Selective Coating of SnS on the Bio‐Inspired Moth‐Eye Patterned PEDOT:PSS Polymer Films

A new strategy for the selective coating of tin sulfide (SnS) on the surface of moth‐eye patterned (MEP) conducting polymer film is studied by considering the optical properties of the antireflective moth‐eye pattern and flexibility of polymer films. The semiconductor SnS is selectively coated on the surface of MEP microdomes of poly(3,4‐ethylenedioxythiophene) poly(styrene‐sulfonate) (PEDOT:PSS) film. The SnS coated MEP film is obtained by using pore selectively SnS thin layer functionalized polystyrene honeycomb‐patterned porous (HCP) film as a template. Aqueous PEDOT:PSS solution is poured on the SnS functionalized HCP films and detached for the fabrication of SnS coated MEP films. The films show a satisfactory photo‐responsive property under solar stimulated light illumination due to the antireflective MEP structure of PEDOT film and homogenous SnS coating on the surface of the conducting polymer.     

Selective area epitaxy of CdTe

We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.     

Elimination of dislocations in heteroepitaxial MBE and RTCVD Ge x Si1-x grown on patterned Si substrates

We have grown Ge _x Si_1-x (0 <x < 0.20,1000–3000Å thick) on small growth areas etched in the Si substrate. Layers were grown using both molecular beam epitaxy (MBE) at 550° C and rapid thermal chemical vapor deposition (RTCVD) at 900° C. Electron beam induced current images (EBIC) (as well as defect etches and transmission electron microscopy) show that 2800Å-thick, MBE Ge_0.19Si_0.81 on 70-μm-wide mesas have zerothreading and nearly zero misfit dislocations. The Ge_0.19Si{0.81} grown on unpatterned, large areas is heavily dislocated. It is also evident from the images that heterogeneous nucleation of misfit dislocations is dominant in this composition range. 1000Å-thick, RTCVD Ge_0.14Si_0.86 films deposited on 70 μm-wide mesas are also nearly dislocation-free as shown by EBIC, whereas unpatterned areas are more heavily dislocated. Thus, despite the high growth temperatures, only heterogeneous nucleation of misfit dislocations occurs and patterning is still effective. Photoluminescence spectra from arrays of GeSi on Si mesas show that even when the interface dislocation density on the mesas is high, growth on small areas results in a lower dislocation density than growth on large areas.     

Formation mechanism of subtrenches on cone-shaped patterned sapphire substrate

In this paper, the cone-shaped patterned sapphire substrates (PSS) were etched by an inductively couple plasma with BCl 3 as the reacting gas. The influence of the operating pressure and the RF bias power on subtrenches of the cone-shaped PSS and the formation mechanism of subtrenches were investigated. The profiles of patterns were characterized by FESEM (field emission scanning electron microscope). It showed that the subtrench size varied with the operating pressure and the RF bias power. As the operatin...     

Self-assembled patterned CoFe2O4-SrRuO3 electrodes: Enhanced functional properties by polar nano-regions reorientation

Epitaxial CoFe₂O₄ (CFO) and SrRuO₃ (SRO) nanopillar heterostructures were deposited on Pb(Mg_1/3Nb_2/3)_0.70Ti_0.30O₃ (PMN-30PT) single crystal substrates by switch pulsed laser deposition (SPLD). Since the CFO nanopillars are insulating, and the SRO matrix conductive, this self-assembled nanopillar heterostructure served as a patterned electrode on PMN-PT, which then enhances the dielectric and piezoelectric constant of the substrate. Cross-sectional electron microscopy images revealed the formation of a nanopillar heterostructure layer with CFO nanopillars within a SRO matrix. AFM and XRD revealed good topography and epitaxy, indicating a high quality SRO-CFO self-assembled nanopillar structure. Using a SRO-CFO thin film patterned electrode, PMN-PT was found to have a notably higher (30%) dielectric constant with increasing electric field and enhanced transverse broadening in reciprocal spacing mapping (RSM) scans.     

Surface Growth of Boron Nitride Nanotubes through Boron Source Design

Boron nitride nanotubes (BNNTs) are promising materials due to their unique physical and chemical properties. Fabrication technologies based on gas-phase reactions reduce the control and collection efficiency of BNNTs due to reactant and product dispersion within the reaction vessel. A surface growth method that allows for controllable growth of BNNTs in certain regions using a preburied boron source is introduced. This work leverages the high solubility of boron in metals to create a boronized layer on the surface which serves as the boron source to confine the growth of BNNTs. Dense and uniform BNNTs are obtained after loading catalysts onto the boronized substrate and annealing under ammonia. Confirmatory experiments demonstrate that the boride layer provides boron for BNNTs growth. Furthermore, the patterned growth of BNNTs is realized by patterning the boronizing region, demonstrating the controllability of this method. In addition, the Ni substrate with BNNTs growth exhibits better performance in corrosion resistance and thermal conductivity than pure Ni. This study introduces an alternative strategy for the surface growth of BNNTs based on boron source design, which offers new possibilities for the controllable preparation of BNNTs for various applications.