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1.
蒸发氧化法制备高品质活性氧化镉粉末   总被引:1,自引:1,他引:0  
杨立新  黄凯  郭学益 《矿冶工程》2003,23(5):63-65,69
开发了高品质活性氧化镉粉末的制备工艺,系统地探索了工艺条件对氧化镉电池材料电化性能的影响。对样品进行了物化性能及电性能检测,结果表明,采用蒸发氧化法可制备出镍镉充电电池用高品质活性氧化镉粉末。  相似文献   
2.
Non-aqueous electrodeposition of ZnO and CdO films   总被引:1,自引:0,他引:1  
R. Jayakrishnan  G. Hodes   《Thin solid films》2003,440(1-2):19-25
ZnO films were electrodeposited from a dimethylsulfoxide bath containing dissolved gaseous oxygen. Variations in deposition parameters and their effects on the structural (crystal size, growth direction), optical (bandgap variations, photoluminescence) and electrical (conductivity) properties are described. The technique was extended to give highly-conducting films of CdO.  相似文献   
3.
Hydrogenated (annealed in hydrogen atmosphere) cadmium oxide (CdO) thin films co-doped with iron (Fe) of different levels and fixed (2.5%) copper (Cu) amount were deposited on glass and silicon wafer substrates by thermal evaporation. The films were characterised with X-ray fluorescence, X-ray diffraction, optical spectroscopy, and dc-electrical measurements. The obtained results show important improvements in the conductivity, mobility, and carrier concentration compared to un-doped and non-hydrogenated CdO. Hydrogenated CdO doped with 2.5% Cu and 1.3% Fe improved the conductivity (2293.6 S/cm) by ~46 times, mobility (78.31 cm2/V s) by ~11 times, and carrier concentration (1.82×1020 cm−3) by ~4 times. This suggests the possibility of using CdO:Cu:Fe–H as transparent-conducting-oxide and dilute-magnetic-semiconductor field of applications.  相似文献   
4.
CdO nanonecklace like structure with interconnected nanobeads were produced by air annealed Cd(OH)2 nanowire structure thin film at 290 °C. Simple and low cost chemical route has been successfully employed for the synthesis of Cd(OH)2 nanowires on fluorine doped tin oxide (FTO) coated glass substrates at room temperature (27 °C). Structural analysis confirmed the conversion of hydroxide phase to the oxide phase by annealing which also leads to change in optical band gap from 3.5 to 2.34 eV. The necklace like nanostructure represent unique surface morphology which can be emerged as a potential candidate towards wide range of applications in different fields of nanotechnology such as solar cell, gas sensor, supercapacitor and photo-catalyst.  相似文献   
5.
Green fluorescent protein (GFP) molecules are attached to titanium dioxide and cadmium oxide nanoparticles via sol–gel method and fluorescence dynamics of such a protein–metal oxide assembly is investigated with a conventional time correlated single photon counting technique. As compared to free fluorescent protein molecules, time-resolved experiments show that the fluorescence lifetime of GFP molecules bound to these metal oxide nanoparticles gets shortened dramatically. Such a decrease in the lifetime is measured to be 22 and 43 percent for cadmium oxide and titanium dioxide respectively, which is due to photoinduced electron transfer mechanism caused by the interaction of GFP molecules (donor) and metal oxide nanoparticles (acceptor). Our results yield electron transfer rates of 3.139×108 s−1 and 1.182×108 s−1 from the GFP molecules to titanium dioxide and cadmium oxide nanoparticles, respectively. The electron transfer rates show a marked decrease with increasing driving force energy. This effect represents a clear example of the Marcus inverted region electron transfer process.  相似文献   
6.
Te-doped ZnO nanostructures were synthesized by an annealing (vapor–solid) process under ambient conditions, and characterized in terms of their morphological, structural, compositional and optical properties. The structural and morphological characterizations revealed that the synthesized nanostructures were well-defined multipods, needles and spherical particles, and possessed well-crystalline ZnO wurtzite hexagonal phase. Also, in the X-ray diffraction studies, the presence of a shift in the peak positions towards a lower angle, and a decrease in the intensity, with an increase in the Te concentration, as compared to the undoped ZnO, were observed. The chemical composition confirmed the presence of Te, in the case of multipod and needle morphologies. The effect of doping on the crystalline quality and optical properties was also investigated, by using photoluminescence (PL) and Raman spectrometers. The Raman results demonstrated that the doped ZnO nanostructures had a lower crystalline quality than the undoped ZnO. Moreover, the PL results showed a decrease in the band gap for the doped ZnO nanostructures, in comparison to the undoped ZnO. A possible growth mechanism was also proposed.  相似文献   
7.
Thin films of Fe and Cu-codoped CdO (CdO:Cu:Fe) with different Fe content and fixed Cu content were deposited in a high vacuum on glass and Si wafer substrates. These films were studied by X-ray fluorescence (XRF), X-ray diffraction (XED), optical spectroscopy, and dc-electrical measurements. The structural results show enhancement of film [1 1 1] orientation with Fe doping especially with 1.3%Fe film. Also, light doping with Fe improves the dc-conduction parameters of the CdO:Cu:Fe films so that the utmost enhancement of mobility (90.5 cm2/Vs) and conductivity (1470.6 S/cm) was found with 1.3 wt% Fe doping level. It was found that the variation in the bandgap is related to the variation in electron concentration that caused by Fe doping. For low Fe ion concentration (<1.3 wt% ), the bandgap varies according to the Moss–Burstein model.  相似文献   
8.
The effect of Zn dopant on the growth of cadmium oxide (CdO) nanostructures through a sonochemical method was investigated. The X-ray diffraction (XRD) patterns of the nanoparticles show CdO cubic structures for the produced samples. Field emission scanning electron microscope (FESEM) images reveal that morphologies of the samples change, when they are doped with Zn atoms, and their sizes reduce. Room temperature photoluminescence (PL) and UV-Vis spectrometers were used to study optical properties of the samples. Evaluation of optical properties indicates that different emission bands result from different transitions and the value of CdO energy band gap increases due to doping. Studies of electrical properties of the nanostructures demonstrate that Zn dopant enhances electrical conductivity and photocurrent generation as the result of light illumination on the nanostructures due to improved density of photo-generated carriers. Considering the obtained outcomes, Zn dopant can alter the physical property of the CdO nanostructures.  相似文献   
9.
《Ceramics International》2016,42(10):11822-11826
Nanostructured CdO films were prepared on glass substrates by a surfactant – sodium dodecyl sulfate (SDS) – assisted SILAR technique. The influence of SDS concentrations of the growth solution on the structural, morphological and optical properties of the films was investigated and discussed. From the metallurgical microscope and scanning electron microscope images, it was seen that the surface morphology of the films are significantly enhanced by SDS addition. XRD investigations confirmed that the films have good crystallinity levels and are grown preferentially in (111) and (200) orientations. UV–vis. spectroscopy investigations showed that the bandgap and transmittance values of the films are affected dramatically by SDS concentrations.  相似文献   
10.
Nanostructures of CdO thin films are prepared by chemical bath deposition (CBD) technique. The synthesized film is annealed in static air by using the hotplate at 373, 473, 573 and 673 K for 10 min. The effect of annealing temperature on structural, morphological, optical and electrical properties of CdO thin films has been investigated. The prepared thin films are characterised by X-ray diffraction (XRD), atomic force microscope (AFM), optical reflection microscope (ORM), UV–Visible Spectrophotometer and electrical resistivity. XRD shows the emergence of the cubic phase of CdO film in a preferred orientation (111) plane at 573 K. The AFM and ORM show that CdO films have smooth homogeneous surface in the formula with the emergence of nanoclusters gathering as nanoparticles with the average of grain size about 100 nm at 573 K. The optical properties prove that deposited films have high transparency within the visible range of the spectrum that reaches to more than 85% with a wide band gap that extends from 2.42 eV to 2.7 eV. The electrical properties of the CdO films show that resistivity decreases with increased annealing temperatures. In addition, it is proved that more than one activation energy appears and they change according to the temperature of annealing and this comes as a result of the polycrystalline structure. This study indicates that the properties of CdO thin films could be improved with annealing temperature and these films can be used in many technological applications.  相似文献   
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