具有复合埋层的新型SIMON材料的制备

采用氮氧共注入方法制备了新型的 SIMON(separation by implanted oxygen and nitrogen) SOI材料 .采用不同的制备方法分别制作出样品并进行了结构测试和分析 ,发现 SIMON材料的结构和质量对注入条件和退火工艺非常敏感 .并对各种氮氧复合注入技术做了分析和比较 ,发现氮氧分次注入可以得到更好的结构和性能     

A computationally efficient model of single electron transistor for analog IC simulation

A compact analytical single electron transistor (SET) model is proposed. This model is based on the “orthodox theory” of single electron tunneling, valid for unlimited range of drain to source voltage, valid for single or multi-gate, symmetric or asymmetric devices and takes the background charge effect into account. This model is computationally efficient in comparison with existing models. SET characteristics produced by the proposed model have been verified against Monte Carlo simulator SIMON and show good agreement. This model has been implemented in HSPICE simulator through its Verilog-A interface to enable simulation with conventional MOS devices and single electron inverter has been simulated and verified with SIMON results. At high operating temperature, the thermionic current is taken into account.     

Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator

In this paper, we present a multi-island single-electron transistor (MISET) model based on the orthodox theory and solving the master equation. Using SIMON simulator, we investigate the electrical characteristics of single-electron transistors (SETs) based on multiple islands and show the temperature dependence of the Coulomb oscillation of the SET with one to six islands as a function of gate voltage V_g in the temperature range from T=5 to 50 K. Values of current tend to increase proportionally with temperature. For a high drain voltage, the MISET behaved as a single-island device. This is probably because the multiple islands were electrically enlarged and merged into a single island owing to the high applied drain voltage. Finally, we compare the advantages of MISET face to single-island SETs with identical dimensions of islands.     

基于SIMON仿真软件的单电子存储器分析

介绍了目前国际上比较流行的单电子器件仿真软件SIMON的工作原理,并且以单电子环形存储器单元电路为例,利用SIMON软件对其功能和性能进行了仿真分析,同时,还仿真了温度和随机背景电荷对单电子环形存储器单元电路的影响。研究表明,单电子环形存储器单元电路利用量子点环状电路结构形式,由外接输入电压控制各岛上的电荷,能够得到存储器的"0"和"1"状态。并且该电路对温度和背景电荷极为敏感,在温度为0K和零背景电荷条件下电路能够正常工作,但是当温度和背景电荷发生微小变化,电路的输出状态将会受到破坏。     

注氮工艺对SOI材料抗辐照性能的影响

分别采用一步和分步注入的工艺制备了氧氮共注形成SOI(SIMON)材料，并对退火后的材料进行了二次离子质谱（SIMS）分析，结果发现退火之后氮原子大多数聚集在SiO2/Si界面处．为了分析材料的抗辐照加固效果，分别在不同方法制作的SIMON材料上制作了nMOS场效应晶体管，并测试了晶体管辐射前后的转移特性．实验结果表明，注氮工艺对SOI材料的抗辐照性能有显著的影响．     

N~+、O~+共注入形成SOI绝缘埋层的计算机模拟

将不同能量和注量的N+和O+离子依次注入于<100>硅片并高温退火,形成具有SiO2/SiOxNy/Si3N4埋层的SOI结构。本文使用在TRIM的基础上发展起来的IRIS模拟程序,并对IRIS模型进行了改进,对N+、O+离子共注入形成的SIMON结构进行了计算机模拟,并与实验制作的样品所做截面透射电镜(TEM)测试结果进行了比较,发现模拟结果与实验所得数据吻合。     

简化SIMON类算法的立方测试与分析*

针对轻量级分组密码算法SIMON的安全性分析,对SIMON32/64算法抵抗立方攻击的能力和算法内部结构对密钥比特的混淆和扩散性能力进行了评估。基于SIMON类算法的密钥编排特点和轮函数结构,结合立方分析的基本思想,利用FPGA测试平台设计了一个SIMON32/64的立方攻击和密钥中比特检测算法。测试结果表明：在立方变元取6维至24维时,对于7轮SIMON32/64算法,通过立方攻击能够直接恢复47比特密钥,攻击时间复杂度约为218.08;对于8轮SIMON32/64算法,能够直接恢复39比特密钥,攻击时间复杂度约为225.00。对于10轮,11轮SIMON32/64算法,通过立方测试均能够捕获到密钥中比特。     

基于深度学习的SIMON3264安全性分析

轻量级分组密码的安全性分析越来越倾于向自动化和智能化的方向发展.目前基于深度学习对轻量级分组密码进行安全性分析正在成为一个全新的研究热点.针对由美国国家安全局在2013年发布的一款轻量级分组密码SIMON算法,将深度学习技术应用于SIMON3264的安全性分析.分别采用前馈神经网络和卷积神经网络模拟多差分密码分析当中的单输入差分多输出差分情形,设计了应用于SIMON3264的6~9轮深度学习区分器,并比较了2种神经网络结构在不同条件下的优劣.通过对前馈神经网络和卷积神经网络的7轮深度学习区分器向前向后各扩展1轮,提出了针对9轮SIMON3264的候选密钥筛选方法.实验结果证实:采用128个选择明文对,可以成功地将65535个候选密钥筛选在675个以内.这说明基于深度学习的差分区分器相比传统差分区分器需要更少的时间复杂度和数据复杂度.     

Ciphertext-only fault analysis of the SIMON lightweight cipher

The ciphertext-only fault analysis on the SIMON cipher was proposed by injecting a random nibble fault under the random nibble fault model.After injecting faults,every faulty ciphertext could be decrypted and the statistical distribution of all intermediate states were analyzed by the attackers.On the basis of the previous distinguishers of SEI,GF,MLE,MLE-SEI,GF-SEI and GF-MLE,four novel distinguishers of GF-MAP,HW-MLE,GF-HW and HW-MAP were proposed to reduce faults.The results show that the SIMON cipher cannot resist against the ciphertext-only fault analysis.It provides an important reference for security analysis of other ciphers.     

SIMON不可能差分及零相关路径自动化搜索算法

对于分组密码,不可能差分和零相关线性分析都是很重要的分析手段.通过研究非线性组件与（AND）的性质,首先得到用于刻画SIMON轮函数差分及线性传播特性的约束式,再基于布尔可满足约束问题（SAT）,提出一种普适性不可能差分和零相关路径自动化搜索算法,并利用该算法搜索得到SIMON更多的不可能差分及零相关路径.除用于自动化搜索外,该算法还可判断特定的差分对（掩码对）是否能构成一条有效不可能差分和零相关路径.此外,基于该算法,从抵抗不可能差分攻击的角度出发,给出SIMON轮函数设计中循环移位常数的选取依据.