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1.
The toughness of 31Mn2SiRE wear-resistance cast steel were increased by means of RE compound modification and high temperature austenitizing. The results show that the microstructures can be refined, needle and network ferrite are eliminated, the dislocation density and the quantity of dislocated martensite are increased remarkably, and the shape and distribution of inclusions are improved by the addition of RE. Therefore, the mechanical properties of the modified steel can be greatly increased, especially the toughness (αK) by 44%, yield strength (σs) by 10%, and elongation (δ5) by 42%. 相似文献
2.
John Bensted 《Cement and Concrete Composites》2003,25(8):873-877
Two main formation routes for thaumasite exist below 15 °C. One is the direct route from C–S–H reacting with appropriate carbonate, sulfate, Ca2+ ions and excess water. The other route is the woodfordite route from ettringite reacting with C–S–H, carbonate, Ca2+ ions and excess water, in which thaumasite arises through the intermediate formation of the solid solution woodfordite. The woodfordite route for thaumasite formation appears to be relatively quicker (although still slow) than the direct route, presumably because with the former the ettringite already has the octahedral [M(OH)6] units that can facilitate the critical change from [Al(OH)6]3− to [Si(OH)6]2− groupings. Both routes are mutually dependent on each other. The presence of magnesium salts can modify the path to thaumasite formation. High pressure might be able to stabilise [Si(OH)6]2− groupings and allow thaumasite to become formed above 15 °C. This possibility is discussed. 相似文献
3.
通过龙潭水电站对励磁装置可控硅元件实施过电压保护改进前后实际效果的分析,介绍了一种有效的过压保护方式. 相似文献
4.
Salvatore Lombardo Salvatore Ugo Campisano 《Materials Science and Engineering: R: Reports》1996,17(8):739-336
We have investigated the relationship between microstructure and electrical conductivity in semi-insulating polycrystalline silicon (SIPOS) with oxygen concentrations in the 2–35 at.% range and the effect of doping with boron, phosphorus, arsenic and erbium by ion implantation. SIPOS thin films are mixtures of silicon and silicon oxide phases. The chemical and morphological evolution of these phases upon annealing is emphasized. Electrical conductivity measurements are interpreted in terms of a physical model containing few free parameters related to the material microstructure. A direct extension of this model explains also the conductivity increase in SIPOS doped with elements of the third or the fifth group. In the last part of the paper, data of electroluminescence at 1.54 μm in Er-implanted SIPOS due to intra-4f transitions of the Er3+ ion are shown and discussed. 相似文献
5.
6.
硅光电负阻器件的构成原理与分类 总被引:1,自引:0,他引:1
郭维廉 《固体电子学研究与进展》2002,22(1):120-126
将三端负阻器件与硅光电探测器相结合 ,通过新的构思成功地提出并构成了一类新型光电器件——硅光电负阻器件。文中报道了该器件构成的一般性原理 ,以及依据此构成原理确定的分类方法 相似文献
7.
8.
Rotating-bending uniaxial fatigue tests and micro-fatigue crack initiation tests were carried out using a permanent mold cast
(PMC) and semi-solid die cast (SDC) with Al−7%Si−0.35%Mg composition in order to examine the relationship between solidification
structures and fatigue behaviors. The crack length was measured using a replication method. Fatigue strength was improved
in SDC, which was almost consistent with the predicted fatigue strength using the size of Si particle cluster. Resistance
to fatigue crack initiation and fatigue strength were improved in SDC owing to the finer Si cluster and to higher ultimate
tensile strength. Fatigue crack in PMC was preferentially initiated at pores. For SDC, the fatigue crack was initiated at
the Si particle/matrix interface, and then sucessively grew along eutectic cell boundaries. 相似文献
9.
介绍了钻孔灌注桩成孔质量的影响因素 ,详细叙述了钢筋笼的制作和吊放处理步骤 ,阐述了断桩发生的原因 ,提出了具体的防治措施 ,经实践效果良好 相似文献
10.
The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, EL, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si–H vibration mode at 2000 decreases faster than the one at 2100 cm−1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2–0.3 eV compared to the amorphous starting materials. 相似文献