全文获取类型
收费全文 | 1838篇 |
免费 | 60篇 |
国内免费 | 112篇 |
专业分类
电工技术 | 21篇 |
综合类 | 74篇 |
化学工业 | 358篇 |
金属工艺 | 262篇 |
机械仪表 | 91篇 |
建筑科学 | 11篇 |
矿业工程 | 10篇 |
能源动力 | 51篇 |
轻工业 | 40篇 |
石油天然气 | 8篇 |
武器工业 | 6篇 |
无线电 | 296篇 |
一般工业技术 | 704篇 |
冶金工业 | 26篇 |
原子能技术 | 28篇 |
自动化技术 | 24篇 |
出版年
2024年 | 5篇 |
2023年 | 19篇 |
2022年 | 22篇 |
2021年 | 18篇 |
2020年 | 23篇 |
2019年 | 39篇 |
2018年 | 32篇 |
2017年 | 33篇 |
2016年 | 43篇 |
2015年 | 42篇 |
2014年 | 60篇 |
2013年 | 83篇 |
2012年 | 73篇 |
2011年 | 146篇 |
2010年 | 89篇 |
2009年 | 127篇 |
2008年 | 134篇 |
2007年 | 91篇 |
2006年 | 129篇 |
2005年 | 90篇 |
2004年 | 120篇 |
2003年 | 80篇 |
2002年 | 77篇 |
2001年 | 73篇 |
2000年 | 78篇 |
1999年 | 46篇 |
1998年 | 50篇 |
1997年 | 35篇 |
1996年 | 38篇 |
1995年 | 24篇 |
1994年 | 19篇 |
1993年 | 14篇 |
1992年 | 14篇 |
1991年 | 14篇 |
1990年 | 10篇 |
1989年 | 1篇 |
1988年 | 9篇 |
1987年 | 2篇 |
1986年 | 1篇 |
1985年 | 1篇 |
1981年 | 3篇 |
1980年 | 1篇 |
1979年 | 1篇 |
1976年 | 1篇 |
排序方式: 共有2010条查询结果,搜索用时 15 毫秒
1.
本文综术了集成电路工艺的Cu布线中Cu薄膜化学气相沉积(CVD)的研究背景,详细介绍了CVD生长Cu金属薄膜的国内外研究进展及CVD对前趋物的要求,并对前趋物的一些物理、化学性质进行了总结,最后,对薄膜沉积的计算机摸拟作了简要介绍。 相似文献
2.
3.
Olaf Kessler 《Surface & coatings technology》2006,201(7):4046-4051
For a proper use of coated tools and components excellent coating properties as well as excellent substrate properties of the coating/substrate composite are necessary. A well known example is the load support of hard steel substrates for thin wear resistant coatings. Therefore coating processes must be combined with heat treatment processes of the substrates, whereby several practical processing constraints like order and compatibility of the applied treatment procedures must be considered. The combination of CVD-coating plus laser beam hardening is an example of a post coating heat treatment. Applications may be possible for large forming tools made of high alloyed tool steels, which nowadays are usually through hardened after CVD-coating. Laser beam hardening offers the possibility, to harden only the highly loaded edges of the tools. The advantages of this combination are short process time, less distortion and compressive residual stresses in the substrate surface. CVD-coatings can endure laser beam hardening with suitable parameters. The influence of CVD TiN-coated steel substrates and laser beam hardening parameters on microstructures and properties of coating/substrate compounds have been investigated. Special attention was paid to overlapping hardening zones, which may occur at the start and end points of a laser hardened track. In summary, the combination of coating and heat treatment processes show a high potential to produce coating/substrate compounds with excellent coating properties as well as excellent substrate properties. 相似文献
4.
Porous alumina films can be found in a wide variety of materials, including filters, thermal insulation components, dielectrics, biomedical and catalyst supports, coatings and adsorbents. Production methods for these films are as equally diverse as their applications. In this work, a hybrid process based upon chemical vapor deposition and gas-to-particle conversion is presented as an alternative technique for producing porous alumina films, with the main advantages of solvent-free, low substrate-temperature operation. In this process, nanoparticles were produced in the vapor phase by reaction of aluminum acetylacetonate in the presence of oxygen. Downstream of this reaction zone, these nanoparticles were collected via thermophoresis onto a cooled substrate, forming a porous film. Some deposited films were subjected to post-processing in the form of annealing in air. Fourier-transform infrared spectra and X-ray energy-dispersive spectroscopy analysis confirmed the production of alumina at processing temperatures above 973 K. X-Ray diffraction revealed that the films were amorphous. Film thickness, ranging from 30 to 250 μm, and the average deposition rate were determined from scanning electron microscopy results. From transmission electron microscopy, the average primary particle size was determined to be approximately 18 nm and the formation of nanoparticle aggregates was evident. Annealing of the films at temperatures ranging from 523 to 1173 K in the presence of air did not have an effect on particle size. The specific surface area of the powder composing the films ranged from 10 to 185 m2 g−1, as determined from nitrogen gas adsorption by the Brunauer–Emmett–Teller method. 相似文献
5.
立方氮化硼(cBN)是一种具有广泛应用价值的Ⅲ-Ⅴ族二元化合物,其优异性质可与金刚石相比拟或胜之.立方氮化硼的制备与性能研究是近二十年来材料领域关注的焦点之一.我们用热丝辅助ECR CVD方法制备了cBN薄膜,并初步探讨了热丝对cBN形成的作用.偏压并不是cBN形成的唯一主要条件,活性粒子也有非常关键的作用. 相似文献
6.
7.
Monocrystalline 6H-SiC thin films have been epitaxially grown on off-axis 6H-SiC {0001} substrates in the temperature range
of 1623–1873 K via chemical vapor deposition. The growth rate was a strong function of the growth temperature and the reactant
gas concentration. The activation energies for growth were 64 kJ/mole and 55 kJ/mole for the (0001) Si face and the (0001)
C face, respectively. The concentration of growth pits in the films increased as a function of decreasing deposition temperature,
increasing concentration of reactant gases and increasing off-axis orientation. Beta-SiC islands were also observed in the
epilayers when the (SiH4 + C2H4)/H2 ratio was ≥2.5:3000. 相似文献
8.
S. P. Ashburn M. C. Öztürk J. J. Wortman G. Harris J. Honeycutt D. M. Maher 《Journal of Electronic Materials》1992,21(1):81-86
Titanium and cobalt germanides have been formed on Si (100) substrates using rapid thermal processing. Germanium was deposited
by rapid thermal chemical vapor deposition prior to metal evaporation. Solid phase reactions were then performed using rapid
thermal annealing in either Ar or N2 ambients. Germanide formation has been found to occur in a manner similar to the formation of corresponding silicides. The
sheet resistance was found to be dependent on annealing ambient (Ar or N2) for titanium germanide formation, but not for cobalt germanide formation. The resistivities of titanium and cobalt germanides
were found to be 20 μΩ-cm and 35.3μΩ-cm, corresponding to TiGe2 and Co2Ge, respectively. During solid phase reactions of Ti with Ge, we have found that the Ti6Ge5 phase forms prior to TiGe2. The TiGe2 phase was found to form approximately at 800° C. Cobalt germanide formation was found to occur at relatively low temperatures
(425° C); however, the stability of the material is poor at elevated temperatures. 相似文献
9.
本文用不热形变栅状直丝化学气相沉积(CVD)法生长金刚石膜,在Si及WC-Co硬质合金衬底上金刚石膜晶面显露规律随衬底温度和甲烷浓度而异,经适当表面处理及选择合适的工艺条件,当生长初期衬底上就呈现出良好晶形的沉积膜,衬底与膜之间的粘结力能得到提高。Raman谱分析表明此膜仅具有特征金刚石1332cm ̄(-1)峰,通过SEM观察揭示出盒刚石膜可在表面、侧面及棱上生长,并与衬底有良好的联结。 相似文献
10.
甄汉生 《真空科学与技术学报》1993,(2)
微波电子回旋共振等离子体是淀积薄膜、微细加工和材料表面改性的一种重要手段。由于这种等离子体电离水平高,化学活性好,可以用来实现基片上薄膜的室温化学气相淀积和反应离子刻蚀,因此对于微电子学、光电子学和薄膜传感器件的发展,这种等离子体会具有重要的意义。此外,采用微波电子回旋共振等离子体原理,没有灯丝的离子源可以提高离子源的使用寿命,可以增加离子束的束流密度。可以确信,微波电子回旋共振等离子体的发展,将把离子源技术提高到一个新的水平。显然,这必将对材料表面改性工艺,包括离子注入掺杂等工艺的发展发挥作用。自从1985年以来,为了得到大容积等离子体而发展了微波电子回旋共振多磁极等离子体,这些技术在薄膜技术、微细加工以及材料表面改性中的应用前景是乐观的。我们将在本文中,介绍微波电子回旋共振等离子体的原理及其应用。 相似文献