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Numerical simulations can play a major role in the understanding of deformation mechanisms in zinc coatings of galvanized steel sheets during forming processes. A three-dimensional finite element (FE) simulation of a thin zinc coating on a galvanized steel sheet has been performed taking the multicrystalline structure of the coating into account. Experimental characterization of the gauge length of a real in situ tensile specimen reveals 34 large flat zinc grains; the grain orientations are determined using the electron back-scatter diffraction (EBSD) technique. The geometry and orientation of the grains and the plastic deformation modes specific to hexagonal close-packed (hcp) metals as plastic slip and twinning are incorporated into the modeling using a classical crystal plasticity framework. The constraint effect of the substrate is evidenced by comparing the results to the computation of a zinc layer without substrate under the same loading conditions. Attention is then focused on, respectively, the initiation of plastic activity at the grain boundaries, the multiaxial stress state of the grains, the development of a strain gradient within the thickness.  相似文献   
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付三强  孙渝兰  苏永新 《无损检测》2006,28(10):518-520,557
围绕困扰中厚板超声波自动探伤的几个问题进行探讨。结合实际,优化板材扫查方法,阐述多晶探头的原理和特性,提出综合利用相关抗干扰法和全波数据采集法提高系统的抗干扰能力和免误报水平。该研究侧重于解决实际问题的方法和技术上的创新。  相似文献   
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The melt-growth conditions to obtain SiGe multicrystals with microscopic compositional distribution are presented. These SiGe multicrystals are useful for new solar cells whose wavelength dependence of the absorption coefficient can be freely designed. The multicrystals with wide compositional distribution from Si to Ge can be grown by a melt growth technique such as the practical casting method. In this work, it was studied as to how much the micro- and macroscopic compositional distribution in SiGe multicrystals grown from binary Si–Ge melts could be controlled by the melt composition and the cooling process. Such SiGe multicrystals with wide distribution of the composition would also have wide distribution of the absorption coefficient, and could be hopeful for new solar cell applications using the practical casting method.  相似文献   
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The growth technique and physical properties of SiGe multicrystals with microscopic compositional distribution are demonstrated for new high-efficiency solar cells in which the wavelength dependence of the absorption coefficient can be freely designed by controlling the compositional distribution in the SiGe multicrystals. This growth technique is suitable for the practical casting method, and it is made up of melt growth of SiGe multicrystals with wide and microscopic distribution of the composition from Si to Ge all over the crystals. It is studied how much widely the microscopic compositional distribution in SiGe multicrystals grown from binary Si–Ge melts can be controlled by the melt composition and the cooling process. The range of the microscopic compositional distribution becomes wider as the starting Si concentration in the growth melt becomes larger. SiGe multicrystals with various microscopic compositional distribution can be freely controlled by optimizing the melt composition and the cooling process. The wavelength dependence of the absorption coefficient of such SiGe multicrystals can also be freely designed. Using the experimentally determined absorption coefficient of a SiGe crystal with microscopic compositional distribution, the short circuit photo-current of solar cells was calculated and it is demonstrated that the short circuit photo-current can be much larger for SiGe with microscopic compositional distribution than for SiGe with uniform composition. Si thin film can be easily grown on such a SiGe multicrystal and the Si/SiGe heterostructure can be obtained. These results show that SiGe multicrystals with microscopic compositional distribution are hopeful for new high-efficiency solar cell applications by using the practical casting method.  相似文献   
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