Morphological study of thin films: Simulation and experimental insights using horizontal visibility graph

We studied the morphological nature of various thin films such as silicon carbide (SiC), diamond (C), germanium (Ge), and gallium nitride (GaN) on silicon substrate Si(100) using the pulsed laser deposition (PLD) method and Monte Carlo simulation. We, for the first time, systematically employed the visibility algorithm graph to meticulously study the morphological features of various PLD grown thin films. These thin-film morphologies are investigated using random distribution, Gaussian distribution, patterned heights, etc. The nature of the interfacial height of individual surfaces is examined by a horizontal visibility graph (HVG). It demonstrates that the continuous interfacial height of the silicon carbide, diamond, germanium, and gallium nitride films are attributed to random distribution and Gaussian distribution in thin films. However, discrete peaks are obtained in the brush and step-like morphology of germanium thin films. Further, we have experimentally verified the morphological nature of simulated silicon carbide, diamond, germanium, and gallium nitride thin films were grown on Si(100) substrate by pulsed laser deposition (PLD) at elevated temperature. Various characterization techniques have been used to study the morphological, and electrical properties which confirmed the different nature of the deposited films on the Silicon substrate. Decent hysteresis behavior has been confirmed by current-voltage (IV) measurement in all the four deposited films. The highest current has been measured for GaN at ～60 nA and the lowest current in SiC at ～30 nA level which is quite low comparing with the expected signal level (μA). The HVG technique is suitable to understand surface features of thin films which are substantially advantageous for the energy devices, detectors, optoelectronic devices operating at high temperatures.     

基于神经网络算法的井下裂缝诊断与堵漏技术

在钻井过程中，常常钻遇不同宽度的井下地层裂缝。钻遇裂缝时容易发生钻井液漏失现象，甚至发生钻井液失返现象，严重影响了安全、高效钻井。目前裂缝封堵的方法常存在封堵成功率不高、堵漏承压能力低的问题，其中一个重要的原因是对井下地层的裂缝宽度等特征认识不清。基于地层裂缝产生的岩石力学机理，确定影响裂缝宽度关键的6个力学和工程因素，并利用神经网络计算的非线性、大数据特点建立了井下地层裂缝宽度的分析模型，模型包含输入层、输出层和3个隐藏层。通过该模型诊断井下裂缝宽度，提高了计算精度，平均误差仅为2.09%，最大误差为5.88%，解决钻井现场仅凭经验判断裂缝误差较大和依靠成像测井成本较高的问题。同时根据神经网络模型诊断得到的裂缝宽度优化堵漏材料的粒径配比，提高了裂缝内的架桥封堵强度和架桥的稳定性，封堵层的承压能力达到12.8 MPa，反向承压能力达到4.5 MPa。现场堵漏试验最高憋压10 MPa，经过封堵作业后大排量循环不漏，达到了裂缝性地层高效堵漏的目的，堵漏一次成功。      

北斗三星无源定位技术

介绍了北斗双星定位系统的特点、功能、系统组成和工作原理,说明了北斗有源定位方式在应用方面的局限性。针对北斗有源定位方式不能无线电静默,和人们对具有无线电隐蔽性的卫星定位的需求,详细介绍一种北斗三星无源定位技术:包括工作原理、实现方法、定位精度分析和目前达到的定位精度。阐述了北斗三星无源定位技术的优点和应用形势。     

丙烯腈－苯乙烯共聚物水解磺化产物对泥浆的稳定作用

在实验室条件下对用丙烯腈－苯乙烯共聚物在硫酸存在下的水解磺化产物（ＨＳＡＳ）处理的泥浆性能进行了评定。ＨＳＡＳ处理的泥浆有较小的滤失性，较好的耐盐和抗高温性。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations

We have investigated the growth characteristics of n-Al_0.15Ga_0.85N:Si/GaN and the electronic properties of Au/n-Al_0.15Ga_0.85N:Si diode structures grown by metal-organic chemical vapor deposition (MOCVD) with various Si incorporations. The Al_0.15Ga_0.85N:Si layers were grown on undoped GaN/sapphire (0001) epitaxial layers in a horizontal MOCVD reactor at the reduced pressure of 300 torr. The mirrorlike surface, free of defects, such as cracks or hillocks, can be seen in the undoped Al_0.15Ga_0.85N epilayer, which was grown without any intentional flow of SiH₄. However, many cracks are observed in the n-Al_0.15Ga_0.85N:Si, which was grown with Si incorporation above 1.0 nmol/min. While Au/n-Al_0.15Ga_0.85N:Si diodes having low incorporation of Si showed retively good rectifying behavior, the samples having high Si incorporation exhibited leaky current-voltage (I-V) behavior. Particularly, the Au/n-Al_0.15Ga_0.85N:Si structure grown with Si incorporation above 1.0 nmol/min cannot be used for electrical rectification. Both added tunneling components and thermionic emission influence the current transport at the Au/n-Al_0.15Ga_0.85N:Si barrier when Si incorporation becomes higher.     

板栅模具设计中的几个问题

通过对板栅模具设计中遇到的几个实际问题的分析提出处理意见 ,从而达到科学合理地设计板栅模具。     

New developments in CdTe and CdZnTe detectors for X and γ-ray applications

There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm² with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm³ CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.     

热镀钢丝膜层的冷凝计算

分析了热镀钢丝自液池引出过程中的热传导，得出了温度分布的解析解，从而计算钢丝表面膜层达到凝固温度时的提抽高度，为结构设计及确定冷却装置的合理位置提供依据。     

回顶法灌注混凝土浆成桩工艺

探讨了回顶法灌注混凝土浆的成桩工艺，分析了影响混凝土浆灌注质量的主要因素，并给出了相应的技术参数和措施。