VO2/GaAs异质结的制备及其光电特性研究

采用直流磁控溅射和后退火氧化工艺在p型GaAs单晶衬底上成功制备了n-VO_2/pGaAs异质结,研究了不同退火温度和退火时间对VO_2/GaAs异质结性能的影响,并分析其结晶取向、化学组分、膜层质量以及光电特性。结果表明,在退火时间2 h和退火温度693 K下能得到相变性能最佳的VO_2薄膜,相变前后电阻变化约2个数量级。VO_2/GaAs异质结在308 K、318 K和328 K温度下具有较好的整流特性,对应温度下的阈值跳变电压分别为6.9 V、6.6 V和6.2 V,该结果为基于VO_2相变特性的异质结光电器件的设计与应用提供了可行性。     

Effects on the crystallite growth behavior of LaPO4 nanopowders and its mechanical properties

The effects of pH of the reaction solution and the concentration of phosphoric acid on the crystal growth behavior of LaPO₄ crystallites were investigated and the mechanical properties of rare-earth phosphates were compared. As a result, the concentration of phosphoric acid of 10% was beneficial to the crystal growth of LaPO₄ nanocrystalline. When the pH value of the reaction solution was 2, the size of LaPO₄ crystallites increased gradually with the increasing reaction temperature, and the smallest crystallite size of 43.27 nm was obtained after heat-treatment at 1000 °C. Simultaneously, the activation energy for crystal growth of LaPO₄ nanocrystalline was relatively lower (26.82 kJ mol⁻¹). With the decreasing radii of rare-earth ions, the hardness, Young's modulus and fracture toughness of the bulk rare-earth phosphates exhibited a reduced tendency, resulted from the increase of porosity under the same preparation process.     

Graphitic-C3N4/ZnCr-layered double hydroxide 2D/2D nanosheet heterojunction: Mesoporous photocatalyst for advanced oxidation of azo dyes with in situ produced H2O2

In this study the constructional modification of Graphitic carbon nitride nanosheet (GCN-ns) has been made with the aid of ZnCr layered double hydroxide (ZC-LDH) in a unique 2D-2D structure to enhance its visible light absorption. Optical and morphological study presents successful incorporation of ZC-LDH on the surface of GCN-ns. Through adjusting of GCN-ns by ZC-LDH lower recombination rate of e^?/h⁺ pairs, longer lifetimes and an increase in contamination reduction was brought out. The binary nanocomposite was employed to effectively degrade Rhodamine B under UV/vis light irradiation. The improvement in photocatalytic abilities was proven to be related to in situ self-production of H₂O₂ on GCN-ns/ZC-LDH surface by Xe light irradiation which in return accounts for additional hydroxide radical generation. Radical quenching experiments specified the main active species involved while the consequent step-scheme (S-scheme) charge transfer mechanism was proposed.     

High-efficiency Silicon Solar Cells: A Review

Over the past few decades, crystalline silicon solar cells have been extensively studied due to their high efficiency, high reliability, and low cost. In addition, these types of cells lead the industry and account for more than half of the market. For the foreseeable future, Si will still be a critical material for photovoltaic devices in the solar cell industry. In this paper, we discuss key issues, cell concepts, and the status of recent high-efficiency crystalline silicon solar cells.     

Tuning the Dimensions of C60‐Based Needlelike Crystals in Blended Thin Films

A new ordered structure of the C₆₀ derivative PCBM ([6‐6]‐phenyl C₆₁‐butyric acid methyl ester) is obtained in thin films based on the blend PCBM:regioregular P3HT (poly(3‐hexylthiophene)). Rapid formation of needlelike crystalline PCBM structures of a few micrometers up to 100 μm in size is demonstrated by submitting the blended thin films to an appropriate thermal treatment. These structures can grow out to a 2D network of PCBM needles and, in specific cases, to spectacular PCBM fans. Key parameters to tune the dimensions and spatial distribution of the PCBM needles are blend ratio and annealing conditions. The as‐obtained blended films and crystals are probed using atomic force microscopy, transmission electron microscopy, selected area electron diffraction, optical microscopy, and confocal fluorescence microscopy. Based on the analytical results, the growth mechanism of the PCBM structures within the film is described in terms of diffusion of PCBM towards the PCBM crystals, leaving highly crystalline P3HT behind in the surrounding matrix.     

掺Nd纳米ZnO薄膜特性研究

研究了用真空蒸发法在玻璃衬底上制备稀土掺杂纳米ZnO薄膜结构、导电性及光透射性能。结果显示 ,在 5 0 0℃氧化、热处理稀土元素Nd掺杂后能够明显改善纳米ZnO薄膜的结构特性 ,薄膜的晶粒尺寸随掺杂含量的增加而减小。掺Nd使ZnO薄膜的电性能有所改善但使纳米ZnO薄膜的光透射性有所降低。     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

纳米技术在中药开发中的应用

本文综述了纳米科技与中药制剂相结合的发展，阐述了纳米中药的概念、特性，介绍了纳米中药的制备技术，另外探讨了收集纳米粒子的方法，最后，着重展望了纳米技术在中药制剂中广泛的应用前景。     

Lateral space-charge effects on ballistic electron transport across graded heterojunctions

Hot electron transport across graded compound semiconductor heterojunctions has been explored using a two-dimensional formulation of the self-consistent ensemble Monte Carlo method. The Al_xGa_1-xAs/GaAs heterojunction imbedded into a vertical field effect transistor with two ohmic contacts (source, drain) and two lateral Schottky gates has been used as an example. Lateral space charges modulated by the gates are shown to control ballistic injection of electrons over the heterojunction under steady state conditions. The transient response to a gate pulse is found to be determined by carrier transit from the heavily doped source contact region into the channel. A conceptual one-dimensional section model is used to explain the Monte Carlo results.