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本文给出了一种新颖的微波有源滤波器的拓扑结构及综合方法,并对有源滤波电路进行了计算机模拟,结果表明本文给出的微波有源滤波器电路具有优良的的窄带滤波特性,通带内正向增益大于10dB,带外抑制大于30dB。 相似文献
3.
王福臣 《固体电子学研究与进展》1992,(4)
对WC76型S频段大功率振荡用砷化镓场效应晶体管的微波性能作了介绍。文中给出了测试振荡器的设计。测试结果表明,WC76型振荡管在s频段的微波性能良好,振荡频率在3GHz左右时,输出功率可达3.5w,直流—射频转换效率可达44%,而且在2~4GHz的整个S频段均能满意地工作。 相似文献
4.
阐述了功率GaAsMESFET器件热阻测试中温敏参数VGSF和测试电流Im的选取,给出了1~5W器件典型温敏参数的温度测试系数M与测试电流Im的关系。讨论了测试延迟时间tmd对△VGSF测量值的影响和三种校正方法。 相似文献
5.
Riho Kataishi Takayuki Ikeda Toshiki Sasaki Kouhei Toyotaka Daiki Nakamura Hiroyuki Miyake Yuji Iwaki Kazunori Watanabe Yuichi Yanagisawa Hisao Ikeda Harue Nakashima Nobuharu Ohsawa Shingo Eguchi Satoshi Seo Yoshiharu Hirakata Shunpei Yamazaki Daisuke Kurosaki Masakatsu Ohno Chris Bower Darryl Cotton Andrew Matthews Piers Andrew Catalin Gheorghiu Johan Bergquist 《Journal of the Society for Information Display》2014,22(8):381-392
In this study, white organic electroluminescent devices with microcavity structures were developed. A flexible high‐resolution active‐matrix organic light‐emitting diode display with low power consumption using red, green, blue, and white sub‐pixels formed by a color‐filter method was fabricated. In addition, a side‐roll touch display was developed in combination with a capacitive flexible touch screen. 相似文献
6.
汪涛 《安徽电子信息职业技术学院学报》2015,(4)
场效应管及其放大电路是模拟电子技术教学难点之一,传统的教学往往效果欠佳。场效应管和三极管都是半导体放大器件,二者有很多相似之处,在学习了三极管及其放大电路之后,运用比较的方法对场效应管及其放大电路进行教学,可以温故而知新,找到两者之间的异同点,提高学习兴趣和效率,达到事半功倍的效果。 相似文献
7.
Ryu Komatsu Ryo Nakazato Takeru Sasaki Akio Suzuki Naoyuki Senda Takuya Kawata Yasuhiro Jimbo Tomoya Aoyama Naoto Ohno Susumu Kawashima Hisao Ikeda Shingo Eguchi Yoshiharu Hirakata Shunpei Yamazaki Takashi Shiraishi Seiji Yasumoto Masataka Nakada Masataka Sato Chris Bower Darryl Cotton Andrew Matthews Piers Andrew Catalin Gheorghiu Johan Bergquist 《Journal of the Society for Information Display》2015,23(2):41-49
In this study, a 5.9‐inch foldable active‐matrix organic light emitting diode (AMOLED) display was developed. A folding test was performed repeatedly. The display survived the folding test (100,000 folds) with a curvature radius of 2 mm. To protect an organic light emitting diode (OLED) against moisture, inorganic passivation layers are provided on the upper and lower sides of the flexible display. Using our transfer technology, high density passivation layers can be obtained. The measured water vapor transmission rate of the layer is 7 × 10?6 g/m2?day or less, which improves OLED reliability. With these techniques, we have developed a book‐type display, which is repeatedly foldable like a book, and a tri‐fold display including a display area, which is foldable in three. 相似文献
8.
The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has fueled research into novel structures for gas sensing. Metal oxide semiconductor (MOS) devices employing a catalytic metal layer have emerged as one of the leading sensing platforms for such applications, owing to their high sensitivity and inherent capability for signal amplification. The limited operating temperature of such devices employing silicon as the semiconductor has led research efforts to focus on replacing them with devices based on silicon carbide (SiC). More recently, MOS devices having different oxide layers exhibiting improved sensing performance have emerged. Considering the amount of research that has been carried out in this area in recent times, it is important to elucidate the new findings and the gas interaction mechanisms that have been ascribed to such devices, and bring together several theories proposed by different research groups. In this paper we first highlight the needs which have driven research into SiC based field effect hydrogen and hydrocarbon sensors, illustrate the various structures being investigated, and describe the device evolution and current status. We provide several sensing examples of devices that make use of different oxide layers and demonstrate how their electrical properties change in the presence of the gases, as well as presenting the hydrogen gas interaction mechanisms of these sensors. 相似文献
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10.
A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique
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