埋地管道泄漏内封堵装置设计与研究

针对流体输送埋地管道泄漏问题,设计了一种利用管道机器人携带封堵气囊进行快速应急封堵修复的埋地管道泄漏内封堵装置。采用矩阵变换方法建立了牵引系统驱动轮过弯方程,利用MATLAB软件对过弯方程进行了验证,同时利用ADAMS软件仿真分析过弯路径与驱动轮转角对牵引系统行走速度的影响。研究结果表明:由两个串联封堵器组成的应急封堵系统可满足复杂工况下的管道泄漏封堵要求;牵引系统驱动轮在弯管内部行走时,单轮速度呈周期性变化,但三个驱动轮整体周期运动特性一致;驱动轮转角在25°~40°时,牵引系统行走速度与驱动轮转角成正比,且转角为30°时驱动效果最好。该内封堵装置的结构设计可为管道泄漏应急封堵领域装备的研发提供重要参考。     

WAVE INTERACTION WITH PERFORATED CAISSON BREAKWATERS

The reflection coefficient of perforated caissons and the total horizontal forces acting on them were experimentally and numerically analyzed and discussed when wave propagates normally. To consider the viscosity effect of fluid and nonlinear action of waves on structures, the VOF (Volume Of Fluid) method combined with the k-ε turbulence model was used to simulate the interaction between waves and structures. Governing equations were solved with the finite difference method. Through 2D experimental study in the wave flume, the empirical relationship between the reflection coefficient of perforated caissons and the main affecting factors were obtained from the experimental data using the least square method. Also the correlation between the ratio of the total horizontal force acting on perforated caisson and the force acting on solid caisson and the main affecting factors were regressed from the experimental data.     

600 A IGBT开关电路及其散热系统设计

采用IGBT开关电路，对大功率电阻带进行直流脉宽调制控制，实现了内燃机车大功率直流发电机负载实验中的负载大小的连续调节。为了避免在实验过程中IGBT器件的温度过高，采用独特的双管IGBT结构和双向强迫风冷的散热系统。实验表明该电路运行稳定、可靠。     

摩擦强度对薄膜表面形态的作用:原子力显微镜下的观察

展示了摩擦强度对聚酰亚胺薄膜表面形态的影响，原子力显微图像显示，机械摩擦会使聚酰亚胺薄膜表面上形成微沟槽，这些沟槽的表面具有丰富的表面精细构造。原子显微图像还揭示了机械摩擦可以改变被磨擦聚酰亚胺膜的表面形态。     

电算法在液压支架受力分析中的应用

建立支架受力分析的电算设计数学模型并给出程序框图     

钢缆带式输送机驱动轮的更换方法

钢缆带式输送机在长期使用过程中 ,它的驱动轮轴承以及齿轮联轴器都要磨损 ,最终导致磨损超标。为了保证设备运行安全 ,必须解决它的更换问题。针对这一问题 ,介绍了运用松驰牵引钢丝绳的方法 ,实现了不截断牵引钢丝绳进行驱动轮的整体更换 ,通过对平煤集团一矿 4个驱动轮的更换 ,证明这种方法简便易行 ,安全可靠。     

Discrimination of B–C–N nanotubes through energy-filtering electron microscopy

Various multi-walled nanotubes in the B–C–N system are thoroughly investigated using a JEOL-3100FEF high-resolution field emission transmission electron microscope operating at 300 kV and equipped with an in-column built Omega filter. Spatially-resolved B, C and N elemental maps of the nanotubes are constructed. It is realized that a wide variety of tubular arrays composed of B, C and N atoms may exist in the system. Sandwich-like BN-rich and C-rich alternating tubular shells, graphitic C layers inside and outside of pure BN shells induced either by surface contamination, or electron beam irradiation, separation of C-rich and BN-rich tubes and/or BN particles within tubular bunches may take place. One should carefully take these effects into account while analyzing nanotube physical properties, e.g., electrical or optical, rather than simply rely on electron energy loss spectra typically collected from B, C and N containing nanostructures as a whole. Striking dependence of an individual nanotube electrical conductivity on tubular shell chemistry is demonstrated using I–V curve recording in an atomic force microscope.     

Removal of As(V) Ions from Solution by Akaganeite bgr-FeO(OH) Nanocrystals

The original method is developed for producing the new inorganic sorption material of akaganeite bgr-FeO(OH). The material in question is characterized relative to arsenic contained in aqua. The possibility is established for removing arsenate ions from water by contemporary physicochemical methods.     

Nucleation of branches in elastomeric polypropylene

The formation of a crosshatched morphology during crystallization of an isotactic polypropylene with low crystallinity is studied in detail. Here, a lamella seems to grow through another nearly perpendicular lamella that was crystallized before. The crystallization was observed with in situ scanning force microscopy with a temporal resolution of 3 min per image. After crystallization the volume structure was imaged by nanotomography. A detailed scheme for the nucleation of branches is proposed.     

Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)

Epitaxial lamellar gallium selenide (GaSe) semiconductors have been grown on trench-patterned silicon (Si) substrates by molecular beam epitaxy. An intriguing star-like patterned morphology was identified by atomic force microscopy on these epilayers. This non-trivial feature can be correlated with the accumulation of stacking faults of two concurrent epitaxial domains around self-oriented triangular pits developed earlier on the Si(111) surface by the chemical etching. Crystallographic considerations show how the stars can be formed.