Nacre-Inspired,Liquid Metal-Based Ultrasensitive Electronic Skin by Spatially Regulated Cracking Strategy

The realization of liquid metal-based wearable systems will be a milestone toward high-performance, integrated electronic skin. However, despite the revolutionary progress achieved in many other components of electronic skin, liquid metal-based flexible sensors still suffer from poor sensitivity due to the insufficient resistance change of liquid metal to deformation. Herein, a nacre-inspired architecture composed of a biphasic pattern (liquid metal with Cr/Cu underlayer) as “bricks” and strain-sensitive Ag film as “mortar” is developed, which breaks the long-standing sensitivity bottleneck of liquid metal-based electronic skin. With 2 orders of magnitude of sensitivity amplification while maintaining wide (>85%) working range, for the first time, liquid metal-based strain sensors rival the state-of-art counterparts. This liquid metal composite features spatially regulated cracking behavior. On the one hand, hard Cr cells locally modulate the strain distribution, which avoids premature cut-through cracks and prolongs the defect propagation in the adjacent Ag film. On the other hand, the separated liquid metal cells prevent unfavorable continuous liquid-metal paths and create crack-free regions during strain. Demonstrated in diverse scenarios, the proposed design concept may spark more applications of ultrasensitive liquid metal-based electronic skins, and reveals a pathway for sensor development via crack engineering.     

High performance H2 sensor based on rGO-wrapped SnO2–Pd porous hollow spheres

Hydrogen (H₂) sensors based on metal oxide semiconductors (MOS) are promising for many applications such as a rocket propellant, industrial gas and the safety of storage. However, poor selectivity at low analyte concentrations, and independent response on high humidity limit the practical applications. Herein, we designed rGO-wrapped SnO₂–Pd porous hollow spheres composite (SnO₂–Pd@rGO) for high performance H₂ sensor. The porous hollow structure was from the carbon sphere template. The rGO wrapping was via self-assembly of GO on SnO₂-based spheres with subsequent thermal reduction in H₂ ambient. This sensor exhibited excellently selective H₂ sensing performances at 390 °C, linear response over a broad concentration range (0.1–1000 ppm) with recovery time of only 3 s, a high response of ～8 to 0.1 ppm H₂ in a minute, and acceptable stability under high humidity conditions (e. g. 80%). The calculated detection limit of 16.5 ppb opened up the possibility of trace H₂ monitoring. Furthermore, this sensor demonstrated certain response to H₂ at the minimum concentration of 50 ppm at 130 °C. These performances mainly benefited from the special hollow porous structure with abundant heterojunctions, the catalysis of the doped-PdO_x, the relative hydrophobic surface from rGO, and the deoxygenation after H₂ reduction.     

A review on some classes of algebraic systems

ABSTRACT

In this paper, we review some algebraic control system. Precisely, linear and bilinear systems on Euclidean spaces and invariant and linear systems on Lie groups. The fourth classes of systems have a common issue: to any class, there exists an associated subgroup. From this object, we survey the controllability property. Especially, from those coming from our contribution to the theory.     

Producing fully-lamellar microstructure for wrought beta-gamma TiAl alloys without single α-phase field

Fine-grained fully-lamellar (FL) microstructure is desired for TiAl components to serve as compressor/turbine blades and turbocharger turbine wheels. This study deals with the process and phase transformation to produce FL microstructure for Mo stabilized beta-gamma TiAl alloys without single α-phase field. Unlike the α + γ two-phased TiAl or beta-gamma TiAl with single α-phase field, the wrought multi-phase TiAl–4/6Nb–2Mo–B/Y alloys exhibit special annealing process to obtain FL microstructure. Short-term annealing at temperatures slightly above β-transus is recommended to produce the desired FL microstructure. The related mechanism is to guarantee the sufficient diffusion homogenization of β stabilizers during single β-phase annealing, and further avoid α decomposition by α → γ + β when cooling through α + β + γ phase field. The colony boundary β phase contributes to fine-grained nearly FL microstructure, by retarding the coarsening of the α phase grains.     

Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

Behaviour of Surface Defects in Wire Rod Rolling

Defects are often present in rolled products, such as wire rod. The market demand for wire rod without any defects has increased. In the final wire rod products, defects originating from steel making, casting, pre‐rolling of billets and during wire rod rolling can appear. In this work, artificial V‐shaped longitudinal surface cracks have been analysed experimentally and by means of FEM. The results indicate that the experiments and FEM calculations show the same tendency except in two cases, where instability due to fairly “round” false round bars disturbed the experiment. FE studies in combination with practical experiments are necessary in order to understand the behaviour of the material flows in the groove and to explain whether the crack will open up as a V‐shape or if it will be closed as an I‐shape.     

ZnO基薄膜晶体管的研究

ZnO是一种宽带隙的光电半导体材料,能应用于很多领域,如可用在压敏变阻器、声表面波器件、气敏元件、紫外光探测等。ZnO也可以作为有源层应用于薄膜晶体管(TFT)中。ZnO基薄膜晶体管具有以下突出优势:对于可见光部分平均具有80%以上的透射率,迁移率可以高达36cm2/V·s,开/关电流比大于106,可在较低温度(甚至室温)下制备。基于这些优点,ZnOTFT具有取代有源矩阵液晶显示器中常规a-SiTFT的趋势。同时对ZnOTFT的研究也推动了透明电子学的发展。本文阐述了ZnOTFT优越的电学性能,指出了其目前尚存在的不足,并对其发展前景进行了展望。     

指纹考勤管理软件的研究与实现

针对企、事业单位原有的考勤系统，如打卡钟、磁卡、IC卡等考勤方式存在代打卡、卡丢失等不足和缺陷的实际，结合指纹识别技术，建立一套考勤、薪资、人事管理于一体的软件系统。给出了系统的体系结构和功能实现，能使企业考勤管理更加简便快捷、客观公正。并提出了进一步的发展方向和展望。     

2.5GHz低相位噪声CMOS LC VCO的设计

用0 .35μm、一层多晶、四层金属、3.3V的标准全数字CMOS工艺设计了一个全集成的2 .5 GHz L C VCO,电路采用全差分互补负跨导结构以降低电路功耗和减少器件1/ f噪声的影响.为了减少高频噪声的影响,采用了在片L C滤波技术.可变电容采用增强型MOS可变电容,取得了2 3%的频率调节范围.采用单个16边形的对称片上螺旋电感,并在电感下加接地屏蔽层,从而减少芯片面积,优化Q值.取得了在离中心频率1MHz处- 118d Bc/ Hz的相位噪声性能.电源电压为3.3V时的功耗为4 m A.     

Fatigue crack propagation of multiple coplanar cracks with the coupled extended finite element/fast marching method

A numerical technique for modeling fatigue crack propagation of multiple coplanar cracks is presented. The proposed method couples the extended finite element method (X-FEM) [Int. J. Numer. Meth. Engng. 48 (11) (2000) 1549] to the fast marching method (FMM) [Level Set Methods & Fast Marching Methods: Evolving Interfaces in Computational Geometry, Fluid Mechanics, Computer Vision, and Materials Science, Cambridge University Press, Cambridge, UK, 1999]. The entire crack geometry, including one or more cracks, is represented by a single signed distance (level set) function. Merging of distinct cracks is handled naturally by the FMM with no collision detection or mesh reconstruction required. The FMM in conjunction with the Paris crack growth law is used to advance the crack front. In the X-FEM, a discontinuous function and the two-dimensional asymptotic crack-tip displacement fields are added to the finite element approximation to account for the crack using the notion of partition of unity [Comput. Meth. Appl. Mech. Engng. 139 (1996) 289]. This enables the domain to be modeled by a single fixed finite element mesh with no explicit meshing of the crack surfaces. In an earlier study [Engng. Fract. Mech. 70 (1) (2003) 29], the methodology, algorithm, and implementation for three-dimensional crack propagation of single cracks was introduced. In this paper, simulations for multiple planar cracks are presented, with crack merging and fatigue growth carried out without any user-intervention or remeshing.