相似文献
10.