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排序方式: 共有9035条查询结果,搜索用时 203 毫秒
1.
采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。 相似文献
2.
Fundamental Evaluation of Power Supply and Rectifiers for Wireless Power Transfer Using Magnetic Resonant Coupling
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This paper provides a fundamental analysis of a power supply and rectifiers for wireless power transfer using magnetic resonant coupling (MRC). MRC enables efficient wireless power transfer over middle‐range transfer distances. MRC for wireless power transfer should operate at a high frequency in the industry science medical band, such as 13.56 MHz, because the size of the transfer device decreases at higher transfer frequencies. Therefore, the output frequency of the power supply on the transmitting side should be 13.56 MHz. In addition, the rectifier on the receiving side is operated at a high frequency. This paper focuses on the reflected power in the power supply and rectifiers. Thus, the parametric design method is clarified for the power supply, including a low‐pass filter to match the output, the impedance of the power supply with the characteristic impedance of the transmission line. In addition, the effects on the rectifiers of silicon carbide and gallium nitride diodes are confirmed by performing an experiment and a loss analysis. 相似文献
3.
Ting Gang Zhu Uttiya Chowdhury Michael M. Wong Jonathan C. Denyszyn Russell D. Dupuis 《Journal of Electronic Materials》2002,31(5):406-410
In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky
rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers
grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5
V at 100 A/cm2 are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage
in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm2, and a forward-voltage drop of 3.5 V at a current density of 100 A/cm2. It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC
substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge
terminations in mesageometry GaN Schottky rectifiers has also been studied. 相似文献
4.
结合余姚陆埠 35kV变电所的电气一、二次系统设计工作 ,论述了基于BL - 0 2的微处理机为核心的控制系统及上位管理机的综合测量、显示等管理功能。文章对控制系统的硬件构成及软件设计作了详细的研究、分析 ,并对该变电所综合自动化的应用提出优化的设想 ,力图更好的实现变配电、馈电线路等综合自动化的目标 相似文献
5.
功率因数校正技术越来越成为电源行业研究的热点。文中介绍了适用于雷达等设备的250W带功率因数校正整流电源模块的设计,分析了其中升压电感器设计、主开关管保护、控制电路消振、散热设计和表面贴装等关键技术,完成了实验研究,获得了满意的试验结果。 相似文献
6.
7.
Recently, a demand for small-capacity generators has been increasing as electric sources in small ships and automobiles or as portable electric sources driven by engines. It is desired that the structure of small-capacity generators be simple and robust, and that the generators be highly reliable, easily maintained and controlled. This paper describes an analysis of the original brushless synchronous generator without exciter. The output voltage can be adjusted in the wide range by controlling the stator dc current. To analyze the characteristics of this generator, the finite element method is applied. It is found that the results of theoretical analysis agree well with the experimental results. 相似文献
8.
Takashi Yamazaki Yoichi Takino Ryosuke Matsuoka Susumu Ito 《Electrical Engineering in Japan》1993,113(8):26-36
According to the recent analysis results of temporary ac overvoltage in the ac system connected with a frequency converter station, large-magnitude over-voltages were confirmed to occur under some special system conditions. Most of the station insulators currently used cannot withstand such overvoltages according to an evaluation based on the data obtained earlier. The necessity of tests to be done to evaluate such performance more accurately was recognized. Both power frequency and switching impulse overvoltage flashover tests were made on contaminated insulators by the method well simulating the natural wetting condition. Switching impulse flashover voltage with the waveshape having a long wavefront time of 2 ms can be well correlated with the flashover voltage characteristics of temporary ac overvoltage. Higher flashover voltage characteristics were obtained by a clean fog test method compared with those obtained by equivalent fog test method. 相似文献
9.
10.
输气干线分输站站址规划设计合理与否,直接影响到分输站至各城市门站之间输气管线总投资和未来管网系统的发展。为此,着重讨论并建立了以分输站站址、各城市门站与分输站之间管道直径、壁厚、分输站压力为设计变量,以各城市门站与分输站之间管道投资最小为目标函数的分输站站址优化数学模型。根据模型特点,采用混合离散变量复合形法与数据库技术相结合来求解分输站站址。以此站址为参考点,结合现场勘察,在参考点附近沿输气干线预选多个分输站站址,并对影响分输站建设和管理的环境因素用多目标模糊评价方法进行综合评价,以评价效果好的站址为最优分输站站址。用算例说明了分输站站址优化结果不仅与工艺参数变化有关,且与分输站所处环境因素有关。提出还应深入研究输气干线中具有多个分输站的站址优化问题。 相似文献