Separation of Indium from Acid Sulfate-Containing Solutions by Ion Exchange with Impregnated Resins

Indium separation using ion exchange resins from acidic polymetallic and very diluted solutions are investigated. Since the selectivity of commercial ion exchange resins have proven to be too low for an effective separation from solutions with high content of other metals, Lewatit® TP 208 was impregnated with common extractants to enhance its properties. By resin impregnation with D2EHPA and Cyanex 272, not only the selective indium recovery was reached but also the resin capacity was increased approx. two times. The best loading and elution performance were shown by Cyanex 272-impregnated Lewatit® TP 208, increasing the indium purity in the eluate from 0.75 % to 85 %.     

纳米氧化铟粉体的形貌与结构研究

用湿化学法制备了纳米极氧化铟超细粉体。利用透射电子显微镜、图像分析仪研究了纳米氧化铟粉体的形貌、尺寸分布和结构特征。结果表明，氧化铟粉体呈方片状，尺寸在10-30nm，化学组分高纯，达到了纳米级粉末要求；粉体的尺寸均匀，但在不同条件下制得的粉体，其尺寸相差较大；制备得到的氧化铟超细粉体的结构为体心立方。     

Synthesis and Characterization of Heteropoly Complexes of Indium with Metal－centred Undecatungstate Ligan

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Au—9Ni—8In合金表面铟离子注入层的微观组织与性能的研究

利用透射电镜观察Au-9Ni-8In合金表面In~+注入后的微观组织,并分析有关性能的变化。研究结果表明,In~+注入使合金表层晶粒细化,晶格畸变,位错密度降低;表层组织的变化使合金的表层显微硬度提高,摩擦和磨损性能得到改善。     

CuO/SnO2-In2O3 sensor for monitoring CO concentration in a reducing atmosphere

The CO sensing property of CuO-loaded SnO₂-In₂O₃ sensor was investigated in a reducing atmosphere. The sensor response to CO for CuO/SnO₂-In₂O₃ (8/2) was much higher than that for CuO/SnO₂ in the range of 200-1000 ppm of CO concentration. Such a high sensor response of CuO/SnO₂-In₂O₃ may originate from the high dispersion of CuO playing a role as sensing site.     

基于RGD多肽掺杂聚吡咯-铟锡氧化物的仿生微电极构建及用于细胞生物学行为的电化学阻抗谱检测

构建一种基于RGD多肽分子掺杂聚吡咯膜修饰的铟锡氧化物微电极(PPy/RGD-ITO),并以此作为传感电极实现细胞生物学行为的电化学阻抗谱检测.采用光刻技术蚀刻感光干膜绝缘层制备ITO微电极;以含RGD模体的多肽分子作为吡咯电聚合唯一的掺杂阴离子,通过电化学共聚合方式在ITO微电极表面沉积PPy/RGD复合膜形成PPy/RGD-ITO微电极;原子力显微镜(AFM)、接触角测量仪和傅里叶变换红外光谱仪(FTIR)分别表征PPy/RGD复合膜的表面拓扑形貌、湿润性和组成成分;人肺癌细胞株A549铺展、粘附及增殖实验考察了PPy/RGD复合膜与细胞间的相互作用;以构建的PPy/RGD-ITO微电极作为传感电极,通过电化学阻抗谱技术对A549细胞粘附增殖行为及天然抗癌药物分子重楼皂苷I的细胞毒性进行了分析.结果显示,通过简单的电化学共聚合成功将RGD分子掺杂进PPy膜内,且PPy/RGD复合膜具有优异的表面物理性能;PPy基质膜内掺杂的RGD分子保留其生物活性,相比裸ITO电极和聚4-苯乙烯磺酸钠(PSS)掺杂的PPy膜,PPy/RGD复合膜能更好地促进A549细胞的铺展、粘附和增殖;由于PPy/RGD-ITO微电极表面A549细胞形态学变化可改变电极系统的阻抗谱特征,因此通过电化学阻抗谱技术可解析A549细胞粘附增殖行为学信息,同时可定量分析重楼皂苷I细胞毒性.因此,通过简单的电化学共聚合方法将生物活性RGD分子掺杂进PPy膜内制备出的PPy/RGD膜具有优良的生物相容性,可作为一种重要的仿生电极修饰材料用于构建电子系统和细胞生物学系统的耦合界面,未来可应用于细胞生物学行为及药物筛选研究.     

Coatings of indium tin oxide nanoparticles on various flexible polymer substrates: Influence of surface topography and oscillatory bending on electrical properties

Abstract— Coatings of indium tin oxide (ITO) nanoparticles on different flexible polymer substrates were investigated with respect to the achievable sheet resistance and their electrical behavior under oscillatory bending. As substrate materials, polyethyleneterephthalate (PET), polyethylenenaphthalate (PEN), polyetheretherketone (PEEK), and polyimide (PI) were chosen, the surface resistances on the different polymer substrates were compared as a function of annealing temperature and surface topography. The surface topography, which has a strong influence on the surface resistance, was characterized by means of a white‐light confocal (WL‐CF) microscope. On the PET substrate, which exhibits the smoothest surface, the coating of ITO nanoparticles shows the lowest sheet resistance of 2 kΩ/□ for a layer thickness of 3 μm and an annealing temperature of 200°C. Furthermore, the electrical behavior of coatings of ITO nanoparticles under oscillatory bending was investigated using a special device. These coatings show a cyclic change of the conductivity which can be explained by an alternating compression and extension of crack flanks under the applied stress. Due to the growing number of cracks with increasing number of cycles, a decrease of the conductivity is observed in the bent state as well as in the balanced state. For a small bending radii, the decrease of the conductivity is stronger due to more cracks caused by the higher tensile stresses in the layer. The electrical behavior of the coatings of the annealed ITO nanoparticles on PET films under oscillatory bending was compared with commercially available sputtered ITO coatings. The annealed coatings of ITO nanoparticles demonstrate better electrical properties under oscillatory bending than coatings of sputtered ITO. The different electrical behavior under oscillatory bending can be related to differences in crack formation.     

Indium oxide thin film based ammonia gas and ethanol vapour sensor

A sensor for ammonia gas and ethanol vapour has been fabricated using indium oxide thin film as sensing layer and indium tin oxide thin film encapsulated in poly(methyl methacrylate) (PMMA) as a miniature heater. For the fabrication of miniature heater indium tin oxide thin film was grown on special high temperature corning glass substrate by flash evaporation method. Gold was deposited on the film using thermal evaporation technique under high vacuum. The film was then annealed at 700 K for an hour. The thermocouple attached on sensing surface measures the appropriate operating temperature. The thin film gas sensor for ammonia was operated at different concentrations in the temperature range 323–493 K. At 473 K the sensitivity of the sensor was found to be saturate. The detrimental effect of humidity on ammonia sensing is removed by intermittent periodic heating of the sensor at the two temperatures 323K and 448 K, respectively. The indium oxide ethanol vapour sensor operated at fixed concentration of 400 ppm in the temperature range 293–393 K. Above 373 K, the sensor conductance was found to be saturate. With various thicknesses from 150–300 nm of indium oxide sensor there was no variation in the sensitivity measurements of ethanol vapour. The block diagram of circuits for detecting the ammonia gas and ethanol vapour has been included in this paper.     

Ultraflat indium tin oxide films prepared by ion beam sputtering

Indium tin oxide (ITO) films with a smooth surface (root-mean-square roughness; R_rms=0.40 nm) were made using a combination of the deposition conditions in the ion beam-sputtering method. Sheet resistance was 13.8 Ω/sq for a 150-nm-thick film grown at 150 °C. Oxygen was fed into the growth chamber during film growth up to 15 nm, after which, the oxygen was turned off throughout the rest of the deposition. The surface of the films became smooth with the addition of ambient oxygen but electrical resistance increased. In films grown at 150 °C with no oxygen present, a rough surface (R_rms=2.1 nm) and low sheet resistance (14.4 Ω/sq) were observed. A flat surface (R_rms=0.5 nm) with high sheet resistance (41 Ω/sq) was obtained in the films grown with ambient oxygen throughout the film growth. Surface morphology and microstructure of the films were determined by the deposition conditions at the beginning of the growth. Therefore, fabrication of ITO films with a smooth surface and high electrical conductivity was possible by combining experimental conditions.