NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

Using ion implantation to adjust the transition temperature of superconducting films

We summarize a continuing investigation into using ion implantation to alter the transition temperature of superconducting thin films. The primary motivation for the work presented here was to study the feasibility of using magnetic ion doping to replace the bi-layer T_c control process currently used for certain cryogenic detector applications at National Institute for Standards and Technology. The results from work with various ion species implanted into aluminum, molybdenum, titanium and tungsten host films are presented.     

Influence of ion bombardment on the properties and microstructure of unbalanced magnetron deposited niobium coatings

The effect of the ion bombardment to unbalanced magnetron deposited, approximately 1.5 and 4.5 μm thick, Nb coatings have been investigated as the bias voltage was varied from U_B=−75 to −150 V. Increasing bias voltage increased the hardness of the coating from 4.5 to 8.0 GPa. This was associated with residual stress and Ar incorporation into the Nb lattice. Strong {110} texture developed in the samples deposited at low bias voltages, while beyond U_B=−100 V a {111} texture became dominant. However, strong {111} texture was observed only with the thicker 3Nb coatings. Secondary electron microscopy investigation of the coating topography showed fewer defects in the thicker coatings. All coatings exhibited good corrosion resistance, with the thicker coatings clearly outperforming the thinner ones. Excessive bias voltages (U_B=−150 V) was found to lead to poor adhesion and loss of corrosion resistance.     

电子束、离子束与蓝宝石相互作用的研究

研究了电子束、离子束作用于Al2O3表面时成分的变化，表明无论电子束或离子束都能使Al2O3发生分解，产生导电的元素Al。实验在PHI610·SAM上进行，电子束轰击下（3keV，O．5μA，入射角60°）10s就有元素Al分解出来，2min以后就达到饱和，分解析出量随时间成a（1－e－bt）的关系。离子束轰击下同样发生元素Al的分解，但当Ei＞3keV时，由于剥离速率加大，溅射5min时表面Al峰反而比1min时要弱。这时表面Al含量处于分解析出与溅射剥离的动态平衡中。实验还发现了Al2O3的解析与表面成分有关（如碳的含量）。最后讨论电子束与离子束的解析机理。     

Secondary ion emission from Ti and Si targets induced by medium energy Ar ion bombardment - Experiment and computer simulation

The paper presents experimental results of secondary ion energy distributions obtained for Ti and Si targets bombarded by 20-30 keV monoisotope Ar⁺ ion beam. The influence of the extraction voltages between target and a slit of the electrostatic energy analyzer entrance on the energy distributions of secondary ions was investigated. After optimization of the secondary ion extraction system, the mass spectra of secondary ions were also measured. The investigations were done using recently built experimental system. Experimental data are compared with the computer simulation results obtained using TRQR and SATVAL codes.     

离子束混合工艺对材料抗蚀性能的影响

本文介绍了离子束混合工艺方法。与直接注入相比较,离子束混合所使用的设备造价低1/4—1/2,而生产效率可提高1—2个数量级,因而使生产成本大幅度降低,这无疑对离子束工艺的实际应用将产生巨大的促进作用。 通过对轴承材料(GCr15和Cr4Mo4V)经Cr、N、Ta不同元素的混合处理后,在0.5M H_2SO_4和0.1M NaCl的缓冲溶液中的阳极极化曲线表明经混合处理后的两种材料试样,其抗蚀能力和抗点蚀能力均大大提高,这与直接注入的试样效果是一致的。 通过俄歇谱仪和透射电镜的分析结果表明混合是成功的,且在一定的条件下,形成非晶组织。 本文的结论是,无论是离子的直接注入还是离子束混合,对提高轴承材料的抗腐蚀性能都是有效的方法,特别是离子束混合技术具有更大的应用前景。     

A novel technique for fabrication of metallic structures on polyimide by selective electroless copper plating using ion implantation

The successful use of palladium ion implantation into polyimide to seed an electroless plated film of copper on the polyimide surface is reported. Polyimide (Hitachi PIX 3400) was implanted with palladium ions to doses of 1.5 × 10¹⁵ − 1.2 × 10¹⁷ ions cm⁻² using a MEVVA ion implanter. The implanted ions acted as sites for nucleation of copper film. A copper film was then deposited on implanted polyimide using a commercial electroless plating solution. The ion energy was kept low enough to facilitate a low critical ‘seed’ threshold dose that was measured to be 3.6× 10¹⁶ Pd ions cm⁻². Test patterns were made using polyimide to study the adaptability of this technique to form thick structures. Plated films were studied with optical microscopy, Rutherford Backscattering Spectrometry (RBS) and Profilometry. The adhesion of films was qualitatively assessed by a ‘scotch tape test’. The film growth (thickness) was observed to be linear with plating time. A higher implantation dose led to greater plating rates. The adhesion was found to improve with increasing dose.     

特征X射线能谱法测定Fe^＋注入小麦种子的深度

用１１０ｋｅＶ Ｆｅ＾＋离子束垂直注入小麦种胚后，在扫描电子显微镜上沿种子纵沟剖面，在不同深度上测量Ｆｅ元素被激发出的特征Ｘ射线强度分布，结果表明分布呈指数衰减，与晶体中的热扩散分布相类似，并对此进行了讨论。     

硅中硼离子注入校准样品的研制

本文主要介绍了硅中硼离子注入校准样品的制备与研究。分别用三台SIMS仪器对样品进行了深度剖析与比对,并对用作校准目的的样品主要参数进行了定值。