Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

PDC钻头水力结构优化设计研究

在PDC钻头工作过程中，钻井液对钻头体表面的冲洗、冷却和润滑是保证钻头正常工作的一个非常重要的条件。对PDC钻头而言，水力结构（主要是中心水眼和冠部水道）设计的重要性尤其突出。以前,对钻头水力系统研究只能通过实验的方法进行,研究周期长、成本高、结构调整不方便，而数值模拟的方法在几年前还不成熟，甚至静态的复杂结构流场问题基本无法解决。为此，在提出PDC钻头水力结构优化设计原则的基础上，对PDC钻头的三维流场进行了数值模拟。模拟中考虑了钻头的喷嘴布置位置、直径、数量以及切削齿对流场的影响。计算结果表明，原设计在喷嘴布置位置和喷射角度上存在不足，以此为基础进行了水力结构的优化设计。文中的研究成果成功地应用在新型钻头水力结构的设计中，研究方法为PDC钻头水力结构优化分析奠定了理论基础。     

高分辨率地震资料处理中的优化速度分析方法

速度分析是地震资料处理过程中的重要一环。速度分析的质量直接影响动静校正,继而影响叠加成像以及偏移归位。针对如何优化速度分析,提出了基于道集资料噪音衰减、道集内相位时差校正、道集优化处理以及速度拾取应用约束等过程的优化速度分析方法。该方法在实际资料处理中取得了很好的效果。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

关于后张预应力混凝土结构优化设计的几个问题

结合UP软件编程实践，本文对后张预应力混凝土结构计算程序中引入优化功能的意义进行了论述，提出了预应力筋与普通钢筋之间的最优搭配关系，优化原点概念及相关影响因素，列出了优化计算程序所应涉及的基本计算内容，并对当前后张预应力混凝土结构设计中的一些观点提出了不同意见。     

PIMS在企业生产经营中的应用

介绍PIMS在企业生产经营中的应用 ,运用PIMS可对炼油化工企业进行原油采购决策、加工保本点预算、效益预测、物流分配、整体流程优化、投资分析、瓶颈制约因素探讨、原料和产品库存管理、经济活动分析等 ,并结合生产装置特点和市场环境影响因素 ,获取最大生产经营效益。根据影子价格 ,找出提高效益的潜力 ,确定产品、中间产品或半成品合理价格 ,规范关联交易 ,增强企业市场应变能力 ,提高经济效益与管理水平。     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

蒸汽减压站自控系统的巧设计

蒸汽是石油化工装置中最重要的物料。随着石油化工工业的迅猛发展 ,蒸汽在其中扮演着越来越重要的多重角色。因此 ,对蒸汽系统的平稳控制 ,对石油化工生产装置平稳、高效地运行是至关重要的。传统的蒸汽减压站自控系统基建投资大 ,紧急情况下靠人工手动操作稳定蒸汽压力系统 ,往往造成生产的波动或大面积的停车。针对传统蒸汽减压站自控系统的弱点 ,提出蒸汽减压站自控系统的优化设计方案 ,该方案得以在大型生产装置成功应用。新方案不但节省了大量的基建投资 ,而且取得了良好的生产效益     

黄河黑山峡河段大柳树水库比小观音水库原始库容多40亿m3的作用

一级开发大柳树高坝原始库容比二级开发小观音高坝多 4 0亿m3 ,库容大带来的好处体现在 5～ 7月可多向下游增供水量 ,缓解下游河道断流 ;延长泄放清水时间 ;增加发电效益 ;满足宁蒙河段防凌要求 ;增加汛期集中泄水 ,减缓下游河道淤积萎缩 ;满足南水北调西线工程水量调节要求等。为了更好优化配置黄河水资源 ,从全局和长远利益考虑 ,应采用一级开发方案 ,修建大柳树高坝大库