Event-triggered variable horizon Supervisory Predictive control of hybrid power plants

The supervision of a hybrid power plant, including solar panels, a gas microturbine and a storage unit operating under varying solar power profiles is considered. The Economic Supervisory Predictive controller assigns the power references to the controlled subsystems of the hybrid cell using a financial criterion. A prediction of the renewable sources power is embedded into the supervisor. Results deteriorate when the solar power is unsteady, owing to the inaccuracy of the predictions for a long-range horizon of 10 s. The receding horizon is switched between an upper and a lower value according to the amplitude of the solar power trend. Theoretical results show the relevance of horizon switching, according to a tradeoff between performance and prediction accuracy. Experimental results, obtained in a Hardware In the Loop (HIL) framework, show the relevance of the variable horizon approach. Power amplifiers allow us to simulate virtual components, such as a gas microturbine, and to blend their powers with that of real devices (storage unit, real solar panels). In this case, fuel savings, reaching 15%, obtained under unsteady operating conditions lead to a better overall performance of the hybrid cell. The overall savings obtained in the experiments amount to 12%.     

High-voltage and low specific on-resistance power UMOSFET using P and N type columns

For the first time, we present the unique features exhibited by power 4H–SiC UMOSFET in which N and P type columns (NPC) in the drift region are incorporated to improve the breakdown voltage, the specific on-resistance, and the total lateral cell pitch. The P-type column creates a potential barrier in the drift region of the proposed structure for increasing the breakdown voltage and the N-type column reduces the specific on-resistance. Also, the JFET effects reduce and so the total lateral cell pitch will decrease. In the NPC-UMOSFET, the electric field crowding reduces due to the created potential barrier by the NPC regions and causes more uniform electric field distribution in the structure. Using two dimensional simulations, the breakdown voltage and the specific on-resistance of the proposed structure are investigated for the columns parameters in comparison with a conventional UMOSFET (C-UMOSFET) and an accumulation layer UMOSFET (AL-UMOSFET) structures. For the NPC-UMOSFET with 10 µm drift region length the maximum breakdown voltage of 1274 V is obtained, while at the same drift region length, the maximum breakdown voltages of the C-UMOSFET and the AL-UMOSFET structures are 534 and 703 V, respectively. Moreover, the proposed structure exhibits a superior specific on-resistance (R_on,sp) of 2 mΩ cm², which shows that the on-resistance of the optimized NPC-UMOSFET are decreased by 56% and 58% in comparison with the C-UMOSFET and the AL-UMOSFET, respectively.     

新结构MOSFET

和传统平面结构MOSFET相比，新结构MOSFET具有更好的性能(如改善的沟道效应(SCE)，理想的漏诱生势垒降低效应(DIBL)和亚阈值特性)和更大的驱动电流等。文章主要介绍了五种典型的新结构MOSFET，包括平面双栅MOSFET、FinFET、三栅MOSFET、环形栅MOSFET和竖直结构MOSFET。随着MOSFET向亚50nm等比例缩小，这些新结构器件将大有前途。     

加强电站无功管理

加强电站无功管理，不但能改善供电质量，满足电网的要求，提高单位的经济效益，而且使设备的安全运行得到了保障。     

Joint scheduling and power control supporting multicasting in wireless ad hoc networks

This paper addresses the problem of power control in a multihop wireless network supporting multicast traffic. We face the problem of forwarding packet traffic to multicast group members while meeting constraints on the signal-to-interference-plus-noise ratio (SINR) at the intended receivers. First, we present a distributed algorithm which, given the set of multicast senders and their corresponding receivers, provides an optimal solution when it exists, which minimizes the total transmit power. When no optimal solution can be found for the given set of multicast senders and receivers, we introduce a distributed, joint scheduling and power control algorithm which eliminates the weak connections and tries to maximize the number of successful multicast transmissions. The algorithm allows the other senders to solve the power control problem and minimize the total transmit power. We show that our distributed algorithm converges to the optimal solution when it exists, and performs close to centralized, heuristic algorithms that have been proposed to address the joint scheduling and power control problem.     

Analysis of spontaneous electrochemical oscillations by energy distribution technique

Analysis of non-stationary electrochemical oscillations emerges utilization of the techniques allowing an observation of time evolution of their parameters such as instantaneous frequency, amplitude or frequency band. An algorithm of extraction of these parameters can be based on one of linear or quadratic time-frequency representations of oscillations record. In this paper, the authors present representatives of such transformations (Choi-Williams and Cone-shaped) originating from one of the most popular joint time-frequency energy distribution—Wigner-Ville distribution. Short introduction to the mathematics of the topic discussed is provided, then the authors present an example of application in the analysis of current oscillations of copper dissolution process.     

LDD方法在提高电路工作电压中的应用研究

研究了利用轻掺杂漏结构来制作高电源电压器件的工艺方法。分析了ＬＤＤ结构参数对器件击穿特性的影响，并结合实验结果对Ｎ＾－区的注入剂量，长度及引入的串联电阻进行了优化设计。     

NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

Failure analysis of aluminum cable steel reinforced (ACSR) conductor of the transmission line crossing the Paraná River

The failure of the conductor of the 460 kV overhead transmission line located along the crossing of the Paraná River was investigated. As a result of this failure, a blackout took place in the southern states of Brazil in January of 2002, reaching approximately 67 million inhabitants. Investigation of the external aluminium layer of the ACSR conductor near the fracture showed typical static deformation marks and dynamic fretting wear tangential marks, both associated with the presence of Al₂O₃ debris. Additionally, encrusted silicon particles were observed on the external surface of the strands. The internal Al layer showed elliptical deformation marks also associated with Al₂O₃ debris. Both Al₂O₃ and Si particles are efficient abrasive material, which associated with slight relative motion of metallic surfaces (clamp/strand and strand/strand) can promote fretting wear. Two types of fracture surface of the Al strands were identified: 45° and quasi-normal surfaces, the former being the predominant type. Delamination and particle detachment were the mechanisms of superficial degradation observed on the Al strands, indicating that the rupture of the strands occurred under a gross slip fretting regime induced by sub-conductor oscillation. Inspection of the internal surface of as-cast Al–10%Si spacer clamps revealed different stages of intense circumferential wear caused by the preferential cracking and particle detachment of the eutectic constituent of the as-cast microstructure. This intense wear reduces the clamping contact pressure, which allows higher displacement amplitude and leads to the critical fretting regime. Finally, a few suggestions are discussed to minimise the occurrence of future failures.