Commitment-based device-pairing protocol with synchronized drawings and comparison metrics

This article presents a new method for pairing devices securely. The commitment-based authentication uses a fuzzy secret that the devices only know approximately. Its novel feature is time-based opening of commitments in a single round. We also introduce a new source for the fuzzy secret: synchronized drawing with two fingers of the same hand on two touch screens or surfaces. The drawings are encoded as strings and compared with an edit-distance metric. A prototype implementation of this surprisingly simple and natural pairing mechanism shows that it accurately differentiates between true positives and man-in-the-middle attackers.     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。     

基于VW2010芯片的嵌入式多媒体监控系统压缩/解压卡设计

在简要分析了多媒体监控系统发展现状的基础上，提出了一种基于VW2010压缩／解压芯片的多媒体压缩／解压卡的设计方案，给出了基于VW2010的多媒体监控系统压缩和解压卡的硬件结构图以及在Linux系统下VW2010的驱动程序，同时给出了在Linux Redhat7．3下编写的测试程序，并进行了全面的测试。     

HART协议物理层设备的测试（II）

本文介绍HART协议物理层设备的测试要求、测试设备、测试方法及测试时的一些特别说明。     

50W CO_2激光雕刻机控制系统

介绍非金属材料表面加工的CO2激光雕刻机的基本原理其控制系统。     

Investigation of Ni/4H-SiC diodes as radiation detectors with low doped n-type 4H-SiC epilayers

The development of SiC minimum ionising particle (MIP) detectors imposes severe constrains in the electronic quality and the thickness of the material due to the relatively high value of the energy required to produce an electron–hole pair in this material by MIP against the value for Si. In this work, particle detectors were made using semiconductor epitaxial undoped n-type 4H-SiC as the detection medium. The thickness of the epilayer is on the order of 40 μm and the detectors are realised by the formation of a nickel silicide on the silicon surface of the epitaxial layer (Schottky contact) and of the ohmic contact on the back side of 4H-SiC substrate. The low doping concentration (6×10¹³ cm⁻³) of the epilayer allows the detector to be totally depleted at relatively low reverse voltages (100 V). We present experimental data on the charge collection properties by using 5.486 MeV -particles impinging on the Schottky contact. A 100% charge collection efficiency (CCE) is demonstrated for reverse voltages higher than the one needed to have a depletion region equal to the -particle extrapolated range in SiC. The diffusion contribution of the minority change carriers to CCE is pointed out. By comparing measured CCE values to the outcomes of drift–diffusion simulation, values are inferred for the hole lifetime within the neutral region of the charge carrier generation layer.     

High-k材料MOS器件的PISCES-II模拟

High-k材料是指介电常数k高于SiO2的材料。使用high-k材料做栅绝缘层,是减小MOS器件栅绝缘层直接隧道击穿(DirectTunneling,DT)电流的有效方法。文章在二维器件模拟软件PISCES-II中添加了模拟以high-k材料为栅绝缘层的MOS器件模型,并对SiO2和high-k材料的MOS晶体管器件特性进行了模拟比较,成功地验证了所加high-k材料MOS器件模型的正确性。改进后的PISCES-II程序,可以方便地对以各种high-k材料为栅绝缘层的器件性能进行模拟。     

Windows设备驱动程序与开发工具

高档仪器逐渐采用Windows操作系统，使得设备驱动程序成为仪器开发中的重要内容。随着Windows的发展，设备驱动程序有着不同的体系结构。文中总结驱动程序的发展过程，介绍当前较常用的几种驱动程序开发工具，并分析比较它们的优缺点。     

128×128元IRCCD成像技术

研制成功了１２８×１２８元ＰｔｓｉＩＲＣＣＤ，获得了清晰的室温目标热像。文章叙述了该摄像机驱动逻辑电路的设计、驱动方式的研究和视频信号、数字信号的处理。     

LSI/VLSI中缺陷、杂质与器件性能的关系

结合器件工艺的失效分析,评述了硅中缺陷和氧、碳、金属杂质与器件性能、器件工艺之间的相互关系。指出:杂质和缺陷对器件的性能、成品率和可靠性有严重的影响,尤其经金属杂质缀饰的缺陷对器件的危害更大。对硅中某些杂质和缺陷的最新研究进展作了介绍。