The T Cell Repertoires from Nickel Sensitized Joint Implant Failure Patients

Nickel (Ni²⁺) is one of the most common allergens, affecting around 10–15% of the general population. As the demand for orthopedic implant surgery rises, the number of surgical revisions due to joint implant failure also increases. There is evidence that some patients develop joint failure due to an immune response to a component of the implant, and we have found that Ni²⁺ is an especially important cause. Hence, understanding the mechanisms by which Ni²⁺ allergy induces joint implant failure becomes a critical research question. The structural basis of Ni²⁺ activation of pathogenic T cells is still not clear. The purpose of this study was to characterize Ni²⁺-reactive T cell repertoires derived from the peripheral blood of joint failure patients due to Ni²⁺ sensitization using single-cell sequencing techniques. We stimulated the proliferation of Ni²⁺ -reactive T cells from two implant failure patients in vitro, and sorted them for single-cell VDJ sequencing (10× genomics). We identified 2650 productive V-J spanning pairs. Both TCR α chains and β chains were enriched. TRBV18 usage is the highest in the P7 CD4+ population (18.1%), and TRBV5-1 usage is the highest in the P7 CD8+ population (12.1%). TRBV19 and TRBV20-1 segments are present in a high percentage of both P7 and P9 sequenced T cells. Remarkably, the alpha and beta chain combination of TRAV41-TRBV18 accounts for 13.5% of the CD4+ population of P7 patient. Compared to current Ni specific T cell repertoire studies of contact dermatitis, the Vα and Vβ usages of these joint implant failure patients were different. This could be due to the different availability of self-peptides in these two different tissues. However, TRBV19 (Vβ17) was among frequently used TCR β chains, which are common in previous reports. This implies that some pathogenic T cells could be similar in Ni²⁺ hypersensitivities in skin and joints. The alignment of the TCR CDR3β sequences showed a conserved glutamic acid (Glu) that could potentially interact with Ni²⁺. The study of these Ni²⁺ specific TCRs may shed light on the molecular mechanism of T cell activation by low molecular weight chemical haptens.     

TCR+FC型无功补偿技术在矿井提升系统中的应用

提升机是采矿企业广泛使用的大功率、高耗能的生产设备之一,矿井提升系统普遍采用电力电子器件构成的整流装置对其直流电机进行供电和控制。提升机在采矿过程中需要频繁地启动、停机,对电网的无功冲击和谐波污染使供电系统的安全稳定性受到严重影响。本文以国内某铅锌矿盲主井提升系统为研究对象,提出晶闸管控制电抗器(Thyristor Controlled Reactors,TCR)和固定电容器组(Fixed Capacitors,FC)相结合的无功补偿与谐波治理方法。针对提升机运行过程的特殊性和复杂性,给出无功补偿装置的具体电路设计、参数计算等的方法。提出的无功补偿与谐波治理技术对无功补偿装置的工程研究和开发提供一定的参考和指导,对提高电网的供电质量,保障矿井安全、稳定、高效生产具有十分重要的意义。     

Substrate effect on the temperature coefficient of resistance of La0.7Ca0.3MnO3 thin films prepared by metal organic deposition

Epitaxial La_0.7Ca_0.3MnO₃ (LCMO) thin films were successfully prepared by the metal-organic deposition process on various (001) single-crystal substrates: MgO, LaAlO₃ (LAO), SrTiO₃ (STO), and (LaAlO₃)_0.3-(SrAlTaO₆)_0.7 (LSAT). The crystallinity and the epitaxial growth of the LCMO films were characterized by X-ray diffraction (θ − 2θ scans and pole-figure analysis). The temperature dependence of the resistance of the LCMO/LSAT, LCMO/STO and LCMO/LAO films exhibit typical characteristics with a transition from the paramagnetic-insulator state to the ferromagnetic-metallic state at a temperature peak (T _p ) ranging from 258 to 270 K. However, the LCMO/MgO films exhibited a semiconducting behavior without any transition. Based on the R(T) measurement, we calculated the temperature coefficient of resistance (TCR) for a bolometric application and we obtained 22%/K, 10.2%/K and 27.5%/K for the film grown on the LSAT, STO and LAO substrates, respectively. This difference in the TCR properties is related to the strain induced by the lattice mismatch between LCMO and the different substrates.     

基于联合试验装置的TCR阀高电压试验方式损耗分析

详尽分析了晶闸管控制电抗器(Thyristor Controlled Reactor,TCR)阀高电压试验方式的电路拓扑与工作原理,采用对损耗分类的方法对TCR阀高电压试验方式下各类损耗进行了详细定义,并给出了各类损耗的计算公式.在此基础上,结合高电压试验方式中TCR阀的工作时序分析了试品阀开通1次的总能量损耗及辅助阀开通1次的总能量损耗.针对同一算例的损耗分析结果与EMTDC仿真结果比较表明,在TCR阀高电压试验方式下该损耗分析方法可给出比PSCAD/EMTDC仿真更准确、更全面的结果.     

基于电子技术的动态补偿及谐波滤波技术

介绍了静止型无功补偿及谐波滤波系统中的电力电子、集成电路芯片的技术特点、性能和主要定理图及其应用。     

静止无功补偿装置在输电系统中的应用

阐述了静止无功补偿装置（SVC）对改善电网枢纽点的电压控制;提高静态和暂态稳定性,增加输电能力;抑制系统暂时（工频）过电压;增加阻尼,抑制低频和次同步振荡,提高输电功率;改善直流换流站动态无功补偿性能等功能,以及在国内外高压输电系统中的应用情况,并给出了应用实例.我国电网正处在快速发展阶段,随着输电系统SVC技术国产化的成功,SVC在国内电网中的应用会有广阔前景.     

南阳电力配电自动化及通信系统的发展

文章简要介绍了配电自动化系统的发展历史、构成及功能。结合南阳电力配电自动化及通信配套工程的经验，着重讨论了市级配电网自动化建设的思路、自动化终端的配置原则、系统信息采集处理流程以及光纤自愈环通道的建设。对配调中心、变电站、开闭所、环网柜、柱上开关配置的自动化终端工作原理、技术指标进行了论述。     

天钢集团中板厂SVC动态无功补偿和谐波滤波系统

天津钢铁集团中板厂的负载为冲击性交-交变频机,交-交变频机的谐波除了特征谐波外,还有大量旁频。电网中谐波电流大,功率因数低,电压波动超标。SVC系统为FC TCR系统,通过测试负载电流和普通直流机负载电流,分析频率特性,得出交交变频机的谐波滤波可以按照直流机的滤波装置来设计,同时TCR本身产生的谐波必须予以考虑。     

SVC及其TCR电抗器的设计

介绍了SVC的基本要求和工作原理,分析了TCR电抗器的作用及工作特性,着重分析了TCR电抗器谐波电流下的损耗计算及温升校验方法,对干式空心TCR电抗器的设计计算、制造及试验有一定的指导意义.     

基于三维有限元模型的微测辐射热计TCR及电学性能研究

微测辐射热计结构的电阻温度系数(TCR)及其电阻值对非致冷红外焦平面探测器的性能有极大影响.基于精确的微测辐射热计三雏模型,采用热电偶合有限元方法,分析了其电学特性,针对所建立模型,加载0.5～10 μA的直流偏置电流,得到各偏置下的温度及电势相应特性,并由此获取了不同温度下结构的电阻值,进而推导出一定温度内整个模型的TCR,从而为后端读出电路的设计提供参考.最后对实际制备的器件进行测试,验证了该方法的可靠性.