Investigation on thermal conductivity and mechanical properties of Si3N4 ceramics via one-step sintering

High thermal conductivity Si₃N₄ ceramics were fabricated using a one-step method consisting of reaction-bonded Si₃N₄ (RBSN) and post-sintering. The influence of Si content on nitridation rate, β/(α+β) phase rate, thermal conductivity and mechanical properties was investigated in this work. It is of special interest to note that the thermal conductivity showed a tendency to increase first and then decrease with increasing Si content. This experimental result shows that the optimal thermal conductivity and fracture toughness were obtained to be 66 W (m K)^-1 and 12.0 MPa m^1/2, respectively. As a comparison, the nitridation rate and β/(α+β) phase rate in a static pressure nitriding system, i.e., 97% (MS10), 97% (MS15), 97% (MS20) and 8.3% (MS10), 8.3% (MS15), 8.9% (MS20), respectively, have obvious advantages over those in a flowing nitriding system, i.e., 91% (MS10), 91% (MS15), 93% (MS20) and 3.1% (MS10), 3.3% (MS15), 3.3% (MS20), respectively. Moreover, high lattice integrity of the β-Si₃N₄ phase was observed, which can effectively confine O atoms into the β-Si₃N₄ lattice using MgO as a sintering additive. This result indicates that one-step sintering can provide a new route to prepare Si₃N₄ ceramics with a good combination of thermal conductivity and mechanical properties.     

用于厚屏蔽小探测器的蒙特卡罗模拟减方差方法研究

反应堆屏蔽计算中经常出现厚屏蔽、小探测器问题，常规蒙特卡罗方法难以有效解决。基于自动重要抽样（AIS）方法，本文提出了小探测器自动重要抽样(SDAIS)方法，并针对小探测器问题，优化了AIS方法的虚粒子赌分裂算法。该方法在自主开发的蒙特卡罗屏蔽程序MCShield上进行了实现。使用NUREG/CR-6115 PWR基准题验证该方法的正确性和计算效率。结果表明，SDAIS方法可有效地解决厚屏蔽小探测器问题，相比AIS方法及传统的重要性方法，计算效率提升1~2个量级。     

Multi-discharge EDM coring of single crystal SiC ingot by electrostatic induction feeding method

A new technique of EDM coring of single crystal silicon carbide (SiC) ingot was proposed in this paper. Currently single crystal SiC devices are still of high cost due to the high cost of bulk crystal SiC material and the difficulty in the fabrication process of SiC. In the manufacturing process of SiC ingot/wafer, localized cracks or defects occasionally occur due to thermal or mechanical causes resulted from fabrication processes which may waste the whole piece of material. To save the part of ingot without defects and maximize the material utilization, the authors proposed EDM coring method to cut out a no defect ingot from a larger diameter ingot which has localized defects. A special experimental setup was developed for EDM coring of SiC ingot in this study and its feasibility and machining performance were investigated. Meanwhile, in order to improve the machining rate, a novel multi-discharge EDM coring method by electrostatic induction feeding was established, which can realize multiple discharges in single pulse duration. Experimental results make it clear that EDM coring of SiC ingot can be carried out stably using the developed experimental setup. Taking advantage of the newly developed multi-discharge EDM method, both the machining speed and surface integrity can be improved.     

Deposition,opto-electronic and structural characterization of polymorphous silicon thin films to be applied in a solar cell structure

In this study we analyze the optoelectronic properties and structural characterization of hydrogenated polymorphous silicon thin films as a function of the deposition parameters. The films were grown by plasma enhanced chemical vapor deposition (PECVD) using a gas mixture of argon (Ar), hydrogen (H₂) and dichlorosilane (SiH₂Cl₂). High-resolution transmission electron microscopy images and Raman measurements confirmed the existence of very different internal structures (crystalline fractions from 12% to 54%) depending on the growth parameters. Variations of as much as one order of magnitude were observed in both the photoconductivity and effective absorption coefficient between the samples deposited with different dichlorosilane/hydrogen flow rate ratios. The optical and transport properties of these films depend strongly on their structural characteristics, in particular the average size and densities of silicon nanocrystals embedded in the amorphous silicon matrix. From these results we propose an intrinsic polymorphous silicon bandgap grading thin film to be applied in a p–i–n junction solar cell structure. The different parts of the solar cell structure were proposed based on the experimental optoelectronic properties of the pm-Si:H thin films studied in this work.     

Rectangular Section Control Technology for Silicon Steel Rolling

Rectangular section control technology(RSCT)was introduced to achieve high-precision profile control during silicon steel rolling.The RSCT principle and method were designed,and the whole RSCT control strategy was developed.Specifically,RSCT included roll contour design,rolling technology optimization,and control strategy development,aiming at both hot strip mills(HSMs)and cold strip mills(CSMs).Firstly,through the high-performance variable crown(HVC)work roll optimization design in the upper-stream stands and the limited shifting technology for schedule-free rolling in the downstream stands of HSMs,a hot strip with a stable crown and limited wedge,local spot,and single wave was obtained,which was suitable for cold rolling.Secondly,an approximately rectangular section was obtained by edge varying contact(EVC)work roll contour design,edge-drop setting control,and closed loop control in the upper-stream stands of CSMs.Moreover,complex-mode flatness control was realized by coordinating multiple shape-control methods in the downstream stands of CSMs.In addition,the RSCT approach was applied in several silicon-steel production plants,where an outstanding performance and remarkable economic benefits were observed.     

开关磁阻直线电机的设计及其推力优化

设计了一种开关磁阻直线电机,使用JMAG软件对其进行了仿真和优化。进行了推力公式的推导,研究了导通顺序和初始位置对电机推力的影响,并分析了三种典型情况的磁力线分布。对电机的定子和动子的齿部和轭部高度、宽度及铁耗进行仿真优化,得出了最优参数。将有取向硅钢应用于该电机,研究了推力与轧制角的关系,并与使用普通硅钢的开关磁阻直线电机进行了对比,推力有一定提升。提出在动子齿部开切向槽的方案,结果表明,开切向槽对推力的影响较小,并能显著减小推力波动。     

High-efficiency Silicon Solar Cells: A Review

Over the past few decades, crystalline silicon solar cells have been extensively studied due to their high efficiency, high reliability, and low cost. In addition, these types of cells lead the industry and account for more than half of the market. For the foreseeable future, Si will still be a critical material for photovoltaic devices in the solar cell industry. In this paper, we discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells.     

Estimation of power density in IMPATT using different materials

ABSTRACT

The RF output power dissipated per unit area is calculated using Runge-Kutta method for the high-moderate-moderate-high (n⁺-n-p-p⁺) doping profile of double drift region (DDR)-based impact avalanche transit time (IMPATT) diode by taking different substrate at Ka band. Those substrates are silicon, gallium arsenide, germanium, wurtzite gallium nitride, indium phosphide and 4H-silicon carbide. A comparative study regarding power dissipation ability by the IMPATT using different material is being presented thereby modelling the DDR IMPATT diode in a one-dimensional structure. The IMPATT based on 4H-SiC element has highest power density in the order of 10¹⁰ Wm^?2 and the Si-based counterpart has lowest power density of order 10⁶ Wm^?2 throughout the Ka band. So, 4H-SiC-based IMPATT should be preferable over others for the power density preference based application. This result will be helpful to estimate the power density of the IMPATT for any doping profile and to select the proper element for the optimum design of the IMPATT as far as power density is concerned in the Ka band. Also, we have focused on variation of power density with different junction temperatures and modelled the heat sink with analysis of thermal resistances.     

一种改进型自适应加权模糊均值滤波算法

针对原有的自适应加权模糊均值AWFM滤波器对局部噪声幅度估计不足的缺点。提出了一种新的改进型自适应加权模糊均值MAWFM滤波算法。该算法采用了一种新的模糊检测方法，可以同时检测各个像素点的正负向噪声幅度，从而能够建立一种新的自适应的模糊信号空间，以适应噪声在各个图像局部的变化。实验结果表明，MAWFM滤波器比以前的AWFM滤波器及传统的中值滤波器均有较优越的性能。