Boosting the photoconversion efficiency of TiO2 nanotubes using UV radiation-assisted anodization as a prospective method: An efficient photocatalyst for eliminating resistant organic pollutants

1D TiO₂ nanotube arrays (TNTs), as versatile nanostructures, have attracted a considerable amount of scientific attention, particularly in photocatalytic applications. In the present study, UV radiation-assisted anodization method with various irradiation times (30–120 min) was employed as a preferable approach to fabricating TNTs with remarkable optical property and photocatalytic activity. The results revealed that in situ irradiation not only improved the surface area (from 30.10 to 48.5 m²), but also increased the roughness factor (from 77.27 to 124.73). Furthermore, UV radiation had a significant impact on optical property and by altering elemental composition, led to a red shift in absorption edge (from 3.2 to 1.4eV). Meanwhile, voltammetric experiments showed that 120 min UV radiation during anodization was able to substantially cause a surge of the photocurrent density and the photoconversion efficiency of TNTs from 0.15 to 0.55 mA cm⁻² and from 13% to 40%, respectively. As a consequence of the improvement in optical property and photochemical features, anodic TNTs fabricated under 120 min UV radiation could increase the photocatalytic degradation of 2,4-DCP from 75% to 100%. Moreover, the kinetics study showed that all photocatalytic reactions followed zero-order kinetics which rate constant over the synthesized TNTs under 120 min UV radiation was about 5.1 times greater than that of conventionally fabricated TNTs. Likewise, the pathway of photocatalytic degradation and the proportion of reactive species in this process were assessed by scavenging tests. The results confirmed that holes (h⁺) play the main role that 53% of photocatalytic degradation occurred via both direct and indirect reactions with h⁺ species. The rest of the degradation pathways were also allocated to e⁻ and ^•O₂⁻ species by accounting for 37% and 10%, respectively.     

半绝缘衬底上Si掺杂InP的纳米孔腐蚀与电学性质研究

利用MOCVD在InP半绝缘衬底上生长N型InP,在KOH溶液中电化学腐蚀形成纳米多孔结构的。通过实验证实在半绝缘衬底上的InP纳米孔腐蚀具有可行性,并且得到了腐蚀质量较好、图形清晰、结构规整的纳米孔材料。在对其进行霍尔测试,得到了腐蚀孔对于n型InP材料表面电学性质的改变,实现了低掺杂浓度(10~(18)cm~(-3))的InP通过表面纳米孔腐蚀的方式提高载流子浓度,改善n型InP层表面电学性能。     

硬质阳极氧化制备多孔疏水膜

采用硬质阳极氧化技术在铝合金表面制备了微米多孔多级复合结构氧化膜层,研究了多孔结构膜层疏水特性。通过电子显微镜和接触角测量仪分析发现,不同孔结构参数具有不同接触角疏水特性。当获得致密、更小尺度的多级微孔结构时,可以增加表面空气在三相界面中所占的比重,在不进行低能材料修饰情况下,使其表面静态水接触角增加,最大可达到130 o,该结果可以为阳极氧化工业应用提供一定实验参考。     

确保硬质阳极氧化硬度与厚度的探讨

硬质阳极氧化能使铝及铝合金获得耐蚀,耐磨、绝缘性好,硬度高的涂层、对航空航天产品具有使用价值,但其厚度与硬度不易保证,本文着重探讨这个问题。     

镁合金表面微弧氧化法

简要介绍了国内外镁合金表面处理方法，重点介绍了微弧氧化技术的发展现状、工艺和成膜性能。通过它与普通阳极氧化技术的对比，作者认为微弧氧化是最具潜力的镁合金表面处理技术之一。     

纳米样板的制备及其精度分析

介绍了纳米样板的研究现状及制备工艺，特别对扫描探针显微镜(SPM)表面局域氧化反应工艺进行了详述；分析了原子力显微镜(AFM)探针诱导局域氧化工艺的原理及其影响参数，原理为高度局域化的电化学反应，影响参数包括探针上所施加的电压、扫描速度、探针曲率半径、相对湿度以及氧化物厚度等；用该方法分别制备了5条栅线和7条栅线的一维纳米结构样板，并对7条栅线的纳米结构样板的精度和不确定度影响因素进行了分析。     

新型冲击速度传感器

根据冲击波物理实验的需要，利用改进的阳极化工艺，在铝杆半球形的表面均匀地生成厚约5．5μm的Al2O3电介质膜，其直流绝缘强度可达250V，1min，低冲击压力作用下的电脉冲前沿约50ns。满足了冲击压缩实验对传感器高精度、高可靠性、高度可重复和大批量的要求。     

TiO2纳米管薄膜的屈曲图样（英文）

采用基体应变测试方法研究TiO2纳米管薄膜的屈曲图样。结果表明：TiO2纳米管薄膜室温样、250℃退火样和 400℃退火样的屈曲应变依次为2.5%、8.9%和7.8%,说明退火改善了纳米管薄膜/Ti 基体界面状况。从 SEM 观察可以看出,TiO2纳米管薄膜室温样、250℃退火样和400℃退火样的临界屈曲应力分别为180.4、410.2 和 619.5MPa;从 AFM 观察可以看出,TiO2纳米管薄膜 250℃退火样的临界屈曲应力为470.2MPa,两者吻合得很好。采用AFM计算250℃退火样的真实应力和能量释放率分别为840.3MPa和77.2J/m2,此结果与从裂纹角度计算出的250℃退火样的能量释放率102.6 J/m2吻合得很好。